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Register a new userPossible mechanisms of electronic phase separation in oxide interfaces
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LaAlO3/SrTiO3 ad LaTiO3/SrTiO3 interfaces are known to host a strongly inhomogeneous (nearly) two-dimensional electron gas (2DEG). In this work we present three unconventional electronic mechanisms of electronic phase separation (EPS) in a 2DEG as a possible source of inhomogeneity in oxide interfaces. Common to all three mechanisms is the dependence of some (interaction) potential on the 2DEGs density. We first consider a mechanism resulting from a sizable density-dependent Rashba spin-orbit coupling. Next, we point out that an EPS may also occur in the case of a density-dependent superconducting pairing interaction. Finally, we show that the confinement of the 2DEG to the interface by a density-dependent, self-consistent electrostatic potential can by itself cause an EPS.
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Oxide heterostructures are of great interest both for fundamental and applicative reasons. In particular the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ or LaTiO$_3$/SrTiO$_3$ interfaces displays many different physical properties and functionalities. However there are clear indications that the interface electronic state is strongly inhomogeneous and therefore it is crucially relevant to investigate possible intrinsic electronic mechanisms underlying this inhomogeneity. Here the electrostatic potential confining the electron gas at the interface is calculated self-consistently, finding that the electron confinement at the interface may induce phase separation, to avoid a thermodynamically unstable state with a negative compressibility. This provides a generic robust and intrinsic mechanism for the experimentally observed inhomogeneous character of these interfaces.
By using a realist microscopic model, we study the electric and magnetic properties of the interface between a half metallic manganite and an insulator. We find that the lack of carriers at the interface debilitates the double exchange mechanism, weakening the ferromagnetic coupling between the Mn ions. In this situation the ferromagnetic order of the Mn spins near the interface is unstable against antiferromagnetic CE correlations, and a separation between ferromagnetic/metallic and antiferromagnetic/insulator phases at the interfaces can occur. We obtain that the insertion of extra layers of undoped manganite at the interface introduces extra carriers which reinforce the double exchange mechanism and suppress antiferromagnetic instabilities.
Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these systems the MIT is usually tuned by electron doping or by applying an external pressure. However, it was noted recently that a Mott insulator should also be sensitive to other external perturbations such as an electric field. We report here the first experimental evidence of a non-volatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4Se8. Our Scanning Tunneling Microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer scale Electronic Phase Separation (EPS) generated in the bulk material.
Of the two stable forms of graphite, hexagonal (HG) and rhombohedral (RG), the former is more common and has been studied extensively. RG is less stable, which so far precluded its detailed investigation, despite many theoretical predictions about the abundance of exotic interaction-induced physics. Advances in van der Waals heterostructure technology have now allowed us to make high-quality RG films up to 50 graphene layers thick and study their transport properties. We find that the bulk electronic states in such RG are gapped and, at low temperatures, electron transport is dominated by surface states. Because of topological protection, the surface states are robust and of high quality, allowing the observation of the quantum Hall effect, where RG exhibits phase transitions between gapless semimetallic phase and gapped quantum spin Hall phase with giant Berry curvature. An energy gap can also be opened in the surface states by breaking their inversion symmetry via applying a perpendicular electric field. Moreover, in RG films thinner than 4 nm, a gap is present even without an external electric field. This spontaneous gap opening shows pronounced hysteresis and other signatures characteristic of electronic phase separation, which we attribute to emergence of strongly-correlated electronic surface states.
We study the influence of superconducting correlations on the electronic specific heat in a diffusive superconductor-normal metal-superconductor Josephson junction. We present a description of this system in the framework of the diffusive-limit Greens function theory, taking into account finite temperatures, phase difference as well as junction parameters. We find that proximity effect may lead to a substantial deviation of the specific heat as compared to that in the normal state, and that it can be largely tuned in magnitude by changing the phase difference between the superconductors. A measurement setup to confirm these predictions is also suggested.
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