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Register a new userTwo-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks
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Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling (SOC). For example, theory [1-4] indicates that the interface between a one-dimensional (1D) semiconductor (Sm) with strong SOC and a superconductor (S) hosts Majorana modes with nontrivial topological properties [5-8]. Recently, epitaxial growth of Al on InAs nanowires was shown to yield a high quality S-Sm system with uniformly transparent interfaces [9] and a hard induced gap, indicted by strongly suppressed sub gap tunneling conductance [10]. Here we report the realization of a two-dimensional (2D) InAs/InGaAs heterostructure with epitaxial Al, yielding a planar S-Sm system with structural and transport characteristics as good as the epitaxial wires. The realization of 2D epitaxial S-Sm systems represent a significant advance over wires, allowing extended networks via top-down processing. Among numerous potential applications, this new material system can serve as a platform for complex networks of topological superconductors with gate-controlled Majorana zero modes [1-4]. We demonstrate gateable Josephson junctions and a highly transparent 2D S-Sm interface based on the product of excess current and normal state resistance.
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Semiconductor-superconductor hybrids are commonly used in research on topological quantum computation. Traditionally, top-down approaches involving dry or wet etching are used to define the device geometry. These often aggressive processes risk causing damage to material surfaces, giving rise to scattering sites particularly problematic for quantum applications. Here, we propose a method that maintains the flexibility and scalability of selective area grown nanowire networks while omitting the necessity of etching to create hybrid segments. Instead, it takes advantage of directional growth methods and uses bottom-up grown InP structures as shadowing objects to obtain selective metal deposition. The ability to lithographically define the position and area of these objects, and to grow a predefined height, ensures precise control of the shadowed region. We demonstrate the approach by growing InSb nanowire networks with well-defined Al and Pb islands. Cross-section cuts of the nanowires reveal a sharp, oxide-free interface between semiconductor and superconductor. By growing InP structures on both sides of in-plane nanowires, a combination of Pt and Pb can independently be shadow deposited, enabling a scalable and reproducible in-situ device fabrication. The semiconductor-superconductor nanostructures resulting from this approach are at the forefront of material development for Majorana based experiments.
We show that the surface of an $s$-wave superconductor decorated with a two-dimensional lattice of magnetic impurities can exhibit chiral topological superconductivity. If impurities order ferromagnetically and the superconducting surface supports a sufficiently strong Rashba-type spin-orbit coupling, Shiba sub-gap states at impurity locations can hybridize into Bogoliubov bands with non-vanishing, sometimes large, Chern number $C$. This topological superconductor supports $C$ chiral Majorana edge modes. We construct phase diagrams for model two-dimensional superconductors, accessing the dilute and dense magnetic impurity limits analytically and the intermediate regime numerically. To address potential experimental systems, we identify stable configurations of ferromagnetic iron atoms on the Pb (111) surface and conclude that ferromagnetic adatoms on Pb surfaces can provide a versatile platform for two-dimensional topological superconductivity.
We investigate zero-bias conductance peaks that arise from coalescing subgap Andreev states, consistent with emerging Majorana zero modes, in hybrid semiconductor-superconductor wires defined in a two-dimensional InAs/Al heterostructure using top-down lithography and gating. The measurements indicate a hard superconducting gap, ballistic tunneling contact, and in-plane critical fields up to $3$~T. Top-down lithography allows complex geometries, branched structures, and straightforward scaling to multicomponent devices compared to structures made from assembled nanowires.
We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap and unpoisoned 2e-periodic Coulomb blockade, with temperature dependent 1e features in agreement with theory. Coulomb peak spacing in parallel magnetic field displays overshoot, indicating an oscillating discrete near-zero subgap state consistent with device length. Finally, we investigate a loop network, finding strong spin-orbit coupling and a coherence length of several microns. These results demonstrate the potential of this platform for scalable topological networks among other applications.
Semiconductors in the proximity of superconductors have been proposed to support phases hosting Majorana bound states. When the systems undergo a topological phase transition towards the Majorana phase, the spectral gap closes, then reopens, and the quasiparticle band spin polarization is inverted. We focus on two paradigmatic semiconductor-superconductor heterostructures and propose an all-electrical spectroscopic probe sensitive to the spin inversion at the topological transition. Our proposal relies on the indirect coupling of a time-dependent electric field to the electronic spin due to the strong Rashba spin-orbit coupling in the semiconductor. We analyze within linear response theory the dynamical correlation functions and demonstrate that some components of the susceptibility can be used to detect the nontrivial topological phases.
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