We use external magnetic field to probe the detection mechanism of superconducting nanowire single photon detector. We argue that the hot belt model (which assumes partial suppression of the superconducting order parameter $Delta$ across the whole width of the superconducting nanowire after absorption of the single photon) does not explain observed weak field dependence of the photon count rate (PCR) for photons with $lambda$=450 nm and noticeable {it decrease} of PCR (with increasing the magnetic field) in some range of the currents for photons with wavelengths $lambda$ =450-1200 nm. Found experimental results for all studied wavelengths $lambda = 450-1550$ nm could be explained by the vortex hot spot model (which assumes partial suppression of $Delta$ in the area with size smaller than the width of the nanowire) if one takes into account nucleation and entrance of the vortices to the photon induced hot spot and their pinning by the hot spot with relatively large size and strongly suppressed $Delta$.
We argue that photon counts in a superconducting nanowire single-photon detector (SNSPD) are caused by the transition from a current-biased metastable superconducting state to the normal state. Such a transition is triggered by vortices crossing the thin film superconducting strip from one edge to another due to the Lorentz force. Detector counts in SNSPDs may be caused by three processes: (a) a single incident photon with energy sufficient to break enough Cooper pairs to create a normal-state belt across the entire width of the strip (direct photon count), (b) thermally induced single-vortex crossing in the absence of photons (dark count), which at high bias currents releases the energy sufficient to trigger the transition to the normal state in a belt across the whole width of the strip, and (c) a single incident photon with insufficient energy to create a normal-state belt but initiating a subsequent single-vortex crossing, which provides the rest of the energy needed to create the normal-state belt (vortex-assisted single photon count). We derive the current dependence of the rate of vortex-assisted photon counts. The resulting photon count rate has a plateau at high currents close to the critical current and drops as a power-law with high exponent at lower currents. While the magnetic field perpendicular to the film plane does not affect the formation of hot spots by photons, it causes the rate of vortex crossings (with or without photons) to increase. We show that by applying a magnetic field one may characterize the energy barrier for vortex crossings and identify the origin of dark counts and vortex-assisted photon counts.
We experimentally investigate the detection mechanism in a meandered molybdenum silicide (MoSi) superconducting nanowire single-photon detector by characterising the detection probability as a function of bias current in the wavelength range of 750 to 2050 nm. Contrary to some previous observations on niobium nitride (NbN) or tungsten silicide (WSi) detectors, we find that the energy-current relation is nonlinear in this range. Furthermore, thanks to the presence of a saturated detection efficiency over the whole range of wavelengths, we precisely quantify the shape of the curves. This allows a detailed study of their features, which are indicative of both Fano fluctuations and position-dependent effects.
We investigate the detection efficiency of a spiral layout of a Superconducting Nanowire Single-Photon Detector (SNSPD). The design is less susceptible to the critical current reduction in sharp turns of the nanowire than the conventional meander design. Detector samples with different nanowire width from 300 to 100 nm are patterned from a 4 nm thick NbN film deposited on sapphire substrates. The critical current IC at 4.2 K for spiral, meander, and simple bridge structures is measured and compared. On the 100 nm wide samples, the detection efficiency is measured in the wavelength range 400-1700 nm and the cut-off wavelength of the hot-spot plateau is determined. In the optical range, the spiral detector reaches a detection efficiency of 27.6%, which is ~1.5 times the value of the meander. In the infrared range the detection efficiency is more than doubled.
We investigated the suitability of AlN as a buffer layer for NbN superconducting nanowire single-photon detectors (SNSPDs) on GaAs. The NbN films with a thickness of 3.3 nm to 20 nm deposited onto GaAs substrates with AlN buffer layer, demonstrate a higher critical temperature, critical current density and lower residual resistivity in comparison to films deposited onto bare substrates. Unfortunately, the thermal coupling of the NbN film to the substrate weakens. SNSPDs made of 4.9 nm thick NbN films on buffered substrates (in comparison to detectors made from NbN films on bare GaAs) demonstrate three orders of magnitude lower dark count rates and about ten times higher detection efficiency at 900 nm being measured at 90% of the critical current. The system timing jitter of SNSPDs on buffered substrates is 72 ps which is 36 ps lower than those on bare substrate. However, a weaker thermal coupling of NbN nanowire to the buffered substrate leads to a latching effect at bias currents > 0.97 IC.