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Register a new userNernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb1-xSnxSe
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Krzysztof Dybko Dr.
Publication date
2015
fields
Physics
and research's language is
English
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The transverse Nernst Ettingshausen (N-E) effect and electron mobility in Pb$_{1-x}$Sn$_x$Se alloys are studied experimentally and theoretically as functions of temperature and chemical composition in the vicinity of vanishing energy gap $E_g$. The study is motivated by the recent discovery that, by lowering the temperature, one can change the band ordering from trivial to nontrivial one in which the topological crystalline insulator states appear at the surface. Our work presents several new aspects. It is shown experimentally and theoretically that the bulk N-E effect has a maximum when the energy gap $E_g$ of the mixed crystal goes through zero value. This result contradicts the claim made in the literature that the N-E effect changes sign when the gap vanishes. We successfully describe $dc$ transport effects in the situation of extreme bands nonparabolicity which, to the best of our knowledge, has never been tried before. A situation is reached in which both two-dimensional bands (topological surface states) and three-dimensional bands are linear in electron textbf{k} vector. Various scattering modes and their contribution to transport phenomena in Pb$_{1-x}$Sn$_x$Se are analyzed. As the energy gap goes through zero, some transport integrals have a singular (nonphysical) behaviour and we demonstrate how to deal with this problem by introducing damping.
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Following the identification of the pi bond in graphene, in this work, a pi bond constructed through side-to-side overlap of half-filled 6pz orbitals was observed in a non-carbon crystal of Pb1-xSnxSe (x=0.34) (PSS), a prototype topological crystalline insulator (TCI) and thermoelectric material with a high figure-of-merit (ZT). PSS compounds with a rock-salt type cubic crystal structure was found to consist of sigma bond connected covalent chains of Pb(Sn)-Se with an additional pi bond that is shared as a conjugated system among the four nearest neighbor Pb pairs in square symmetry within all (001) monoatomic layers per cubic unit cell. The pi bond formed with half-filled 6pz orbitals between Pb atoms is consistent with the calculated results from quantum chemistry. The presence of pi bonds was identified and verified with electron energy-loss spectroscopy (EELS) through plasmonic excitations and electron density (ED) mapping via an inverse Fourier transform of X-ray diffraction.
A magnon Nernst effect, an antiferromagnetic analogue of the magnon Hall effect in ferromagnetic insulators, has been studied experimentally for a layered antiferromagnetic insulator MnPS3 in contact with two Pt strips. Thermoelectric voltage in the Pt strips grown on MnPS3 single crystals exhibits non-monotonic temperature dependence at low temperatures, which cannot be explained by electronic origins in Pt but can be ascribed to the inverse spin Hall voltage induced by a magnon Nernst effect. Control of antiferromagnetic domains in the MnPS3 crystal by magnetoelectric cooling is found to modulate the low-temperature thermoelectric voltage in Pt, which corroborates the emergence of the magnon Nernst effect in Pt|MnPS3 hybrid structures.
We theoretically study magnetoelectric effects in a heterostructure of a generic band insulator and a ferromagnet. In contrast to the kinetic magnetoelectric effect in metals, referred to as the Edelstein effect or the inverse spin galvanic effect, our mechanism relies on virtual interband transitions between the valence and conduction bands and therefore immune to disorder or impurity scattering. By calculating electric field-induced magnetization by the linear response theory, we reveal that the magnetoelectric effect shows up without specific parameter choices. The magnetoelectric effect qualitatively varies by changing the direction of the magnetic moment in the ferromagnet: the response is diagonal for the out-of-plane moment, whereas it is off-diagonal for the inplane moment. We also find out that in optical frequencies, the magnetoelectric signal can be drastically enhanced via interband resonant excitations. Finally, we estimate the magnitude of the magnetoelectric effect for a hybrid halide perovskite semiconductor as an example of the band insulator and compare it with other magnetoelectric materials. We underscore that our mechanism is quite general and widely expectable, only requiring the Rashba spin-orbit coupling and exchange coupling. Our result could potentially offer a promising method of Joule heating-free electric manipulation of magnetic moments in spintronic devices.
A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that has only one magnetic phase. The structure shows a THE in the temperature range of T=2-3 K and an AHE at T=80-300 K. Over T=3-80 K, the two effects coexist but show opposite temperature dependencies. Control measurements, calculations, and simulations together suggest that the observed THE originates from skyrmions, rather than the coexistence of two AHE responses. The skyrmions are formed due to an interfacial DMI interaction. The DMI strength estimated is substantially higher than that in heavy metal-based systems.
Recent theoretical advances have proposed a new class of topological crystalline insulator (TCI) phases protected by rotational symmetries. Distinct from topological insulators (TIs), rotational symmetry-protected TCIs are expected to show unique topologically protected boundary modes: First, the surface normal to the rotational axis features unpinned Dirac surface states whose Dirac points are located at generic k points. Second, due to the higher-order bulk boundary correspondence, a 3D TCI also supports 1D helical edge states. Despite the unique topological electronic properties, to date, purely rotational symmetry-protected TCIs remain elusive in real materials. Using first-principles band calculations and theoretical modeling, we identify the van der Waals material $alpha$-Bi4Br4 as a TCI purely protected by rotation symmetry. We show that the Bi4Br4s (010) surface exhibits a pair of unpinned topological Dirac fermions protected by the two-fold rotational axis. These unpinned Dirac fermions show an exotic spin texture highly favorable for spin transport and a band structure consisting of van Hove singularities due to Lifshitz transition. We also identify 1D topological hinge states along the edges of an $alpha$-Bi4Br4 rod. We further discuss how the proposed topological electronic properties in $alpha$-Bi4Br4 can be observed by various experimental techniques.
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