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Register a new userBerry phase theory of planar Hall effect in Topological Insulators
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Negative longitudinal magnetoresistance, in the presence of an external magnetic field parallel to the direction of an applied current, has recently been experimentally verified in Weyl semimetals and topological insulators in the bulk conduction limit. The appearance of negative longitudinal magnetoresistance in topological semimetals is understood as an effect of chiral anomaly, whereas it is not well-defined in topological insulators. Another intriguing phenomenon, planar Hall effect - appearance of a transverse voltage in the plane of applied co-planar electric and magnetic fields not perfectly aligned to each other, a configuration in which the conventional Hall effect vanishes, has recently been suggested to exist in Weyl semimetals. In this paper we present a quasi-classical theory of planar Hall effect of a three-dimensional topological insulator in the bulk conduction limit. Starting from Boltzmann transport equations we derive the expressions for planar Hall conductivity and longitudinal magnetoconductivity in topological insulators and show the important roles played by the orbital magnetic moment for the appearance of planar Hall effect. Our theoretical results predict specific experimental signatures for topological insulators that can be directly checked in experiments.
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A prominent feature of topological insulators (TIs) is the surface states comprising of spin-nondegenerate massless Dirac fermions. Recent technical advances have made it possible to address the surface transport properties of TI thin films while tuning the Fermi levels of both top and bottom surfaces across the Dirac point by electrostatic gating. This opened the window for studying the spin-nondegenerate Dirac physics peculiar to TIs. Here we report our discovery of a novel planar Hall effect (PHE) from the TI surface, which results from a hitherto-unknown resistivity anisotropy induced by an in-plane magnetic field. This effect is observed in dual-gated devices of bulk-insulating Bi$_{2-x}$Sb$_{x}$Te$_{3}$ thin films, in which both top and bottom surfaces are gated. The origin of PHE is the peculiar time-reversal-breaking effect of an in-plane magnetic field, which anisotropically lifts the protection of surface Dirac fermions from back-scattering. The key signature of the field-induced anisotropy is a strong dependence on the gate voltage with a characteristic two-peak structure near the Dirac point which is explained theoretically using a self-consistent T-matrix approximation. The observed PHE provides a new tool to analyze and manipulate the topological protection of the TI surface in future experiments.
The metallic surface state of a topological insulator (TI) is not only topologically protected, but exhibits a remarkable property of inducing an effective vector potential on curved surfaces. For an electron in the surface state of a spherical or a cylindrical TI (TI nanoparticle or nanowire) a pseudo-magnetic monopole or a fictitious solenoid is effectively induced, encoding the geometry of the system. Here, by taking an example of a hyperbolic surface we demonstrate that as a consequence of this property stemming from its active spin degree of freedom, the surface state is by itself topologically protected.
The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quant
We evaluate the topological character of TaAs through a detailed study of the angular, magnetic-field and temperature dependence of its magnetoresistivity and Hall-effect(s), and of its bulk electronic structure through quantum oscillatory phenomena. At low temperatures, and for fields perpendicular to the electrical current, we extract an extremely large Hall angle $Theta_H$ at higher fields, that is $Theta_H sim 82.5^{circ}$, implying a very pronounced Hall signal superimposed into its magnetoresistivity. For magnetic fields and electrical currents perpendicular to the emph{c}-axis we observe a very pronounced planar Hall-effect, when the magnetic field is rotated within the basal plane. This effect is observed even at higher temperatures, i.e. as high as $T = 100$ K, and predicted recently to result from the chiral anomaly among Weyl points. Superimposed onto this planar Hall, which is an even function of the field, we observe an anomalous planar Hall-signal akin to the one reported for that is an odd function of the field. Below 100 K, negative longitudinal magnetoresistivity (LMR), initially ascribed to the chiral anomaly and subsequently to current inhomogeneities, is observed in samples having different geometries and contact configurations, once the large Hall signal is subtracted. Our measurements reveal a phase transition upon approaching the quantum limit that leads to the reconstruction of the FS and to the concomitant suppression of the negative LMR indicating that it is intrinsically associated with the Weyl dispersion at the Fermi level. For fields along the emph{a}-axis it also leads to a pronounced hysteresis pointing to a field-induced electronic phase-transition. This collection of unconventional tranport observations points to the prominent role played by the axial anomaly among Weyl nodes.
We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of ferromagnetic insulator Cr2Ge2Te6 and topological insulator (Bi,Sb)2Te3. Despite small magnetization in the (Bi,Sb)2Te3 layer, the anomalous Hall conductivity reaches a large value of 0.2e2/h in accord with a ferromagnetic response of the Cr2Ge2Te6. The results show that the exchange coupling between the surface state of the topological insulator and the proximitized Cr2Ge2Te6 layer is effective and strong enough to open the sizable exchange gap in the surface state.
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