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Register a new userMeasurement of Topological Berry Phase in Highly Disordered Graphene
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We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C $approx 0.1%$. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against introduction of disorder by hydrogenation in large scale graphene.
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When a gap of tunable size opens at the conic band intersections of graphene, the Berry phase does not vanish abruptly, but progressively decreases as the gap increases. The phase depends on the reciprocal-space path radius, i.e., for a doped system, the Fermi wave vector. The phase and its observable consequences can thus be tuned continuously via gap opening --by a modulating potential induced by strain, epitaxy, or nanostructuration-- and doping adjustment.
We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs with the presence of high electric field and perpendicular magnetic field..
Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography on the surface of a large size (5x5 mm) industrial monolayer graphene film. Samples were irradiated by different doses of C${}^+$ ion beam up to $10^{15}$ cm${}^{-2}$. It was observed that at the utmost degree of disorder, the Raman spectra lines disappear which is accompanied by the exponential increase of resistance and change in the current-voltage characteristics.These effects are explained by suggestion that highly disordered graphene film ceases to be a continuous and splits into separate fragments. The relationship between structure (intensity of RS lines) and sample resistance is defined. It is shown that the maximal resistance of the continuous film is of order of reciprocal value of the minimal graphene conductivity $pi h/4e^2approx 20$ kOhm.
Negative longitudinal magnetoresistance, in the presence of an external magnetic field parallel to the direction of an applied current, has recently been experimentally verified in Weyl semimetals and topological insulators in the bulk conduction limit. The appearance of negative longitudinal magnetoresistance in topological semimetals is understood as an effect of chiral anomaly, whereas it is not well-defined in topological insulators. Another intriguing phenomenon, planar Hall effect - appearance of a transverse voltage in the plane of applied co-planar electric and magnetic fields not perfectly aligned to each other, a configuration in which the conventional Hall effect vanishes, has recently been suggested to exist in Weyl semimetals. In this paper we present a quasi-classical theory of planar Hall effect of a three-dimensional topological insulator in the bulk conduction limit. Starting from Boltzmann transport equations we derive the expressions for planar Hall conductivity and longitudinal magnetoconductivity in topological insulators and show the important roles played by the orbital magnetic moment for the appearance of planar Hall effect. Our theoretical results predict specific experimental signatures for topological insulators that can be directly checked in experiments.
We demonstrate that dislocations in the graphene lattice give rise to electron Berry phases equivalent to quantized values {0,1/3,-1/3} in units of the flux quantum, but with an opposite sign for the two valleys. An elementary scale consideration of a graphene Aharonov-Bohm ring equipped with valley filters on both terminals, encircling a dislocation, says that in the regime where the intervalley mean free path is large compared to the intravalley phase coherence length, such that the valley quantum numbers can be regarded as conserved on the relevant scale, the coherent valley-polarized currents sensitive to the topological phases have to traverse the device many times before both valleys contribute, and this is not possible at intermediate temperatures where the latter length becomes of order of the device size, thus leading to an apparent violation of the basic law of linear transport that magnetoconductance is even in the applied flux. We discuss this discrepancy in the Feynman path picture of dephasing, when addressing the transition from quantum to classical dissipative transport. We also investigate this device in the scattering matrix formalism, accounting for the effects of decoherence by the Buttiker dephasing voltage probe type model which conserves the valleys, where the magnetoconductance remains even in the flux, also when different decoherence times are allowed for the individual, time reversal connected, valleys.
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