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Register a new userSensing Single Molecules with Carbon-Boron-Nitride Nanotubes
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We investigate the molecular sensing properties of carbon nanotube-boron nitride-carbon nanotube (CNT-BN-CNT) junctions. We demonstrate that the electrical conductance of such a junction changes in response to the binding of an analyte molecule to the region of BN. The change in conductance depends on the length of the BN spacer and the position of the analyte and therefore we propose a method of statistically analysing conductance data. We demonstrate the ability to discriminate between analytes, by computing the conductance changes due to three analytes (benzene, thiol-capped oligoyne and a pyridyl-capped oligoyne) binding to junctions with five different lengths of BN spacer.
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There is a strong interest to attach nanoparticles non-covalently to one-dimensional systems like boron nitride nanotubes to form composites. The combination of those materials might be used for catalysis, in solar cells, or for water splitting. Additionally, the fundamental aspect of charge transfer between the components can be studied in such systems. We report on the synthesis and characterization of nanocomposites based on semiconductor nanoparticles attached directly and non-covalently to boron nitride nanotubes. Boron nitride nanotubes were simply integrated into the colloidal synthesis of the corresponding nanoparticles. With PbSe, CdSe, and ZnO nanoparticles a wide range of semiconductor bandgaps from the near infrared to the ultra violet range was covered. A high surface coverage of the boron nitride nanotubes with these semiconducting nanoparticles was achieved, while it was found that a similar in-situ approach with metallic nanoparticles does not lead to proper attachment. In addition, possible models for the underlying attachment mechanisms of all investigated nanoparticles are presented. To emphasize the new possibilities that boron nitride nanotubes offer as a support material for semiconductor nanoparticles we investigated the fluorescence of BN-CdSe composites. In contrast to CdSe nanoparticles attached to carbon nanotubes, where the fluorescence is quenched, particles attached to boron nitride nanotubes remain fluorescent. With our versatile approaches we expand the library of BN-nanoparticle composites that present an interesting, electronically non-interacting complement to the widely applied carbon nanotube-nanoparticle composite materials.
Using density functional theory, we study physical properties of boron nitride nanotubes (BNNTs) with the substitutional carbon pair defect. We also consider the Stone-Wales (SW) rearrangement of the C-C pair defect in the BNNT. The formation energy of an SW defect of the carbon dimer is approximately 3.1 eV lower than that of the SW-transformed B-N pair in the undoped BNNT. The activation energies show that the SW defect in the C-doped BNNT may be experimentally observed with a higher probability than in the undoped BNNT. Finally, we discuss the localized states originating from the carbon pair impurities.
We show that carbon-doped hexagonal boron nitride (h-BN) has extraordinary properties with many possible applications. We demonstrate that the substitution-induced impurity states, associated with carbon atoms, and their interactions dictate the electronic structure and properties of C-doped h-BN. Furthermore, we show that stacking of localized impurity states in small C clusters embedded in h-BN forms a set of discrete energy levels in the wide gap of h-BN. The electronic structures of these C clusters have a plethora of applications in optics, magneto-optics, and opto-electronics.
We report the fabrication details and low-temperature characteristics of the first carbon nanotube (CNT) quantum dots on flakes of hexagonal boron nitride (hBN) as substrate. We demonstrate that CNTs can be grown on hBN by standard chemical vapor deposition and that standard scanning electron microscopy imaging and lithography can be employed to fabricate nanoelectronic structures when using optimized parameters. This proof of concept paves the way to more complex devices on hBN, with more predictable and reproducible characteristics and electronic stability.
Single- and multi-walled molybdenum disulfide (MoS$_2$) nanotubes have been coaxially grown on small diameter boron nitride nanotubes (BNNTs) which were synthesized from heteronanotubes by removing single-walled carbon nanotubes (SWCNTs), and systematically investigated by optical spectroscopy. The strong photoluminescence (PL) from single-walled MoS$_2$ nanotubes supported by core BNNTs is observed in this work, which evidences a direct band gap structure for single-walled MoS$_2$ nanotubes with around 6 - 7 nm in diameter. The observation is consistent with our DFT results that the single-walled MoS$_2$ nanotube changes from an indirect-gap to a direct-gap semiconductor when the diameter of a nanotube is more than around 5 nm. On the other hand, when there are SWCNTs inside the heteronanotubes of BNNTs and MoS$_2$ nanotubes, the PL signal is considerably quenched. The charge transfer and energy transfer between SWCNTs and single-walled MoS$_2$ nanotubes were examined through characterizations by PL, XPS, and Raman spectroscopy. Unlike the single-walled MoS$_2$ nanotubes, multi-walled MoS$_2$ nanotubes do not emit light. Single- and multi-walled MoS$_2$ nanotubes exhibit different Raman features in both resonant and non-resonant Raman spectra. The method of assembling heteronanotubes using BNNTs as templates provides an efficient approach for exploring the electronic and optical properties of other transition metal dichalcogenide nanotubes.
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