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Register a new userStabilization of high-Tc phase of BiS2-based superconductor LaO0.5F0.5BiS2 using high-pressure synthesis
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Added by
Yoshikazu Mizuguchi
Publication date
2014
fields
Physics
and research's language is
English
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High-quality polycrystalline samples of LaO0.5F0.5BiS2 were obtained using high-pressure synthesis technique. The LaO0.5F0.5BiS2 sample prepared by heating at 700 C under 2 GPa showed superconductivity with superconducting transition temperatures (Tc) of Tconset = 11.1 and Tczero = 8.5 K in the electrical resistivity measurements and Tconset = 11.5 and Tcirr = 9.4 K in the magnetic susceptibility measurements, which are obviously higher than those of the LaO0.5F0.5BiS2 polycrystalline samples obtained using conventional solid-state reaction. It was found that the high-Tc phase can be stabilized under high pressure and relatively-low annealing temperature. X-ray diffraction analysis revealed that the high-Tc phase possessed a small ratio of lattice constants of a and c, c/a.
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We investigated the crystal structure and superconducting properties of As-grown and high-pressure-annealed PrO0.5F0.5BiS2. We found that the high-pressure annealing generates uniaxial lattice contraction along the c axis. Both As-grown and high-pressure-annealed PrO0.5F0.5BiS2 show bulk superconductivity. The Tc of PrO0.5F0.5BiS2 is clearly enhanced from Tczero = 3.6 K to Tczero = 5.5 K by high-pressure annealing. Unexpectedly, the semiconducting characteristics is relatively enhanced by high-pressure annealing. Namely, we assume that the enhancement of Tc can not be understood by an increase of electron carriers. Having considered these facts, we conclude that the enhancement of Tc correlates with uniaxial lattice contraction along the c axis in PrO0.5F0.5BiS2.
A new BiS2-based superconductor Bi2(O,F)S2 was discovered. This is a layered compound consisting of alternate stacking structure of rock-salt-type BiS2 superconducting layer and fluorite-type Bi(O,F) blocking layer. Bi2(O,F)S2 was obtained as the main phase by topotactic fluorination of undoped Bi2OS2 using XeF2, which is the first topotactic synthesis of an electron-doped superconductor via reductive fluorination. With increasing F-content, a- and c-axis length increased and decreased, respectively, and Tc increased up to 5.1 K.
Charge density waves are a common occurrence in all families of high critical temperature superconducting cuprates. Although consistently observed in the underdoped region of the phase diagram and at relatively low temperatures, it is still unclear to what extent they influence the unusual properties of these systems. Using resonant x-ray scattering we carefully determined the temperature dependence of charge density modulations in (Y,Nd)Ba$_2$Cu$_3$O$_{7-{delta}}$ for three doping levels. We discovered short-range dynamical charge density fluctuations besides the previously known quasi-critical charge density waves. They persist up to well above the pseudogap temperature T*, are characterized by energies of few meV and pervade a large area of the phase diagram, so that they can play a key role in shaping the peculiar normal-state properties of cuprates.
We investigate the external hydrostatic pressure effect on the superconducting transition temperature (Tc) of new layered superconductors Bi4O4S3 and NdO0.5F0.5BiS2. Though the Tc is found to have moderate decrease from 4.8 K to 4.3 K (dTconset/dP = -0.28 K/GPa) for Bi4O4S3 superconductor, the same increases from 4.6 K to 5 K (dTconset/dP = 0.44 K/GPa) upto 1.31 GPa followed by a sudden decrease from 5 K to 4.7 K upto 1.75 GPa for NdO0.5F0.5BiS2 superconductor. The variation of Tc in these systems may be correlated to increase or decrease of the charge carriers in the density of states under externally applied pressure.
We study normal state electrical, thermoelectrical and thermal transport in polycrystalline BiS2-based compounds, which become superconducting by F doping on the O site. In particular we explore undoped LaOBiS2 and doped LaO0.5F0.5BiS2 samples, prepared either with or without high pressure annealing, in order to evidence the roles of doping and preparation conditions. The high pressure annealed sample exhibits room temperature values of resistivity ro around 5 mohmcm, Seebeck coefficient S around -20 microV/K and thermal conductivity k around 1.5 W/Km, while the Hall resistance RH is negative at all temperatures and its value is -10-8 m3/C at low temperature. The sample prepared at ambient pressure exhibits RH positive in sign and five times larger in magnitude, and S negative in sign and slightly smaller in magnitude. These results reveal a complex multiband evolution brought about by high pressure annealing. In particular, the sign inversion and magnitude suppression of RH, indicating increased electron-type carrier density in the high pressure sample, may be closely related to previous findings about change in lattice parameters and enhancement of superconducting Tc by high pressure annealing. As for the undoped sample, it exhibits the 10 times larger resistivity, 10 times larger |S| and 10 times larger |RH| than its doped counterpart, consistently with its insulating nature. Our results point out the dramatic effect of preparation conditions in affecting charge carrier density as well as structural, band and electronic parameters in these systems.
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