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Register a new userElectrical Switching of Magnetization in Films of alpha-Iron with Naturally Hydroxidized Surface
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Nikolay Polushkin Nikolay Polushkin
Publication date
2016
fields
Physics
and research's language is
English
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Control of the magnetization vector in ferromagnetic films and heterostructures by using electric tools instead of external magnetic fields can lead to low-power memory devices. We observe the robust changes in magnetization states of a thin (about 30 nm) film of alpha-Fe covered by the naturally formed layer ( about 6 nm in thickness) of iron ohyhydroxides (FeOOH) under discharging a capacitor through the film. Strikingly, the magnetization vector is switchable by the discharge even with no any biasing field at room temperatures. In this electrically induced magnetization switching (EIMS) we reveal the key role of the FeOOH layer. We demonstrate experimental evidences that not the discharge current itself but the electric field (of the order of 10 kV/m) generated by this current is responsible for EIMS. The results reported here provide a plausible explanation of the observed phenomenon in terms of electric-field-induced weak ferromagnetism in the FeOOH layer and its coupling with the underlying alpha-Fe.
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Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current is introduced to tune the magnitude of effective damping-like and field-like torques and further to electrically control magnetization switching. Symmetrical and asymmetrical control over the critical switching current by the bias current with opposite polarities is both realized in Pt/Co/MgO and $alpha$-Ta/CoFeB/MgO systems, respectively. This research not only identifies the influences of field-like and damping-like torques on switching process but also demonstrates an electrical method to control it.
A magnetic vortex is a curling magnetic structure realized in a ferromagnetic disk, which is a promising candidate of a memory cell for future nonvolatile data storage devices. Thus, understanding of the stability and dynamical behaviour of the magnetic vortex is a major requirement for developing magnetic data storage technology. Since the experimental proof of the existence of a nanometre-scale core with out-of-plane magnetisation in the magnetic vortex, the dynamics of a vortex has been investigated intensively. However, the way to electrically control the core magnetisation, which is a key for constructing a vortex core memory, has been lacking. Here, we demonstrate the electrical switching of the core magnetisation by utilizing the current-driven resonant dynamics of the vortex; the core switching is triggered by a strong dynamic field which is produced locally by a rotational core motion at a high speed of several hundred m/s. Efficient switching of the vortex core without magnetic field application is achieved thanks to resonance. This opens up the potentiality of a simple magnetic disk as a building block for spintronic devices like a memory cell where the bit data is stored as the direction of the nanometre-scale core magnetisation.
Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) bilayers via the spin Hall effect in the HM and/or the Rashba effect at the interfaces provides an efficient way to switch the magnetization. In the meantime, current induced SOT has also been used to switch the in-plane magnetization in single layers such as ferromagnetic semiconductor (Ga,Mn)As and antiferromagnetic metal CuMnAs with globally or locally broken inversion symmetry. Here we demonstrate the current induced perpendicular magnetization switching in L10 FePt single layer. The current induced spin-orbit effective fields in L10 FePt increase with the chemical ordering parameter (S). In 20 nm FePt films with high S, we observe a large charge-to-spin conversion efficiency and a switching current density as low as 7.0E6 A/cm2. We anticipate our findings may stimulate the exploration of the spin-orbit torques in bulk perpendicular magnetic anisotropic materials and the application of high-efficient perpendicular magnetization switching in single FM layer.
Yttrium Iron Garnet (YIG) and bismuth (Bi) substituted YIG (Bi0.1Y2.9Fe5O12, BYG) films are grown in-situ on single crystalline Gadolinium Gallium Garnet (GGG) substrates [with (100) and (111) orientations] using pulsed laser deposition (PLD) technique. As the orientation of the Bi-YIG film changes from (100) to (111), the lattice constant is enhanced from 12.384 {AA} to 12.401 {AA} due to orientation dependent distribution of Bi3+ ions at dodecahedral sites in the lattice cell. Atomic force microscopy (AFM) images show smooth film surfaces with roughness 0.308 nm in Bi-YIG (111). The change in substrate orientation leads to the modification of Gilbert damping which, in turn, gives rise to the enhancement of ferromagnetic resonance (FMR) line width. The best values of Gilbert damping are found to be (0.54)*10-4, for YIG (100) and (6.27)*10-4, for Bi-YIG (111) oriented films. Angle variation measurements of the Hr are also performed, that shows a four-fold symmetry for the resonance field in the (100) grown film. In addition, the value of effective magnetization (4{pi}Meff) and extrinsic linewidth ({Delta}H0) are observed to be dependent on substrate orientation. Hence PLD growth can assist single-crystalline YIG and BYG films with a perfect interface that can be used for spintronics and related device applications.
The protected surface conductivity of topological insulators, carried by ultra-relativistic Dirac fermions, is in high demand for the next generation of electronic devices. Progress in the unambiguous identification of this surface contribution and, in a second step, its control are needed to move forward. Here we demonstrate both, with a combined transport and spectroscopy study of high-quality single crystals and mesoscopic devices of the topological insulator TlBiSe2. We show how various external stimuli-from thermal radiation, via low-intensity light, to high-intensity laser pumping and current driving-can boost the surface contribution, thereby making it both unambiguously detectable and potentially exploitable for applications. Once switched on, the extra surface contribution is persistent, with lifetimes of hundreds of years at low temperatures. We understand this effect in terms of the well-known concept of surface charge accumulation via a Schottky barrier formation, and propose that the same mechanism underlies also the slow relaxations seen with spectroscopic probes in our and other materials, which might thus also be persistent. We expect our technique to be readily transferable to other materials and probes, thereby shedding light on unexplained slow relaxations in transport and beyond.
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