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Surface electronic state of superconducting topological crystalline insulator

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 Added by Tatsuki Hashimoto
 Publication date 2015
  fields Physics
and research's language is English




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We study the surface state of a doped topological crystalline insulator in the superconducting state. Motivated by Sn$_{1-x}$In$_x$Te, we consider fully gapped pair potentials and calculate the surface spectral function. It is found that mirror-protected zero-energy Andreev bound states appear at the (001) surface and that these states can move along the mirror symmetric line on the surface Brillouin zone. We also show that the surface Andreev bound state changes systematically with doping due to the presence of the Dirac surface state in the normal state.

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We study electronic properties of a superconducting topological insulator whose parent material is a topological insulator. We calculate the temperature dependence of the specific heat and spin susceptibility for four promising superconducting pairings proposed by L. Fu and E. Berg (Phys. Rev. Lett. 105, 097001). Since the line shapes of temperature dependence of specific heat are almost identical among three of the four pairings, it is difficult to identify them simply from the specific heat. On the other hand, we obtain wide varieties of the temperature dependence of spin susceptibility for each pairing reflecting the spin structure of Cooper pair. We propose that the pairing symmetry of superconducting topological insulator can be determined from measurement of Knight shift by changing the direction of applied magnetic field.
We report detailed investigations of the properties of a superconductor obtained by substituting In at the Sn site in the topological crystalline insulator (TCI), SnTe. Transport, magnetization and heat capacity measurements have been performed on crystals of Sn0.6In0.4Te, which is shown to be a bulk superconductor with Tc(onset) at ~4.70(5) K and Tc(zero) at ~3.50(5) K. The upper and lower critical fields are estimated to be {mu}0Hc2(0) = 1.42(3) T and {mu}0Hc1(0) = 0.90(3) mT respectively, while {kappa} = 56.4(8) indicates this material is a strongly type II superconductor.
82 - C. Q. Han , H. Li , W. J. Chen 2015
Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (SrxBi2Se3) was studied. Scanning tunneling microscopy shows that most of the Sr atoms are not in the van der Waals gap. After Sr doping, the Fermi level was found to move further upwards when compared with the parent compound Bi2Se3, which is consistent with the low carrier density in this system. The topological surface state was clearly observed, and the position of the Dirac point was determined in all doped samples. The surface state is well separated from the bulk conduction bands in the momentum space. The persistence of separated topological surface state combined with small Fermi energy makes this superconducting material a very promising candidate for the time reversal invariant topological superconductor
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Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator Cu$_x$Bi$_2$Se$_3$ as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.
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