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Register a new userPhase diagram of disordered higher-order topological insulator: A machine learning study
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A higher-order topological insulator is a new concept of topological states of matter, which is characterized by the emergent boundary states whose dimensionality is lower by more than two compared with that of the bulk, and draws a considerable interest. Yet, its robustness against disorders is still unclear. Here we investigate a phase diagram of higher-order topological insulator phases in a breathing kagome model in the presence of disorders, by using a state-of-the-art machine learning technique. We find that the corner states survive against the finite strength of disorder potential as long as the energy gap is not closed, indicating the stability of the higher-order topological phases against the disorders.
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In this work, we study the disorder effects on the bulk-boundary correspondence of two-dimensional higher-order topological insulators (HOTIs). We concentrate on two cases: (i) bulk-corner correspondence, (ii) edge-corner correspondence. For the bulk-corner correspondence case, we demonstrate the existence of the mobility gaps and clarify the related topological invariant that characterizes the mobility gap. Furthermore, we find that, while the system preserves the bulk-corner correspondence in the presence of disorder, the corner states are protected by the mobility gap instead of the bulk gap. For the edge-corner correspondence case, we show that the bulk mobility gap and edge band gaps of HOTIs are no longer closed simultaneously. Therefore, a rich phase diagram is obtained, including various disorder-induced phase transition processes. Notably, a disorder-induced transition from the non-trivial to trivial phase is realized, distinguishing the HOTIs from the other topological states. Our results deepen the understanding of bulk-boundary correspondence and enrich the topological phase transitions of disordered HOTIs.
We study the disorder-induced phase transition of higher-order Weyl semimetals (HOWSMs) and the fate of the topological features of disordered HOWSMs. We obtain a global phase diagram of HOWSMs according to the scaling theory of Anderson localization. Specifically, a phase transition from the Weyl semimetal (WSM) to the HOWSM is uncovered, distinguishing the disordered HOWSMs from the traditional WSMs. Further, we confirm the robustness of Weyl-nodes for HOWSMs. Interestingly, the unique topological properties of HOWSMs show different behaviors: (i) the quantized quadrupole moment and the corresponding quantized charge of hinge states are fragile to weak disorder; (ii) the hinge states show moderate stability which enables the feasibility in experimental observation. Our study deepens the understanding of the topological nature of HOWSMs and paves a possible way to the characterization of such a phase in experiments.
We study the characterization and realization of higher-order topological Anderson insulator (HOTAI) in non-Hermitian systems, where the non-Hermitian mechanism ensures extra symmetries as well as gain and loss disorder.We illuminate that the quadrupole moment $Q_{xy}$ can be used as the real space topological invariant of non-Hermitian higher-order topological insulator (HOTI). Based on the biorthogonal bases and non-Hermitian symmetries, we prove that $Q_{xy}$ can be quantized to $0$ or $0.5$. Considering the disorder effect, we find the disorder-induced phase transition from normal insulator to non-Hermitian HOTAI. Furthermore, we elucidate that the real space topological invariant $Q_{xy}$ is also applicable for systems with the non-Hermitian skin effect. Our work enlightens the study of the combination of disorder and non-Hermitian HOTI.
We study coherent wave scattering through waveguides with a step-like surface disorder and find distinct enhancements in the reflection coefficients at well-defined resonance values. Based on detailed numerical and analytical calculations, we can unambiguously identify the origin of these reflection resonances to be higher-order correlations in the surface disorder profile which are typically neglected in similar studies of the same system. A remarkable feature of this new effect is that it relies on the longitudinal correlations in the step profile, although individual step heights are random and thus completely uncorrelated. The corresponding resonances are very pronounced and robust with respect to ensemble averaging, and lead to an enhancement of wave reflection by more than one order of magnitude.
The quantum phase transition between two clean, non interacting topologically distinct gapped states in three dimensions is governed by a massless Dirac fermion fixed point, irrespective of the underlying symmetry class, and this constitutes a remarkably simple example of superuniversality. For a sufficiently weak disorder strength, we show that the massless Dirac fixed point is at the heart of the robustness of superuniversality. We establish this by considering both perturbative and nonperturbative effects of disorder. The superuniversality breaks down at a critical strength of disorder, beyond which the topologically distinct localized phases become separated by a delocalized diffusive phase. In the global phase diagram, the disorder controlled fixed point where superuniversality is lost, serves as a multicritical point, where the delocalized diffusive and two topologically distinct localized phases meet and the nature of the localization-delocalization transition depends on the underlying symmetry class. Based on these features we construct the global phase diagrams of noninteracting, dirty topological systems in three dimensions. We also establish a similar structure of the phase diagram and the superuniversality for weak disorder in higher spatial dimensions. By noting that $1/r^2$ power-law correlated disorder acts as a marginal perturbation for massless Dirac fermion in any spatial dimension $d$, we have established a general renormalization group framework for addressing disorder driven critical phenomena for fixed spatial dimension $d > 2$.
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