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Register a new userRole of microstructure in porous silicon gas sensors for NO$_2$
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Electrical conductivity of porous silicon fabricated form heavily doped p-type silicon is very sensitive to NO$_2$, even at concentrations below 100 ppb. However, sensitivity strongly depends on the porous microstructure. The structural difference between sensitive and insensitive samples is independently confirmed by microscopy images and by light scattering behavior. A way to change the structure is by modifying the composition of the electrochemical solution. We have found that best results are achieved using ethanoic solutions with HF concentration levels between 13% and 15%.
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Porous materials provide a large surface to volume ratio, thereby providing a knob to alter fundamental properties in unprecedented ways. In thermal transport, porous nanomaterials can reduce thermal conductivity by not only enhancing phonon scattering from the boundaries of the pores and therefore decreasing the phonon mean free path, but also by reducing the phonon group velocity. Here we establish a structure-property relationship by measuring the porosity and thermal conductivity of individual electrolessly etched single crystalline silicon nanowires using a novel electron beam heating technique. Such porous silicon nanowires exhibit extremely low diffusive thermal conductivity (as low as 0.33 Wm-1K-1 at 300K for 43% porosity), even lower than that of amorphous silicon. The origin of such ultralow thermal conductivity is understood as a reduction in the phonon group velocity, experimentally verified by measuring the Young modulus, as well as the smallest structural size ever reported in crystalline Silicon (less than 5nm). Molecular dynamics simulations support the observation of a drastic reduction in thermal conductivity of silicon nanowires as a function of porosity. Such porous materials provide an intriguing platform to tune phonon transport, which can be useful in the design of functional materials towards electronics and nano-electromechanical systems.
We report on the crystal and magnetic structures, magnetic, and transport properties of SrMnSb$_2$ single crystals grown by the self-flux method. Magnetic susceptibility measurements reveal an antiferromagnetic (AFM) transition at $T_{rm N} = 295(3)$ K. Above $T_{rm N}$, the susceptibility slightly increases and forms a broad peak at $T sim 420$ K, which is a typical feature of two-dimensional magnetic systems. Neutron diffraction measurements on single crystals confirm the previously reported C-type AFM structure below $T_{rm N}$. Both de Haas-van Alphen (dHvA) and Shubnikov-de Haas (SdH) effects are observed in SrMnSb$_2$ single crystals. Analysis of the oscillatory component by a Fourier transform shows that the prominent frequencies obtained by the two different techniques are practically the same within error regardless of sample size or saturated magnetic moment. Transmission electron microscopy (TEM) reveals the existence of stacking faults in the crystals, which result from a horizontal shift of Sb atomic layers suggesting possible ordering of Sb vacancies in the crystals. Increase of temperature in susceptibility measurements leads to the formation of a strong peak at $T sim {570}$ K that upon cooling under magnetic field the susceptibility shows a ferromagnetic transition at $T_{rm C} sim 580$ K. Neutron powder diffraction on crushed single-crystals does not support an FM phase above $T_{rm N}$. Furthermore, X-ray magnetic circular dichroism (XMCD) measurements of a single crystal at the $L_{2,3}$ edge of Mn shows a signal due to induced canting of AFM moments by the applied magnetic field. All evidence strongly suggests that a chemical transformation at the surface of single crystals occurs above 500 K concurrently producing a minute amount of ferromagnetic impurity phase.
Todays supercapacitor energy storages are typically discrete devices aimed for printed boards and power applications. The development of autonomous sensor networks and wearable electronics and the miniaturisation of mobile devices would benefit substantially from solutions in which the energy storage is integrated with the active device. Nanostructures based on porous silicon (PS) provide a route towards integration due to the very high inherent surface area to volume ratio and compatibility with microelectronics fabrication processes. Unfortunately, pristine PS has limited wettability and poor chemical stability in electrolytes and the high resistance of the PS matrix severely limits the power efficiency. In this work, we demonstrate that excellent wettability and electro-chemical properties in aqueous and organic electrolytes can be obtained by coating the PS matrix with an ultra-thin layer of titanium nitride by atomic layer deposition. Our approach leads to very high specific capacitance (15 F/cm$^3$), energy density (1.3 mWh/cm$^3$), power density (up to 214 W/cm$^3$) and excellent stability (more than 13,000 cycles). Furthermore, we show that the PS-TiN nanomaterial can be integrated inside a silicon chip monolithically by combining MEMS and nanofabrication techniques. This leads to realisation of in-chip supercapacitor, i.e., it opens a new way to exploit the otherwise inactive volume of a silicon chip to store energy.
We study the nucleation dynamics of a model solid state transformation and the criterion for microstructure selection using a molecular dynamics (MD) simulation. Our simulations show a range of microstructures depending on the depth of quench. We closely follow the dynamics of the solid and find that transient {em non-affine zones} (NAZ) are created at and evolve with the rapidly moving transformation front. The dynamics of these plastic regions determines the selection of microstructure. We formulate an {it elastoplastic model} which couples the elastic strain to the non-affine deformation, and recover all the qualitative features of the MD simulation. Using this model, we construct a dynamical phase diagram for microstructure selection, in addition to making definite testable predictions.
Isothermal Close Space Sublimation (ICSS) technique was used for embedding porous silicon (PS) films with ZnTe. It was studied the influence of the preparation conditions and in particular of a chemical etching step before the ZnTe growth, on the composition profile and final porosity of ZnTe embedded PS. The structure of the embedded material was determined by x-ray diffraction analysis while the thickness of the samples was determined by scanning electron microscopy (SEM). Rutherford backscattering (RBS) and Energy Dispersive (EDS) spectrometries allowed determining the composition profiles. We conclude that the etching of the PS surface before the ZnTe growth has two main effects: the increase of the porosity and enhancing the reactivity of the inner surface. It was observed that both effects benefit the filling process of the pores. Since RBS and EDS cannot detect the porosity in the present system, we explore the evolution of porosity by the fitting of the UV-VIS reflectance spectra. The atomic percent determined with this method was in relatively good agreement with that obtained from the RBS and EDS measurements.
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