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Register a new userMassive and massless Dirac fermions in Pb1-xSnxTe topological crystalline insulator probed by magneto-optical absorption
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Dirac fermions in condensed matter physics hold great promise for novel fundamental physics, quantum devices and data storage applications. IV-VI semiconductors, in the inverted regime, have been recently shown to exhibit massless topological surface Dirac fermions protected by crystalline symmetry, as well as massive bulk Dirac fermions. Under a strong magnetic field (B), both surface and bulk states are quantized into Landau levels that disperse as B^1/2, and are thus difficult to distinguish. In this work, magneto-optical absorption is used to probe the Landau levels of high mobility Bi-doped Pb0.54Sn0.46Te topological crystalline insulator (111)-oriented films. The high mobility achieved in these thin film structures allows us to probe and distinguish the Landau levels of both surface and bulk Dirac fermions and extract valuable quantitative information about their physical properties. This work paves the way for future magnetooptical and electronic transport experiments aimed at manipulating the band topology of such materials.
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We perform systematic angle-resolved photoemission spectroscopic measurements on the lead tin telluride Pb1-xSnxTe pseudobinary alloy system. We show that the (001) crystalline surface, which is a crystalline surface symmetric about the (110) mirror planes of the Pb1-xSnxTe crystal, pos- sesses four metallic surface states within its surface Brillouin zone. Our systematic Fermi surface and band topology measurements show that the observed Dirac-like surface states lie on the symmetric momentum-space cuts. We further show that upon going to higher electron binding energies, the surface states isoenergetic countours in close vicinity of each X point are observed to hybridize with each other, leading to a Fermi surface fractionalization and the Lifshitz transition. In addition, systematic incident photon energy dependent measurements are performed, which enable us to un- ambiguously identify the surface states from the bulk bands. These systematic measurements of the surface and bulk electronic structure on Pb1-xSnxTe, supported by our first principles calculation results, for the first time, show that the Pb1-xSnxTe system belongs to the topological crystalline insulator phase due to the four band
The recent theoretical prediction and experimental realization of topological insulators (TI) has generated intense interest in this new state of quantum matter. The surface states of a three-dimensional (3D) TI such as Bi_2Te_3, Bi_2Se_3 and Sb_2Te_3 consist of a single massless Dirac cones. Crossing of the two surface state branches with opposite spins in the materials is fully protected by the time reversal (TR) symmetry at the Dirac points, which cannot be destroyed by any TR invariant perturbation. Recent advances in thin-film growth have permitted this unique two-dimensional electron system (2DES) to be probed by scanning tunneling microscopy (STM) and spectroscopy (STS). The intriguing TR symmetry protected topological states were revealed in STM experiments where the backscattering induced by non-magnetic impurities was forbidden. Here we report the Landau quantization of the topological surface states in Bi_2Se_3 in magnetic field by using STM/STS. The direct observation of the discrete Landau levels (LLs) strongly supports the 2D nature of the topological states and gives direct proof of the nondegenerate structure of LLs in TI. We demonstrate the linear dispersion of the massless Dirac fermions by the square-root dependence of LLs on magnetic field. The formation of LLs implies the high mobility of the 2DES, which has been predicted to lead to topological magneto-electric effect of the TI.
Pb$_{1-x}$Sn$_x$Te has been shown to be an interesting tunable topological crystalline insulator system. We present a magneto-terahertz spectroscopic study of thin films of Pb$_{0.5}$Sn$_{0.5}$Te. The complex Faraday rotation angle and optical conductivity in the circular basis are extracted without any additional assumptions. Our quantitative measures of the THz response allow us to show that the sample studied contains two types of bulk carriers. One is $p$-type and originates in 3D Dirac bands. The other is $n$-type and appears to be from more conventional 3D bands. These two types of carriers display different cyclotron resonance dispersions. Through simulating the cyclotron resonance of hole carriers, we can determine the Fermi energy and Fermi velocity. Furthermore, the scattering rates of $p$-type and $n$-type carriers were found to show opposite field dependences, which can be attributed to their different Landau level broadening behaviors under magnetic field. Our work provides a new way to isolate real topological signatures of bulk states in Dirac and Weyl semimetals.
We have investigated the absorption spectrum of multilayer graphene in high magnetic fields. The low energy part of the spectrum of electrons in graphene is well described by the relativistic Dirac equation with a linear dispersion relation. However, at higher energies (>500 meV) a deviation from the ideal behavior of Dirac particles is observed. At an energy of 1.25 eV, the deviation from linearity is 40 meV. This result is in good agreement with the theoretical model, which includes trigonal warping of the Fermi surface and higher-order band corrections. Polarization-resolved measurements show no observable electron-hole asymmetry.
We report on magneto-optical studies of Bi2Se3, a representative member of the 3D topological insulator family. Its electronic states in bulk are shown to be well described by a simple Dirac-type Hamiltonian for massive particles with only two parameters: the fundamental bandgap and the band velocity. In a magnetic field, this model implies a unique property - spin splitting equal to twice the cyclotron energy: Es = 2Ec. This explains the extensive magneto-transport studies concluding a fortuitous degeneracy of the spin and orbital split Landau levels in this material. The Es = 2Ec match differentiates the massive Dirac electrons in bulk Bi2Se3 from those in quantum electrodynamics, for which Es = Ec always holds.
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