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Register a new userPhonon-mediated mid-infrared photoresponse of graphene
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The photoresponse of graphene at mid-infrared frequencies is of high technological interest and is governed by fundamentally different underlying physics than the photoresponse at visible frequencies, as the energy of the photons and substrate phonons involved have comparable energies. Here we perform a spectrally resolved study of the graphene photoresponse for mid-infrared light by measuring spatially resolved photocurrent over a broad frequency range (1000-1600 cm$^{-1}$). We unveil the different mechanisms that give rise to photocurrent generation in graphene on a polar substrate. In particular, we find an enhancement of the photoresponse when the light excites bulk or surface phonons of the SiO$_2$ substrate. This work paves the way for the development of graphene-based mid-infrared thermal sensing technology.
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The possibility of superconducting pairing of electrons in doped graphene due to in-plane and out-of-plane phonons is studied. Quadratic coupling of electrons with out-of-plane phonons is considered in details, taking into account both deformation potential and bond-stretch contributions. The order parameter of electron-electron pairing can have different structures due to four-component spinor character of electrons wave function. We consider s-wave pairing, diagonal on conduction and valence bands, but having arbitrary structure with respect to valley degree of freedom. The sign and magnitude of contribution of each phonon mode to effective electron-electron interaction turns out to depend on both the symmetry of phonon mode and the structure of the order parameter. Unconventional orbital-spin symmetry of the order parameter is found.
The decay dynamics of excited carriers in graphene have attracted wide scientific attention, as the gapless Dirac electronic band structure opens up relaxation channels that are not allowed in conventional materials. We report Fermi-level-dependent mid-infrared emission in graphene originating from a previously unobserved decay channel: hot plasmons generated from optically excited carriers. The observed Fermi-level dependence rules out Planckian light emission mechanisms and is consistent with the calculated plasmon emission spectra in photoinverted graphene. Evidence for bright hot plasmon emission is further supported by Fermi-level-dependent and polarization-dependent resonant emission from graphene plasmonic nanoribbon arrays under pulsed laser excitation. Spontaneous plasmon emission is a bright emission process as our calculations for our experimental conditions indicate that the spectral flux of spontaneously generated plasmons is several orders of magnitude higher than blackbody emission at a temperature of several thousand Kelvin. In this work, it is shown that a large enhancement in radiation efficiency of graphene plasmons can be achieved by decorating graphene surface with gold nanodisks, which serve as out-coupling scatterers and promote localized plasmon excitation when they are resonant with the incoming excitation light. These observations set a framework for exploration of ultrafast and ultrabright mid-infrared emission processes and light sources.
Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence on orientation is radically different than previously expected, and far more favorable for device applications. At low temperatures, we predict diode-like current-voltage characteristics due to a phonon bottleneck. Simple scaling relationships give a good description of the conductance as a function of temperature, doping, rotation angle, and bias voltage, reflecting the dominant role of the interlayer beating phonon mode.
A principal motivation to develop graphene for future devices has been its promise for quantum spintronics. Hyperfine and spin-orbit interactions are expected to be negligible in single-layer graphene. Spin transport experiments, on the other hand, show that graphenes spin relaxation is orders of magnitude faster than predicted. We present a quantum interference measurement that disentangles sources of magnetic and non-magnetic decoherence in graphene. Magnetic defects are shown to be the primary cause of spin relaxation, while spin-orbit interaction is undetectably small.
We report on spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide, or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with the universal optical conductivity (due to interband transitions), and the wavelength at which Pauli blocking occurs due to band filling. From these the graphene layer number, doping level, sheet resistivity, carrier mobility, and scattering rate can be inferred. The mid-IR absorption of epitaxial two-layer graphene shows a less pronounced peak at 0.37pm0.02 eV compared to that in exfoliated bilayer graphene. In heavily chemically-doped single layer graphene, a record high transmission reduction due to free carriers approaching 40% at 250 mum (40 cm-1) is measured in this atomically thin material, supporting the great potential of graphene in far-infrared and terahertz optoelectronics.
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