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Register a new userPhonon mediated interlayer conductance in twisted graphene bilayers
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Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence on orientation is radically different than previously expected, and far more favorable for device applications. At low temperatures, we predict diode-like current-voltage characteristics due to a phonon bottleneck. Simple scaling relationships give a good description of the conductance as a function of temperature, doping, rotation angle, and bias voltage, reflecting the dominant role of the interlayer beating phonon mode.
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The possibility of superconducting pairing of electrons in doped graphene due to in-plane and out-of-plane phonons is studied. Quadratic coupling of electrons with out-of-plane phonons is considered in details, taking into account both deformation potential and bond-stretch contributions. The order parameter of electron-electron pairing can have different structures due to four-component spinor character of electrons wave function. We consider s-wave pairing, diagonal on conduction and valence bands, but having arbitrary structure with respect to valley degree of freedom. The sign and magnitude of contribution of each phonon mode to effective electron-electron interaction turns out to depend on both the symmetry of phonon mode and the structure of the order parameter. Unconventional orbital-spin symmetry of the order parameter is found.
Transport through a single molecular conductor is considered, showing negative differential conductance behavior associated with phonon-mediated electron tunneling processes. This theoretical work is motivated by a recent experiment by Leroy et al. using a carbon nanotube contacted by an STM tip [Nature {bf 432}, 371 (2004)], where negative differential conductance of the breathing mode phonon side peaks could be observed. A peculiarity of this system is that the tunneling couplings which inject electrons and those which collect them on the substrate are highly asymmetrical. A quantum dot model is used, coupling a single electronic level to a local phonon, forming polaron levels. A half-shuttle mechanism is also introduced. A quantum kinetic formulation allows to derive rate equations. Assuming asymmetric tunneling rates, and in the absence of the half-shuttle coupling, negative differential conductance is obtained for a wide range of parameters. A detailed explanation of this phenomenon is provided, showing that NDC is maximal for intermediate electron-phonon coupling. In addition, in absence of a gate, the floating level results in two distinct lengths for the current plateaus, related to the capacitive couplings at the two junctions. It is shown that the half-shuttle mechanism tends to reinforce the negative differential regions, but it cannot trigger this behavior on its own.
We present a theory of phonon-mediated superconductivity in near magic angle twisted bilayer graphene. Using a microscopic model for phonon coupling to moire band electrons, we find that phonons generate attractive interactions in both $s$ and $d$ wave pairing channels and that the attraction is strong enough to explain the experimental superconducting transition temperatures. Before including Coulomb repulsion, the $s$-wave channel is more favorable; however, on-site Coulomb repulsion can suppress $s$-wave pairing relative to $d$-wave. The pair amplitude varies spatially with the moire period, and is identical in the two layers in the $s$-wave channel but phase shifted by $pi$ in the $d$-wave channel. We discuss experiments that can distinguish the two pairing states.
The photoresponse of graphene at mid-infrared frequencies is of high technological interest and is governed by fundamentally different underlying physics than the photoresponse at visible frequencies, as the energy of the photons and substrate phonons involved have comparable energies. Here we perform a spectrally resolved study of the graphene photoresponse for mid-infrared light by measuring spatially resolved photocurrent over a broad frequency range (1000-1600 cm$^{-1}$). We unveil the different mechanisms that give rise to photocurrent generation in graphene on a polar substrate. In particular, we find an enhancement of the photoresponse when the light excites bulk or surface phonons of the SiO$_2$ substrate. This work paves the way for the development of graphene-based mid-infrared thermal sensing technology.
Recent experiments on twisted bilayer graphene (tBG) close to magic angle show that a small relative rotation in a van der Waals heterostructure greatly alters its electronic properties. We consider various scattering mechanisms and show that the carrier transport in tBG is dominated by a combination of charged impurities and acoustic gauge phonons. Charged impurities still dominate at low temperature and densities because of the inability of Dirac fermions to screen long-range Coulomb potentials at charge neutrality; however, the gauge phonons dominate for most of the experimental regime because although they couple to current, they do not induce charge and are therefore unscreened by the large density of states close to magic angle. We show that the resistivity has a strong monotonically decreasing carrier density dependence at low temperature due to charged impurity scattering, and weak density dependence at high temperature due to gauge phonons. Away from charge neutrality, the resistivity increases with temperature, while it does the opposite close to the Dirac point. A non-monotonic temperature dependence observed only at low temperature and carrier density is a signature of our theory that can be tested in experimentally available samples.
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