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Register a new userSpin-wave logic devices based on isotropic forward volume magneto-static waves
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We propose the utilization of isotropic forward volume magneto-static spin waves in modern wave-based logic devices and suggest a concrete design for a spin-wave majority gate operating with these waves. We demonstrate by numerical simulations that the proposed out-of-plane magnetized majority gate overcomes the limitations of anisotropic in-plane magnetized majority gates due to the high spin-wave transmission through the gate, which enables a reduced energy consumption of these devices. Moreover, the functionality of the out-of-plane majority gate is increased due to the lack of parasitic generation of short-wavelength exchange spin waves.
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An electric current controlled spin-wave logic gate based on a width-modulated dynamic magnonic crystal is realized. The device utilizes a spin-wave waveguide fabricated from a single-crystal Yttrium Iron Garnet film and two conducting wires attached to the film surface. Application of electric currents to the wires provides a means for dynamic control of the effective geometry of the waveguide and results in a suppression of the magnonic band gap. The performance of the magnonic crystal as an AND logic gate is demonstrated.
We discuss the influence of the magneto-coulomb effect (MCE) on the magnetoconductance of spin valve devices. We show that MCE can induce magnetoconductances of several per cents or more, dependent on the strength of the coulomb blockade. Furthermore, the MCE-induced magnetoconductance changes sign as a function of gate voltage. We emphasize the importance of separating conductance changes induced by MCE from those due to spin accumulation in spin valve devices.
Magnetic analogue of electronic gates are advantageous in many ways. There is no electron leakage, higher switching speed and more energy saving in a magnetic logic device compared to a semiconductor one. Recently, we proposed a magnetic vortex transistor and fan-out out devices based on carefully coupled magnetic vortices in isolated nanomagnetic disks. Here, we demonstrate a new type of magnetic logic gate based upon asymmetric vortex transistor by using micromagnetic simulation. Depending upon two main features (topology) of magnetic vortex, chirality and polarity, the network can behave like a tri-state buffer. Considering the asymmetric magnetic vortex Transistor as a unit, the logic gate has been formed where two such transistors are placed parallel and another one is placed at the output. Magnetic energy given in the input transistors is transferred to the output transistor with giant amplification, due to the movement of antivortex solitons through the magnetic stray field. The loss and gain of energy at the output transistor can be controlled only by manipulating the polarities of the middle vortices in input transistors. Due to the asymmetric energy transfer of the antivortex solitons, we have shown successful fan-in operation in this topologically symmetric system. A tri-state buffer gate with fan-in of two transistors can be formed. This gate can be used as a Switch to the logic circuit and it has technological importance for energy transfer to large scale vortex networks.
In the quest to develop spintronic logic, it was discovered that magnetoelectric switching results in lower energy and shorter switching time than other mechanisms. Magnetoelectric (ME) field due to exchange bias at the interface with a multi-ferroic (such as BiFeO3) is well suited for 180 degree switching of magnetization. The ME field is determined by the direction of canted magnetization in BiFeO3 which can point at an angle to the plane, to which voltage is applied. Dependence of switching time and the threshold of ME field on its angles was determined by micromagnetic simulations. Switching occurs by formation of a domain wall on the side of the nanomagnet on top of BFO and its propagation to the rest of the magnet. For in-plane magnetization, switching occurs over a wide range of angles and at all magnitudes of ME field above threshold. For out-of-plane magnetization failure occurs (with an exception of a narrow range of angles and magnitudes of ME field) due to the domain wall reflecting from the opposite end of the nanomagnet.
The dipolar (magnetostatic) interaction dominates the behavior of spin waves in magnetic films in the long-wavelength regime. In an in-plane magnetized film, volume modes exist with a negative group velocity (backward volume magnetostatic spin waves), in addition to the forward surface-localized mode (Damon-Eshbach). Inside the film of finite thickness $L$, the volume modes have a nontrivial spatial dependence, and their two-dimensional dispersion relations $omega(mathbf{k})$ can be calculated only numerically. We present explicit perturbative expressions for the profiles and frequencies of the volume modes, taking into account an in-plane applied field and uniaxial anisotropy, for the regimes $lVert mathbf{k}L rVert gg 1$ and $lVert mathbf{k}L rVert ll 1$, which together provide a good indication of the behavior of the modes for arbitrary wavevector $mathbf{k}$. Moreover, we derive a very accurate semianalytical expression for the dispersion relation $omega(mathbf{k})$ of the lowest-frequency mode that is straightforward to evaluate using standard numerical routines. Our results are useful to quickly interpret and control the excitation and propagation of spin waves in (opto-)magnetic experiments.
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