Do you want to publish a course? Click here

Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$

251   0   0.0 ( 0 )
 Added by Rui Lou
 Publication date 2017
  fields Physics
and research's language is English




Ask ChatGPT about the research

While recent advances in band theory and sample growth have expanded the series of extremely large magnetoresistance (XMR) semimetals in transition metal dipnictides $TmPn_2$ ($Tm$ = Ta, Nb; $Pn$ = P, As, Sb), the experimental study on their electronic structure and the origin of XMR is still absent. Here, using angle-resolved photoemission spectroscopy combined with first-principles calculations and magnetotransport measurements, we performed a comprehensive investigation on MoAs$_2$, which is isostructural to the $TmPn_2$ family and also exhibits quadratic XMR. We resolve a clear band structure well agreeing with the predictions. Intriguingly, the unambiguously observed Fermi surfaces (FSs) are dominated by an open-orbit topology extending along both the [100] and [001] directions in the three-dimensional Brillouin zone. We further reveal the trivial topological nature of MoAs$_2$ by bulk parity analysis. Based on these results, we examine the proposed XMR mechanisms in other semimetals, and conclusively ascribe the origin of quadratic XMR in MoAs$_2$ to the carriers motion on the FSs with dominant open-orbit topology, innovating in the understanding of quadratic XMR in semimetals.



rate research

Read More

We report the magnetoresistance of ScSb, which is a semimetal with a simple rocksalt-type structure. We found that the magnetoresistance reaches $sim$28000 % at 2 K and 14 T in our best sample, and it exhibits a resistivity plateau at low temperatures. The Shubnikov-de Haas oscillations extracted from the magnetoresistance data allow the full construction of the Fermi surface, including the so-called $alpha_3$ pocket which has been missing in other closely related monoantimonides, and an additional hole pocket centered at $Gamma$. The electron concentration ($n$) and the hole concentration ($p$) are extracted from our analysis, which indicate that ScSb is a nearly compensated semimetal with $n/papprox0.93$. The calculated band structure indicates the absence of a band inversion, and the large magnetoresistance in ScSb can be attributed to the nearly perfect compensation of electrons and holes, despite the existence of the additional hole pocket.
We report a detailed magnetotransport study on single crystals of PrBi. The presence of $f$-electrons in this material raises the prospect of realizing a strongly correlated version of topological semimetals. PrBi shows a magnetic field induced metal insulator transition below $T sim 20$ K and a very large magnetoresistance ($approx 4.4 times 10^4~$) at low temperatures ($T= 2$ K). We have also probed the Fermi surface topology by de Haas van Alphen (dHvA) and Shubnikov de Haas (SdH) quantum oscillation measurements complimented with density functional theory (DFT) calculations of the band structure and the Fermi surface. Angle dependence of the SdH oscillations have been carried out to probe the possible signature of surface Dirac fermions. We find three frequencies corresponding to one electron ($alpha$) and two hole ($beta$ and $gamma$) pockets in experiments, consistent with DFT calculations. The angular dependence of these frequencies is not consistent with a two dimensional Fermi surface suggesting that the transport is dominated by bulk bands. Although the transport properties of this material originate from the bulk bands, the high mobility and small effective mass are comparable to other compounds in this series proposed as topologically nontrivial.
143 - Yongkang Luo , H. Li , Y. M. Dai 2015
We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron- and hole-type carriers were determined. We observed a sudden increase of the hole density below $sim$160~K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a more pronounced reduction in electron density occurs below 50~K, giving rise to comparable electron and hole densities at low temperature. Our observations indicate a possible electronic structure change below 50~K, which might be the direct driving force of the electron-hole ``compensation and the extremely large magnetoresistance as well. Numerical simulations imply that this material is unlikely to be a perfectly compensated system.
Dirac states hosted by Sb/Bi square nets are known to exist in the layered antiferromagnetic AMnX$_2$ (A = Ca/Sr/Ba/Eu/Yb, X=Sb/Bi) material family the space group to be P4/nmm or I4/mmm. In this paper, we present a comprehensive study of quantum transport behaviors, angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations on SrZnSb2, a nonmagnetic analogue to AMnX2, which crystallizes in the pnma space group with distorted square nets. From the quantum oscillation measurements up to 35 T, three major frequencies including F$_1$ = 103 T, F$_2$ = 127 T and F$_3$ = 160 T, are identified. The effective masses of the quasiparticles associated with these frequencies are extracted, namely, m*$_1$ = 0.1 m$_e$, m*$_2$ = 0.1 m$_e$ and m*$_3$ = 0.09m$_e$, where m$_e$ is the free electron mass. From the three-band Lifshitz-Kosevich fit, the Berry phases accumulated along the cyclotron orbit of the quasiparticles are 0.06$pi$, 1.2$pi$ and 0.74$pi$ for F$_1$, F$_2$ and F$_3$, respectively. Combined with the ARPES data and the first-principles calculations, we reveal that F2 and F3 are associated with the two nontrivial Fermi pockets at the Brillouin zone edge while F1 is associated with the trivial Fermi pocket at the zone center. In addition, the first-principles calculations further suggest the existence of Dirac nodal line in the band structure of SrZnSb$_2$.
Transition-metal dichalcogenides (WTe$_2$ and MoTe$_2$) have drawn much attention, recently, because of the nonsaturating extremely large magnetoresistance (XMR) observed in these compounds in addition to the predictions of likely type-II Weyl semimetals. Contrary to the topological insulators or Dirac semimetals where XMR is linearly dependent on the field, in WTe$_2$ and MoTe$_2$ the XMR is nonlinearly dependent on the field, suggesting an entirely different mechanism. Electron-hole compensation has been proposed as a mechanism of this nonsaturating XMR in WTe$_2$, while it is yet to be clear in the case of MoTe$_2$ which has an identical crystal structure of WTe$_2$ at low temperatures. In this paper, we report low-energy electronic structure and Fermi surface topology of MoTe$_2$ using angle-resolved photoemission spectrometry (ARPES) technique and first-principle calculations, and compare them with that of WTe$_2$ to understand the mechanism of XMR. Our measurements demonstrate that MoTe$_2$ is an uncompensated semimetal, contrary to WTe$_2$ in which compensated electron-hole pockets have been identified, ruling out the applicability of charge compensation theory for the nonsaturating XMR in MoTe$_2$. In this context, we also discuss the applicability of the existing other conjectures on the XMR of these compounds.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا