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Register a new userMagnetic proximity effect at interface between a cuprate superconductor and an oxide spin valve
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Added by
Gennady Ovsyannikov A.
Publication date
2015
fields
Physics
and research's language is
English
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Heterostructures consisting of a cuprate superconductor YBa2Cu3O7x and a ruthenate/manganite (SrRuO3/La0.7Sr0.3MnO3) spin valve have been studied by SQUID magnetometry, ferromagnetic resonances and neutron reflectometry. It was shown that due to the influence of magnetic proximity effect a magnetic moment is induced in the superconducting part of heterostructure and at the same time the magnetic moment is suppressed in the ferromagnetic spin valve. The experimental value of magnetization induced in the superconductor has the same order of magnitude with the calculations based on the induced magnetic moment of Cu atoms due to orbital reconstruction at the superconductor-ferromagnetic interface. It corresponds also to the model that takes into account the change in the density of states at a distance of order of the coherence length in the superconductor. The experimentally obtained characteristic length of penetration of the magnetic moment into superconductor exceeds the coherence length for cuprate superconductor. This fact points on the dominance of the mechanism of the induced magnetic moment of Cu atoms due to orbital reconstruction.
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The superconducting proximity effect has played an important role in recent work searching for Majorana modes in thin semiconductor devices. Using transport measurements to quantify the changes in the semiconductor caused by the proximity effect provides a measure of dynamical processes such as screening and scattering. However, in a two terminal measurement the resistance due to the interface conductance is in series with resistance of transport in the semiconductor. Both of these change, and it is impossible to separate them without more information. We have devised a new three terminal device that provides two resistance measurements that are sufficient to extract both the junction conductance and the two dimensional sheet resistance under the superconducting contact. We have compared junctions between Nb and InAs and Nb and 30% InGaAs all grown before being removed from the ultra high vacuum molecular beam epitaxy growth system. The most transparent junctions are to InAs, where the transmission coefficient per Landauer mode is greater than 0.6. Contacts made with ex-situ deposition are substantially more opaque. We find that for the most transparent junctions, the largest fractional change as the temperature is lowered is to the resistance of the semiconductor.
We investigate inverse proximity effects in a spin-triplet superconductor (TSC) interfaced with a ferromagnet (FM), assuming different types of magnetic profiles and chiral or helical pairings. The region of the coexistence of spin-triplet superconductivity and magnetism is significantly influenced by the orientation and spatial extension of the magnetization with respect to the spin configuration of the Cooper pairs, resulting into clearcut anisotropy signatures. A characteristic mark of the inverse proximity effect arises in the induced spin-polarization at the TSC interface. This is unexpectedly stronger when the magnetic proximity is weaker, thus unveiling immediate detection signatures for spin-triplet pairs. We show that an anomalous magnetic proximity can occur at the interface between the itinerant ferromagnet, SrRuO$_3$, and the unconventional superconductor Sr$_2$RuO$_4$. Such scenario indicates the potential to design characteristic inverse proximity effects in experimentally available SrRuO$_3$-Sr$_2$RuO$_4$ heterostructures and to assess the occurrence of spin-triplet pairs in the highly debated superconducting phase of Sr$_2$RuO$_4$.
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A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between a ferroelectric barrier and magnetic La1-xSrxMnO3 electrode. Using first-principles density functional theory we demonstrate that a few magnetic monolayers of La1-xSrxMnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic scale spin-valve by filtering spin-dependent current. This effect produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.
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