Do you want to publish a course? Click here

Carbon-atom wires produced by nanosecond pulsed laser deposition in a background gas

62   0   0.0 ( 0 )
 Publication date 2016
  fields Physics
and research's language is English




Ask ChatGPT about the research

Wires of sp-hybridized carbon atoms are attracting interest for both fundamental aspects of carbon science and for their appealing functional properties. The synthesis by physical vapor deposition has been reported to provide sp-rich carbon films but still needs to be further developed and understood in detail. Here the synthesis of carbon-atom wires (CAWs) has been achieved by nanosecond pulsed laser deposition (PLD) expoliting the strong out-of-equilibrium conditions occurring when the ablation plasma is confined in a background gas. Surface Enhnaced Raman scattering (SERS) spectra of deposited films indicates that CAWs are mixed with a mainly $sp^2$ amorphous carbon in a $sp-sp^2$ hybrid material. Optimal conditions for the deposition of sp-carbon phase have been investigated by changing deposition parameters thus suggesting basic mechanisms of carbon wires formation. Our proof-of-concept may open new perspectives for the targeted fabrication of CAWs and $sp-sp^2$ structures.



rate research

Read More

Micron-thick boron films have been deposited by Pulsed Laser Deposition in vacuum on several substrates at room temperature. The use of high energy pulses (>700 mJ) results in the deposition of smooth coatings with low oxygen uptake even at base pressures of 10$^{-4}$ - 10$^{-3}$ Pa. A detailed structural analysis, by X-Ray Diffraction and Raman, allowed to assess the amorphous nature of the deposited films as well as to determine the base pressure that prevents boron oxide formation. In addition the crystallization dynamics has been characterized showing that film crystallinity already improves at relatively low temperatures (800 {deg}C). Elastic properties of the boron films have been determined by Brillouin spectroscopy. Finally, micro-hardness tests have been used to explore cohesion and hardness of B films deposited on aluminum, silicon and alumina. The reported deposition strategy allows the growth of reliable boron coatings paving the way for their use in many technology fields.
84 - A. Heinrich , B. Renner , R. Lux 2003
Cu2Ta4O12 (CTaO) thin films were successfully deposited on Si(100) substrates by pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CTaO thin films were strongly affected by substrate temperature, oxygen pressure and target - substrate distance. In general during deposition of CTaO the formation of a Ta2O5 phase appeared, on which CTaO grew with different orientations. We report on the experimental set-up, details for film deposition and the film properties determined by SEM, EDX and XRD.
High quality Van der Waals chalcogenides are important for phase change data storage, thermoelectrics, and spintronics. Using a combination of statistical design of experiments and density functional theory, we clarify how the out-of-equilibrium van der Waals epitaxial deposition methods can improve the crystal quality of Sb2Te3 films. We compare films grown by radio frequency sputtering and pulsed laser deposition (PLD). The growth factors that influence the crystal quality for each method are different. For PLD grown films a thin amorphous Sb2Te3 seed layer most significantly influences the crystal quality. In contrast, the crystalline quality of films grown by sputtering is rather sensitive to the deposition temperature and less affected by the presence of a seed layer. This difference is somewhat surprising as both methods are out-of-thermal-equilibrium plasma-based methods. Non-adiabatic quantum molecular dynamics simulations show that this difference originates from the density of excited atoms in the plasma. The PLD plasma is more intense and with higher energy than that used in sputtering, and this increases the electronic temperature of the deposited atoms, which concomitantly increases the adatom diffusion lengths in PLD. In contrast, the adatom diffusivity is dominated by the thermal temperature for sputter grown films. These results explain the wide range of Sb2Te3 and superlattice crystal qualities observed in the literature. These results indicate that, contrary to popular belief, plasma-based deposition methods are suitable for growing high quality crystalline chalcogenides.
129 - B. Vishal , H. Sharona , U. Bhat 2018
We present results on growth of large area epitaxial ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001) ReS2 perpendicular to (0001) Al2O3 and (0001) ReS2 perpendicular to (0001) MoS2 parallel to (0001) Al2O3 at deposition temperature below 300 deg C. Films are polycrystalline grown at temperature above 300 deg C. The smoothness and quality of the films are significantly improved when grown on MoS2 template compared to sapphire substrate. The results show that PLD is suitable to grow ReS2 epitaxial thin film over large area for practical device application.
To visualize the topography of thin oxide films during growth, thereby enabling to study its growth behavior quasi real-time, we have designed and integrated an atomic force microscope (AFM) in a pulsed laser deposition (PLD) vacuum setup. The AFM scanner and PLD target are integrated in a single support frame, combined with a fast sample transfer method, such that in-situ microscopy can be utilized after subsequent deposition pulses. The in-situ microscope can be operated from room temperature (RT) up to 700$^circ$C and at (process) pressures ranging from the vacuum base pressure of 10$^{-6}$ mbar up to 1 mbar, typical PLD conditions for the growth of oxide films. The performance of this instrument is demonstrated by resolving unit cell height surface steps and surface topography under typical oxide PLD growth conditions.
comments
Fetching comments Fetching comments
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا