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Register a new userDetermining energy relaxation length scales in two-dimensional electron gases
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We present measurements of the energy relaxation length scale $ell$ in two-dimensional electron gases (2DEGs). A temperature gradient is established in the 2DEG by means of a heating current, and then the elevated electron temperature $T_e$ is estimated by measuring the resultant thermovoltage signal across a pair of deferentially biased bar-gates. We adapt a model by Rojek and K{o}nig [Phys. Rev. B textbf{90}, 115403 (2014)] to analyse the thermovoltage signal and as a result extract $ell$, $T_e$, and the power-law exponent $alpha_i$ for inelastic scattering events in the 2DEG. We show that in high-mobility 2DEGs, $ell$ can attain macroscopic values of several hundred microns, but decreases rapidly as the carrier density $n$ is decreased. Our work demonstrates a versatile low-temperature thermometry scheme, and the results provide important insights into heat transport mechanisms in low-dimensional systems and nanostructures. These insights will be vital for practical design considerations of future nanoelectronic circuits.
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We demonstrate tunable transverse rectification in a density-modulated two-dimensional electron gas (2DEG). The density modulation is induced by two surface gates, running in parallel along a narrow stripe of 2DEG. A transverse voltage in the direction of the density modulation is observed, i.e. perpendicular to the applied source-drain voltage. The polarity of the transverse voltage is independent of the polarity of the source-drain voltage, demonstrating rectification in the device. We find that the transverse voltage $U_{y}$ depends quadratically on the applied source-drain voltage and non-monotonically on the density modulation. The experimental results are discussed in the framework of a diffusion thermopower model.
We have fabricated high-mobility, two-dimensional electron gases in a GaAs quantum well on cylindrical surfaces, which allows to investigate the magnetotransport behavior under varying magnetic fields along the current path. A strong asymmetry in the quantum Hall effect appears for measurements on both sides of the conductive path. We determined the strain at the position of the quantum well. We observe ballistic transport in 8-micrometers-wide collimating structures.
We report on a systematic investigation of the dominant scattering mechanism in shallow two-dimensional electron gases (2DEGs) formed in modulation-doped GaAs/Al_{x}Ga_{1-x}As heterostructures. The power-law exponent of the electron mobility versus density, mu propto n^{alpha}, is extracted as a function of the 2DEGs depth. When shallower than 130 nm from the surface, the power-law exponent of the 2DEG, as well as the mobility, drops from alpha simeq 1.65 (130 nm deep) to alpha simeq 1.3 (60 nm deep). Our results for shallow 2DEGs are consistent with theoretical expectations for scattering by remote dopants, in contrast to the mobility-limiting background charged impurities of deeper heterostructures.
We present thermopower $S$ and resistance $R$ measurements on GaAs-based mesoscopic two-dimensional electron gases (2DEGs) as functions of the electron density $n_s$. At high $n_s$ we observe good agreement between the measured $S$ and $S_{rm{MOTT}}$, the Mott prediction for a non-interacting metal. As $n_s$ is lowered, we observe a crossover from Mott-like behaviour to that where $S$ shows strong oscillations and even sign changes. Remarkably, there are absolutely no features in $R$ corresponding to those in $S$. In fact, $R$ is devoid of even any universal conductance fluctuations. A statistical analysis of the thermopower oscillations from two devices of dissimilar dimensions suggest a universal nature of the oscillations. We critically examine whether they can be mesoscopic fluctuations of the kind described by Lesovik and Khmelnitskii in Sov. Phys. JETP. textbf{67}, 957 (1988).
Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices.
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