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Register a new userGiant Tunneling Electroresistance Effect Driven by an Electrically Controlled Spin Valve at a Complex Oxide Interface
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A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between a ferroelectric barrier and magnetic La1-xSrxMnO3 electrode. Using first-principles density functional theory we demonstrate that a few magnetic monolayers of La1-xSrxMnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic scale spin-valve by filtering spin-dependent current. This effect produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.
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Heterostructures consisting of a cuprate superconductor YBa2Cu3O7x and a ruthenate/manganite (SrRuO3/La0.7Sr0.3MnO3) spin valve have been studied by SQUID magnetometry, ferromagnetic resonances and neutron reflectometry. It was shown that due to the influence of magnetic proximity effect a magnetic moment is induced in the superconducting part of heterostructure and at the same time the magnetic moment is suppressed in the ferromagnetic spin valve. The experimental value of magnetization induced in the superconductor has the same order of magnitude with the calculations based on the induced magnetic moment of Cu atoms due to orbital reconstruction at the superconductor-ferromagnetic interface. It corresponds also to the model that takes into account the change in the density of states at a distance of order of the coherence length in the superconductor. The experimentally obtained characteristic length of penetration of the magnetic moment into superconductor exceeds the coherence length for cuprate superconductor. This fact points on the dominance of the mechanism of the induced magnetic moment of Cu atoms due to orbital reconstruction.
The ferroelectric (FE) control of electronic transport is one of the emerging technologies in oxide heterostructures. Many previous studies in FE tunnel junctions (FTJs) exploited solely the differences in the electrostatic potential across the FTJs that are induced by changes in the FE polarization direction. Here, we show that in practice the junction current ratios between the two polarization states can be further enhanced by the electrostatic modification in the correlated electron oxide electrodes, and that FTJs with nanometer thin layers can effectively produce a considerably large electroresistance ratio at room temperature. To understand these surprising results, we employed an additional control parameter, which is related to the crossing of electronic and magnetic phase boundaries of the correlated electron oxide. The FE-induced phase modulation at the heterointerface ultimately results in an enhanced electroresistance effect. Our study highlights that the strong coupling between degrees of freedom across heterointerfaces could yield versatile and novel applications in oxide electronics.
Two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e. spin-to-charge conversion) in the 2DEG layer is reported. However, the direct effect of charge-to-spin conversion, an essential ingredient for spintronic devices in a current induced spin-orbit torque scheme, has not been demonstrated yet. Here we show, for the first time, a highly efficient spin generation with the efficiency of ~6.3 in the STO/LAO/CoFeB structure at room temperature by using spin torque ferromagnetic resonance. In addition, we suggest that the spin transmission through the LAO layer at high temperature range is attributed to the inelastic tunneling via localized states in the LAO band gap. Our findings may lead to potential applications in the oxide insulator based spintronic devices.
Atomically flat interfaces between ternary oxides have chemically different variants, depending on the terminating lattice planes of both oxides. Electronic properties change with the interface termination which affects, for instance, charge accumulation and magnetic interactions at the interface. Well-defined terminations have yet rarely been achieved for oxides of ABO3 type (with metals A, B). Here, we report on a strategy of thin film growth and interface characterization applied to fabricate the La0.7Sr0.3MnO3-SrRuO3 interface with controlled termination. Ultra-strong antiferromagnetic coupling between the ferromagnets occurs at the MnO2-SrO interface, but not for the other termination, in agreement with density functional calculations. X-ray magnetic circular dichroism measurements reveal coupled reversal of Mn and Ru magnetic moments at the MnO2-SrO interface. Our results demonstrate termination control of magnetic coupling across a complex oxide interface and provide a pathway for theoretical and experimental explorations of novel electronic interface states with engineered magnetic properties.
Developing smart membranes that allow precise and reversible control of molecular permeation using external stimuli would be of intense interest for many areas of science: from physics and chemistry to life-sciences. In particular, electrical control of water permeation through membranes is a long-sought objective and is of crucial importance for healthcare and related areas. Currently, such adjustable membranes are limited to the modulation of wetting of the membranes and controlled ion transport, but not the controlled mass flow of water. Despite intensive theoretical work yielding conflicting results, the experimental realisation of electrically controlled water permeation has not yet been achieved. Here we report electrically controlled water permeation through micrometre-thick graphene oxide (GO) membranes. By controllable electric breakdown, conductive filaments are created in the GO membrane. The electric field concentrated around such current carrying filaments leads to controllable ionisation of water molecules in graphene capillaries, allowing precise control of water permeation: from ultrafast permeation to complete blocking. Our work opens up an avenue for developing smart membrane technologies and can revolutionize the field of artificial biological systems, tissue engineering and filtration.
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