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Register a new userDeposition of Cu2Ta4O12 by pulsed laser deposition
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Cu2Ta4O12 (CTaO) thin films were successfully deposited on Si(100) substrates by pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CTaO thin films were strongly affected by substrate temperature, oxygen pressure and target - substrate distance. In general during deposition of CTaO the formation of a Ta2O5 phase appeared, on which CTaO grew with different orientations. We report on the experimental set-up, details for film deposition and the film properties determined by SEM, EDX and XRD.
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Micron-thick boron films have been deposited by Pulsed Laser Deposition in vacuum on several substrates at room temperature. The use of high energy pulses (>700 mJ) results in the deposition of smooth coatings with low oxygen uptake even at base pressures of 10$^{-4}$ - 10$^{-3}$ Pa. A detailed structural analysis, by X-Ray Diffraction and Raman, allowed to assess the amorphous nature of the deposited films as well as to determine the base pressure that prevents boron oxide formation. In addition the crystallization dynamics has been characterized showing that film crystallinity already improves at relatively low temperatures (800 {deg}C). Elastic properties of the boron films have been determined by Brillouin spectroscopy. Finally, micro-hardness tests have been used to explore cohesion and hardness of B films deposited on aluminum, silicon and alumina. The reported deposition strategy allows the growth of reliable boron coatings paving the way for their use in many technology fields.
We present results on growth of large area epitaxial ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001) ReS2 perpendicular to (0001) Al2O3 and (0001) ReS2 perpendicular to (0001) MoS2 parallel to (0001) Al2O3 at deposition temperature below 300 deg C. Films are polycrystalline grown at temperature above 300 deg C. The smoothness and quality of the films are significantly improved when grown on MoS2 template compared to sapphire substrate. The results show that PLD is suitable to grow ReS2 epitaxial thin film over large area for practical device application.
High quality Van der Waals chalcogenides are important for phase change data storage, thermoelectrics, and spintronics. Using a combination of statistical design of experiments and density functional theory, we clarify how the out-of-equilibrium van der Waals epitaxial deposition methods can improve the crystal quality of Sb2Te3 films. We compare films grown by radio frequency sputtering and pulsed laser deposition (PLD). The growth factors that influence the crystal quality for each method are different. For PLD grown films a thin amorphous Sb2Te3 seed layer most significantly influences the crystal quality. In contrast, the crystalline quality of films grown by sputtering is rather sensitive to the deposition temperature and less affected by the presence of a seed layer. This difference is somewhat surprising as both methods are out-of-thermal-equilibrium plasma-based methods. Non-adiabatic quantum molecular dynamics simulations show that this difference originates from the density of excited atoms in the plasma. The PLD plasma is more intense and with higher energy than that used in sputtering, and this increases the electronic temperature of the deposited atoms, which concomitantly increases the adatom diffusion lengths in PLD. In contrast, the adatom diffusivity is dominated by the thermal temperature for sputter grown films. These results explain the wide range of Sb2Te3 and superlattice crystal qualities observed in the literature. These results indicate that, contrary to popular belief, plasma-based deposition methods are suitable for growing high quality crystalline chalcogenides.
Here we systematically explore the use of pulsed laser deposition technique (PLD) to grow three basic oxides that have rocksalt structure but different chemical stability in the ambient atmosphere: NiO (stable), MnO (metastable) and EuO (unstable). By tuning laser fluence, an epitaxial single-phase nickel oxide thin-film growth can be achieved in a wide range of temperatures from 10 to 750 {deg}C. At the lowest growth temperature, the out-of-plane strain raises to 1.5%, which is five times bigger than that in a NiO film grown at 750 {deg}C. MnO thin films that had long-range ordered were successfully deposited on the MgO substrates after appropriate tuning of deposition parameters. The growth of MnO phase was strongly influenced by substrate temperature and laser fluence. EuO films with satisfactory quality were deposited by PLD after oxygen availability had been minimized. Synthesis of EuO thin films at rather low growth temperature prevented thermally-driven lattice relaxation and allowed growth of strained films. Overall, PLD was a quick and reliable method to grow binary oxides with rocksalt structure in high quality that can satisfy requirements for applications and for basic research.
Epitaxial titanium diboride thin films have been deposited on sapphire substrates by Pulsed Laser Ablation technique. Structural properties of the films have been studied during the growth by Reflection High Energy Electron Diffraction (RHEED) and ex-situ by means of X-ray diffraction techniques; both kinds of measurements indicate a good crystallographic orientation of the TiB2 film both in plane and along the c axis. A flat surface has been observed by Atomic Force Microscopy imaging. Electrical resistivity at room temperature resulted to be five times higher than the value reported for single crystals. The films resulted to be also very stable at high temperature, which is very promising for using this material as a buffer layer in the growth of magnesium diboride thin films.
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