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Register a new userEnhancement of the Anti-Damping Spin Torque Efficacy of Platinum by Interface Modification
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We report a strong enhancement of the efficacy of the spin Hall effect (SHE) of Pt for exerting anti-damping spin torque on an adjacent ferromagnetic layer by the insertion of $approx$ 0.5 nm layer of Hf between a Pt film and a thin, < 2 nm, Fe$_{60}$Co$_{20}$B$_{20}$ ferromagnetic layer. This enhancement is quantified by measurement of the switching current density when the ferromagnetic layer is the free electrode in a magnetic tunnel junction. The results are explained as the suppression of spin pumping through a substantial decrease in the effective spin-mixing conductance of the interface, but without a concomitant reduction of the ferromagnet s absorption of the SHE generated spin current.
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Spin transfer torque (STT) driven by a charge current plays a key role in magnetization switching in heavy-metal/ferromagnetic-metal structures. The STT efficiency defined by the ratio between the effective field due to STT and the current density, is required to be improved to reduce energy compulsions in the STT-based spintronic devices. In this work, using the harmonic Hall measurement method, we experimentally studied the STT efficiency in platinum(Pt)/FM structures as a function of the Pt thickness. We found that the STT efficiency strongly depends on the Pt thickness and reaches a maximum value of 4.259 mT/($10^6$A/$cm^{2}$) for the 1.8-nm-thickness Pt sample. This result indicates that competition between spin Hall effect (SHE) and Rashba effect as well as spin diffusion process across the Pt layer determines the Pt thickness for the maximum STT efficiency. We demonstrated the role played by the spin diffusion besides the spin current generation mechanisms in improvement of the STT efficiency, which is helpful in designing STT-based devices.
High spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with a ferromagnetic layer show promise for next generation magnetic memory and logic devices. SOTs generated from the in-plane spin polarization along y-axis originated by the spin Hall and Edelstein effects can switch magnetization collinear with the spin polarization in the absence of external magnetic fields. However, an external magnetic field is required to switch the magnetization along x and z-axes via SOT generated by y-spin polarization. Here, we present that the above limitation can be circumvented by unconventional SOT in magnetron-sputtered thin film MnPd3. In addition to the conventional in-plane anti-damping-like torque due to the y-spin polarization, out-of-plane and in-plane anti-damping-like torques originating from z-spin and x-spin polarizations, respectively have been observed at room temperature. The spin torque efficiency corresponding to the y-spin polarization from MnPd3 thin films grown on thermally oxidized silicon substrate and post annealed at 400 Deg C is 0.34 - 0.44. Remarkably, we have demonstrated complete external magnetic field-free switching of perpendicular Co layer via unconventional out-of-plane anti-damping-like torque from z-spin polarization. Based on the density functional theory calculations, we determine that the observed x- and z- spin polarizations with the in-plane charge current are due to the low symmetry of the (114) oriented MnPd3 thin films. Taken together, the new material reported here provides a path to realize a practical spin channel in ultrafast magnetic memory and logic devices.
An essential property of magnetic devices is the relaxation rate in magnetic switching which depends strongly on the damping in the magnetisation dynamics. It was recently measured that damping depends on the magnetic texture and, consequently, is a non-local quantity. The damping enters the Landau-Lifshitz-Gilbert equation as the phenomenological Gilbert damping parameter $alpha$, that does not, in a straight forward formulation, account for non-locality. Efforts were spent recently to obtain Gilbert damping from first principles for magnons of wave vector $mathbf{q}$. However, to the best of our knowledge, there is no report about real space non-local Gilbert damping $alpha_{ij}$. Here, a torque-torque correlation model based on a tight binding approach is applied to the bulk elemental itinerant magnets and it predicts significant off-site Gilbert damping contributions, that could be also negative. Supported by atomistic magnetisation dynamics simulations we reveal the importance of the non-local Gilbert damping in atomistic magnetisation dynamics. This study gives a deeper understanding of the dynamics of the magnetic moments and dissipation processes in real magnetic materials. Ways of manipulating non-local damping are explored, either by temperature, materials doping or strain.
Ion implantation of Fe and Mn into Al thin films was used for effective modification of Al superconductive properties. Critical temperature of the transition to superconducting state was found to decrease gradually with implanted Fe concentration. it was found that suppression by Mn implantation much stronger compared to Fe. At low concentrations of implanted ions, suppression of the critical temperature can be described with reasonable accuracy by existing models, while at concentrations above 0.1 at.% a pronounced discrepancy between the models and experiments is observed.
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $Delta V$ at the interface as high as 1.2mV for a current density of 0.34 nA.$mu m^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al$_2$O$_3$/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers travelling back into the ferromagnetic contact reproduces accurately the experimental results.
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