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Register a new userOrigin of the large anisotropic g-factor of holes in bismuth
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The ratio of the Zeeman splitting to the cyclotron energy ($M=Delta E_{rm Z}/hbar omega_{rm c}$) for hole-like carriers in bismuth has been quantified with a great precision by many experiments performed during the past five decades. It exceeds 2 when the magnetic field is along the trigonal axis and vanishes in the perpendicular configuration. Theoretically, however, $M$ is expected to be isotropic and equal to unity in a two-band Dirac model. We argue that a solution to this half-a-century-old puzzle can be found by extending the $kcdot p$ theory to multiple bands. Our model not only gives a quantitative account of magnitude and anisotropy of $M$ for hole-like carriers in bismuth, but also explains its contrasting evolution with antimony doping pressure, both probed by new experiments reported here. The present results have important implications for the magnitude and anisotropy of $M$ in other systems with strong spin-orbit coupling.
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The mathematical field of topology has become a framework to describe the low-energy electronic structure of crystalline solids. A typical feature of a bulk insulating three-dimensional topological crystal are conducting two-dimensional surface states. This constitutes the topological bulk-boundary correspondence. Here, we establish that the electronic structure of bismuth, an element consistently described as bulk topologically trivial, is in fact topological and follows a generalized bulk-boundary correspondence of higher-order: not the surfaces of the crystal, but its hinges host topologically protected conducting modes. These hinge modes are protected against localization by time-reversal symmetry locally, and globally by the three-fold rotational symmetry and inversion symmetry of the bismuth crystal. We support our claim theoretically and experimentally. Our theoretical analysis is based on symmetry arguments, topological indices, first-principle calculations, and the recently introduced framework of topological quantum chemistry. We provide supporting evidence from two complementary experimental techniques. With scanning-tunneling spectroscopy, we probe the unique signatures of the rotational symmetry of the one-dimensional states located at step edges of the crystal surface. With Josephson interferometry, we demonstrate their universal topological contribution to the electronic transport. Our work establishes bismuth as a higher-order topological insulator.
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