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Register a new userTopotactic synthesis of a new BiS2-based superconductor Bi2(O,F)S2
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A new BiS2-based superconductor Bi2(O,F)S2 was discovered. This is a layered compound consisting of alternate stacking structure of rock-salt-type BiS2 superconducting layer and fluorite-type Bi(O,F) blocking layer. Bi2(O,F)S2 was obtained as the main phase by topotactic fluorination of undoped Bi2OS2 using XeF2, which is the first topotactic synthesis of an electron-doped superconductor via reductive fluorination. With increasing F-content, a- and c-axis length increased and decreased, respectively, and Tc increased up to 5.1 K.
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Pressure effects on a recently discovered BiS2-based superconductor Bi2(O,F)S2 (Tc = 5.1 K) were examined via two different methods; high pressure resistivity measurement and high pressure annealing. The effects of these two methods on the superconducting properties of Bi2(O,F)S2 were significantly different although in both methods hydrostatic pressure is applied to the sample by the cubic-anvil-type apparatus. In high pressure resistivity measurement, Tc linearly decreased at the rate of -1.2 K GPa-1. In contrast, the Tc of 5.1 K is maintained after high pressure annealing under 2 GPa and 470{deg}C of optimally doped sample despite significant change of lattice parameters. In addition, superconductivity was observed in fluorine-free Bi2OS2 after high pressure annealing. These results suggest that high pressure annealing would cause a unique effect on physical properties of layered compounds.
We report the electrical resistivity measurements under pressure for the recently discovered BiS2-based layered superconductors Bi4O4S3 and La(O,F)BiS2. In Bi4O4S3, the transition temperature Tc decreases monotonically without a distinct change in the metallic behavior in the normal state. In La(O,F)BiS2, on the other hand, Tc initially increases with increasing pressure and then decreases above ? 1 GPa. The semiconducting behavior in the normal state is suppressed markedly and monotonically, whereas the evolution of Tc is nonlinear. The strong suppression of the semiconducting behavior without doping in La(O,F)BiS2 suggests that the Fermi surface is located in the vicinity of some instability. In the present study, we elucidate that the superconductivity in the BiS2 layer favors the Fermi surface at the boundary between the semiconducting and metallic behaviors.
High-quality polycrystalline samples of LaO0.5F0.5BiS2 were obtained using high-pressure synthesis technique. The LaO0.5F0.5BiS2 sample prepared by heating at 700 C under 2 GPa showed superconductivity with superconducting transition temperatures (Tc) of Tconset = 11.1 and Tczero = 8.5 K in the electrical resistivity measurements and Tconset = 11.5 and Tcirr = 9.4 K in the magnetic susceptibility measurements, which are obviously higher than those of the LaO0.5F0.5BiS2 polycrystalline samples obtained using conventional solid-state reaction. It was found that the high-Tc phase can be stabilized under high pressure and relatively-low annealing temperature. X-ray diffraction analysis revealed that the high-Tc phase possessed a small ratio of lattice constants of a and c, c/a.
We have successfully synthesized a new BiS2-based superconductor NdOBiS2 with F-doping. This compound is composed of superconducting BiS2 layers and blocking NdO layers, which indicates that the BiS2 layer is the one of the common superconducting layers like the CuO2 layer of cuprates or Fe-As layer of Fe-based superconductors. We can obtain NdO1-xFxBiS2 with bulk superconductivity by a solid-state reaction under ambient pressure. Therefore, NdO1-xFxBiS2 should be the suitable material to elucidate the mechanism of superconductivity in the BiS2-layer.
We present an optical spectroscopy study on F-substituted NdOBiS$_2$ superconducting single crystals grown using KCl/LiCl flux method. The measurement reveals a simple metallic response with a relatively low screened plasma edge near 5000 cm. The plasma frequency is estimated to be 2.1 eV, which is much smaller than the value expected from the first-principles calculations for an electron doping level of x=0.5, but very close to the value based on a doping level of 7$%$ of itinerant electrons per Bi site as determined by ARPES experiment. The energy scales of the interband transitions are also well reproduced by the first-principles calculations. The results suggest an absence of correlation effect in the compound, which essentially rules out the exotic pairing mechanism for superconductivity or scenario based on the strong electronic correlation effect. The study also reveals that the system is far from a CDW instability as being widely discussed for a doping level of x=0.5.
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