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Register a new userEnhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator
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We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2-xCrxSe3, via the proximity effect using a high-TC ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 K to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.
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Realizing axion insulator state with a uniform magnetization considerably facilitates experimental explorations of the intriguing topological magnetoelectric effect, a hallmark of three-dimensional (3D) topological insulators (TIs). Through density functional theory calculations and four-band model studies, we find that magnetic ions Cr3+ in monolayer CrI3 and Mn2+ in septuple-layer MnBi2Se4 have opposite exchange couplings to the topological surface states of 3D TI Bi2Se3. As an exciting result of such opposite exchange couplings, axion insulator state is realized by a uniform magnetization in CrI3/Bi2Se3/MnBi2Se4 heterostructure. Our work opens up opportunities for exploring topological magnetoelectric effect realized by the uniform magnetization induced axion insulator state in heterostructures of 3D TIs and two-dimensional van der Waals ferromagnetic insulators.
We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman method. Lattice structural characterizations by X-ray diffraction, scanning tunneling microscopy, and Raman spectroscopy confirmed the high quality of the as-grown single crystals. The topological surface states in the electronic band structure were directly re- vealed by angle-resolved photoemission spectroscopy. Transport measurements showed that the conduction was dominated by the bulk carriers and confirmed a previously observed bulk quantum Hall effect in such highly doped Bi2Se3 samples. We briefly discuss several possible strategies of reducing bulk conductance.
The interfacial Dzyaloshinskii-Moriya interaction (DMI) in multilayers of heavy metal and ferromagnetic metals enables the stabilization of novel chiral spin structures such as skyrmions. Magnetic insulators, on the other hand can exhibit enhanced dynamics and properties such as lower magnetic damping and therefore it is of interest to combine the properties enabled by interfacial DMI with insulating systems. Here, we demonstrate the presence of interfacial DMI in heterostructures that include insulating magnetic layers. We use a bilayer of perpendicularly magnetized insulating thulium iron garnet (TmIG) and the heavy metal platinum, and find a surprisingly strong interfacial DMI that, combined with spin-orbit torque results, in efficient switching. The interfacial origin is confirmed through thickness dependence measurements of the DMI, revealing the characteristic 1/thickness dependence with one order of magnitude longer decay length compared to metallic layers. We combine chiral spin structures and spin-orbit torques for efficient switching and identify skyrmions that allow us to establish the GGG/TmIG interface as the origin of the DMI.
We report the magnetic structure of room-temperature-stable, monoclinic Mn$_3$As$_2$ at 3 K and 250 K using neutron powder diffraction measurements. From magnetometry data, the Curie temperature of Mn$_3$As$_2$ was confirmed to be around 270 K. Calorimetry analysis showed the presence of another transition at 225 K. At 270 K, Mn$_3$As$_2$ undergoes a $k = 0$ ferrimagnetic ordering in the magnetic space group $C2/m$ (#12.58) with Mn moments pointing along $b$. Below 225 K, there is a canting of Mn moments in the $ac$ plane which produces a multi-$k$ non-collinear magnetic structure in space group $C2/c$ (#15.85). The components of Mn moments along $b$ follow $k=0$ ordering and the components along $a$ and $c$ have $k = [0 0 frac{1}{2}]$ propagation vector. The change in the magnetic ground state with temperature provides a deeper insight into the factors that govern magnetic ordering in Mn-As compounds.
In recent experiments, high Curie temperatures Tc above room temperature were reported in ferromagnetic semiconductors Fe-doped GaSb and InSb, while low Tc between 20 K to 90 K were observed in some other semiconductors with the same crystal structure, including Fe-doped InAs and Mn-doped GaSb, InSb, and InAs. Here we study systematically the origin of high temperature ferromagnetism in Fe, Mn, Cr-doped GaSb, InSb, and InAs magnetic semiconductors by combining the methods of density functional theory and quantum Monte Carlo. In the diluted impurity limit, the calculations show that the impurities Fe, Mn, and Cr have similar magnetic correlations in the same semiconductors. Our results suggest that high (low) Tc obtained in these experiments mainly comes from high (low) impurity concentrations. In addition, our calculations predict the ferromagnetic semiconductors of Cr-doped InSb, InAs, and GaSb that may have possibly high Tc. Our results show that the origin of high Tc in (Ga,Fe)Sb and (In,Fe)Sb is not due to the carrier induced mechanism because Fe3+ does not introduce carriers.
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