Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userUniversal Platform for Scalable Semiconductor-Superconductor Nanowire Networks
61
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Semiconductor-superconductor hybrids are commonly used in research on topological quantum computation. Traditionally, top-down approaches involving dry or wet etching are used to define the device geometry. These often aggressive processes risk causing damage to material surfaces, giving rise to scattering sites particularly problematic for quantum applications. Here, we propose a method that maintains the flexibility and scalability of selective area grown nanowire networks while omitting the necessity of etching to create hybrid segments. Instead, it takes advantage of directional growth methods and uses bottom-up grown InP structures as shadowing objects to obtain selective metal deposition. The ability to lithographically define the position and area of these objects, and to grow a predefined height, ensures precise control of the shadowed region. We demonstrate the approach by growing InSb nanowire networks with well-defined Al and Pb islands. Cross-section cuts of the nanowires reveal a sharp, oxide-free interface between semiconductor and superconductor. By growing InP structures on both sides of in-plane nanowires, a combination of Pt and Pb can independently be shadow deposited, enabling a scalable and reproducible in-situ device fabrication. The semiconductor-superconductor nanostructures resulting from this approach are at the forefront of material development for Majorana based experiments.
rate research
Read More
Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling (SOC). For example, theory [1-4] indicates that the interface between a one-dimensional (1D) semiconductor (Sm) with strong SOC and a superconductor (S) hosts Majorana modes with nontrivial topological properties [5-8]. Recently, epitaxial growth of Al on InAs nanowires was shown to yield a high quality S-Sm system with uniformly transparent interfaces [9] and a hard induced gap, indicted by strongly suppressed sub gap tunneling conductance [10]. Here we report the realization of a two-dimensional (2D) InAs/InGaAs heterostructure with epitaxial Al, yielding a planar S-Sm system with structural and transport characteristics as good as the epitaxial wires. The realization of 2D epitaxial S-Sm systems represent a significant advance over wires, allowing extended networks via top-down processing. Among numerous potential applications, this new material system can serve as a platform for complex networks of topological superconductors with gate-controlled Majorana zero modes [1-4]. We demonstrate gateable Josephson junctions and a highly transparent 2D S-Sm interface based on the product of excess current and normal state resistance.
We fabricate three-terminal hybrid devices with a nanowire segment proximitized by a superconductor, and with two tunnel probe contacts on either side of that segment. We perform simultaneous tunneling measurements on both sides. We identify some states as delocalized above-gap states observed on both ends, and some states as localized near one of the tunnel barriers. Delocalized states can be traced from zero to finite magnetic fields beyond 0.5 T. In the parameter regime of delocalized states, we search for correlated subgap resonances required by the Majorana zero mode hypothesis. While both sides exhibit ubiquitous low-energy features at high fields, no correlation is inferred. Simulations using a one-dimensional effective model suggest that delocalized states may belong to lower one-dimensional subbands, while the localized states originate from higher subbands. To avoid localization in higher subbands, disorder may need to be further reduced to realize Majorana zero modes.
Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. We report electrical measurements on InSb nanowires contacted with one normal (Au) and one superconducting electrode (NbTiN). Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence of magnetic fields of order 100 mT we observe bound, mid-gap states at zero bias voltage. These bound states remain fixed to zero bias even when magnetic fields and gate voltages are changed over considerable ranges. Our observations support the hypothesis of Majorana fermions in nanowires coupled to superconductors.
Hybrid superconductor-semiconductor nanowires are predicted to undergo a field-induced phase transition from a trivial to a topological superconductor, marked by the closure and re-opening of the excitation gap, followed by the emergence of Majorana bound states at the nanowire ends. Many local density-of-states measurements have reported signatures of the topological phase, however this interpretation has been challenged by alternative explanations. Here, by measuring nonlocal conductance, we identify the closure of the excitation gap in the bulk of the semiconductor before the emergence of zero-bias peaks. This observation is inconsistent with scenarios where zero-bias peaks occur due to end-states with a trivially gapped bulk, which have been extensively considered in the theoretical and experimental literature. We observe that after the gap closes, nonlocal signals fluctuate strongly and persist irrespective of the presence of local-conductance zero-bias peaks. Thus, our observations are also incompatible with a simple picture of clean topological superconductivity. This work presents a new experimental approach for probing the spatial extent of states in Majorana wires, and reveals the presence of a regime with a continuum of spatially extended states and uncorrelated zero-bias peaks.
Conductance at zero source-drain voltage bias in InSb nanowire/NbTiN superconductor devices exhibits peaks that are close to a quantized value of $2e^2/h$. The nearly quantized resonances evolve in the tunnel barrier strength, magnetic field and magnetic field orientation in a way consistent with Majorana zero modes. Our devices feature two tunnel probes on both ends of the nanowire separated by a 400 nm nanowire segment covered by the superconductor. We only find nearly quantized zero bias peaks localized to one end of the nanowire, while conductance dips are observed for the same parameters on the other end. This undermines the Majorana explanation as Majorana modes must come in pairs. We do identify states delocalized from end to end near zero magnetic field and at higher electron density, which is not in the basic Majorana regime. We lay out procedures for assessing the nonlocality of subgap wavefunctions and provide a classification of nanowire bound states based on their localization.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
