No Arabic abstract
The interactions between electrons and phonons drive a large array of technologically relevant material properties including ferroelectricity, thermoelectricity, and phase-change behaviour. In the case of many group IV-VI, V, and related materials, these interactions are strong and the materials exist near electronic and structural phase transitions. Their close proximity to phase instability produces a fragile balance among the various properties. The prototypical example is PbTe whose incipient ferroelectric behaviour has been associated with large phonon anharmonicity and thermoelectricity. Experimental measurements on PbTe reveal anomalous lattice dynamics, especially in the soft transverse optical phonon branch. This has been interpreted in terms of both giant anharmonicity and local symmetry breaking due to off-centering of the Pb ions. The observed anomalies have prompted renewed theoretical and computational interest, which has in turn revived focus on the extent that electron-phonon interactions drive lattice instabilities in PbTe and related materials. Here, we use Fourier-transform inelastic x-ray scattering (FT-IXS) to show that photo-injection of free carriers stabilizes the paraelectric state. With support from constrained density functional theory (CDFT) calculations, we find that photoexcitation weakens the long-range forces along the cubic direction tied to resonant bonding and incipient ferroelectricity. This demonstrates the importance of electronic states near the band edges in determining the equilibrium structure.
We report femtosecond optical pump and x-ray diffraction probe experiments on SnSe. We find that under photoexcitation, SnSe has an instability towards an orthorhombically-distorted rocksalt structure that is not present in the equilibrium phase diagram. The new lattice instability is accompanied by a drastic softening of the lowest frequency A$_g$ phonon which is usually associated with the thermodynamic Pnma-Cmcm transition. However, our reconstruction of the transient atomic displacements shows that instead of moving towards the Cmcm structure, the material moves towards a more symmetric orthorhombic distortion of the rock-salt structure belonging to the Immm space group. The experimental results combined with density functional theory (DFT) simulations show that photoexcitation can act as a state-selective perturbation of the electronic distribution, in this case by promoting electrons from Se 4$p$ Sn 5$s$ derived bands from deep below the Fermi level. The subsequent potential energy landscape modified by such electronic excitation can reveal minima with metastable phases that are distinct from those accessible in equilibrium. These results may have implications for optical control of the thermoelectric, ferroelectric and topological properties of the monochalcogenides and related materials.
The nanodomain pattern in ferroelectric/dielectric superlattices transforms to a uniform polarization state under above-bandgap optical excitation. X-ray scattering reveals a disappearance of domain diffuse scattering and an expansion of the lattice. The reappearance of the domain pattern occurs over a period of seconds at room temperature, suggesting a transformation mechanism in which charge carriers in long-lived trap states screen the depolarization field. A Landau-Ginzburg-Devonshire model predicts changes in lattice parameter and a critical carrier concentration for the transformation.
Laser-induced nonthermal melting in semiconductors has been studied for several decades, but the melting mechanism is still under debate. Based on real-time time-dependent density functional theory (rt-TDDFT) simulation, we reveal that the rapid nonthermal melting induced by photoexcitation in silicon originates from a local dynamic instability rather than a homogeneous inertial mechanism. Due to this local dynamic instability, any initial small random displacements can be amplified, create a local self-trapping mechanism for the excited carrier. This carrier self-trapping will amplify the initial randomness, cause locally nonthermal melting spots. Such locally melted spots gradually diffuse to the whole system achieving overall nonthermal melting within 200 fs. We also found that the initial hot carrier cooling towards the anti-bonding state is essential in order to realize this dynamic instability. This causes different cooling time depending on the excitation laser frequency, in accordance with the experimental observations. Our study provides an exquisite detail for the nonthermal melting mechanism.
Quest for new states of matter near an ordered phase is a promising route for making modern physics forward. By probing thermal properties of a ferroelectric (FE) crystal Ba1-xSrxAl2O4, we have clarified that low-energy excitation of acoustic phonons is remarkably enhanced with critical behavior at the border of the FE phase. The phonon spectrum is significantly damped toward the FE phase boundary and transforms into glasslike phonon excitation which is reminiscent of a boson peak. This system thus links long-standing issues of amorphous solids and structural instability in crystals to pave the way to controlling lattice fluctuation as a new tuning parameter.
A thermodynamic theory is developed for dense laminar domain structures in epitaxial ferrolectric films. It is found that, at some critical misfit strain between the film and substrate, the 90 degrees c/a/c/a domain structure becomes unstable with respect to the appearance of the polarization component parallel to domain walls, which results in the formation of a heterophase structure. For PbTiO_3 and BaTiO_3 films, the stability ranges of polydomain and heterophase states are determined using misfit strain - temperature diagrams. Dielectric anomalies accompanying misfit-strain-driven structural transformations are described.