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Register a new user`Holographic treatment of surface disorder on a topological insulator
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The effect of surface disorder on electronic systems is particularly interesting for topological phases with surface and edge states. Using exact diagonalization, it has been demonstrated that the surface states of a 3D topological insulator survive strong surface disorder, and simply get pushed to a clean part of the bulk. Here we explore a new method which analytically eliminates the clean bulk, and reduces a $D$-dimensional problem to a Hamiltonian-diagonalization problem within the $(D-1)$-dimensional disordered surface. This dramatic reduction in complexity allows the analysis of significantly bigger systems than is possible with exact diagonalization. We use our method to analyze a 2D topological spin-Hall insulator with non-magnetic and magnetic edge impurities, and we calculate the probability density (or local density of states) of the zero-energy eigenstates as a function of edge-parallel momentum and layer index. Our analysis reveals that the system size needed to reach behavior in the thermodynamic limit increases with disorder. We also compute the edge conductance as a function of disorder strength, and chart a lower bound for the length scale marking the crossover to the thermodynamic limit.
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This paper details the investigation of the influence of different disorders in two-dimensional topological insulator systems. Unlike the phase transitions to topological Anderson insulator induced by normal Anderson disorder, a different physical picture arises when bond disorder is considered. Using Born approximation theory, an explanation is given as to why bond disorder plays a different role in phase transition than does Anderson disorder. By comparing phase diagrams, conductance, conductance fluctuations, and the localization length for systems with different types of disorder, a consistent conclusion is obtained. The results indicate that a topological Anderson insulator is dependent on the type of disorder. These results are important for the doping processes used in preparation of topological insulators.
We present numerical evidence that most two-dimensional surface states of a bulk topological superconductor (TSC) sit at an integer quantum Hall plateau transition. We study TSC surface states in class CI with quenched disorder. Low-energy (finite-energy) surface states were expected to be critically delocalized (Anderson localized). We confirm the low-energy picture, but find instead that finite-energy states are also delocalized, with universal statistics that are independent of the TSC winding number, and consistent with the spin quantum Hall plateau transition (percolation).
The protected surface conductivity of topological insulators, carried by ultra-relativistic Dirac fermions, is in high demand for the next generation of electronic devices. Progress in the unambiguous identification of this surface contribution and, in a second step, its control are needed to move forward. Here we demonstrate both, with a combined transport and spectroscopy study of high-quality single crystals and mesoscopic devices of the topological insulator TlBiSe2. We show how various external stimuli-from thermal radiation, via low-intensity light, to high-intensity laser pumping and current driving-can boost the surface contribution, thereby making it both unambiguously detectable and potentially exploitable for applications. Once switched on, the extra surface contribution is persistent, with lifetimes of hundreds of years at low temperatures. We understand this effect in terms of the well-known concept of surface charge accumulation via a Schottky barrier formation, and propose that the same mechanism underlies also the slow relaxations seen with spectroscopic probes in our and other materials, which might thus also be persistent. We expect our technique to be readily transferable to other materials and probes, thereby shedding light on unexplained slow relaxations in transport and beyond.
A higher-order topological insulator is a new concept of topological states of matter, which is characterized by the emergent boundary states whose dimensionality is lower by more than two compared with that of the bulk, and draws a considerable interest. Yet, its robustness against disorders is still unclear. Here we investigate a phase diagram of higher-order topological insulator phases in a breathing kagome model in the presence of disorders, by using a state-of-the-art machine learning technique. We find that the corner states survive against the finite strength of disorder potential as long as the energy gap is not closed, indicating the stability of the higher-order topological phases against the disorders.
The quest for nonequilibrium quantum phase transitions is often hampered by the tendency of driving and dissipation to give rise to an effective temperature, resulting in classical behavior. Could this be different when the dissipation is engineered to drive the system into a nontrivial quantum coherent steady state? In this work we shed light on this issue by studying the effect of disorder on recently-introduced dissipation-induced Chern topological states, and examining the eigenmodes of the Hermitian steady state density matrix or entanglement Hamiltonian. We find that, similarly to equilibrium, each Landau band has a single delocalized level near its center. However, using three different finite size scaling methods we show that the critical exponent $ u$ describing the divergence of the localization length upon approaching the delocalized state is significantly different from equilibrium if disorder is introduced into the non-dissipative part of the dynamics. This indicates a different type of nonequilibrium quantum critical universality class accessible in cold-atom experiments.
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