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Register a new userElectrical manipulation of orbital occupancy and magnetic anisotropy in manganites
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Electrical manipulation of lattice, charge, and spin has been realized respectively by the piezoelectric effect, field-effect transistor, and electric field control of ferromagnetism, bringing about dramatic promotions both in fundamental research and industrial production. However, it is generally accepted that the orbital of materials are impossible to be altered once they have been made. Here we use electric-field to dynamically tune the electronic phase transition in (La,Sr)MnO3 films with different Mn^4+/(Mn^3+ + Mn^4+) ratios. The orbital occupancy and corresponding magnetic anisotropy of these thin films are manipulated by gate voltage in a reversible and quantitative manner. Positive gate voltage increases the proportion of occupancy of the orbital and magnetic anisotropy that were initially favored by strain (irrespective of tensile and compressive), while negative gate voltage reduces the concomitant preferential orbital occupancy and magnetic anisotropy. Besides its fundamental significance in orbital physics, our findings might advance the process towards practical oxide-electronics based on orbital.
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We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we quantify the magnetic anisotropy as a function of the voltage V_p applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. We find that the easy axis of the strain-induced uniaxial magnetic anisotropy contribution can be inverted from the [110] to the [1-10] direction via the application of appropriate voltages V_p. At T=5K the magnetoelastic term is a minor contribution to the magnetic anisotropy. Nevertheless, we show that the switching fields of rho(H) loops are shifted as a function of V_p at this temperature. At 50K - where the magnetoelastic term dominates the magnetic anisotropy - we are able to tune the magnetization orientation by about 70 degree solely by means of the electrical voltage V_p applied. Furthermore, we derive the magnetostrictive constant lambda_111 as a function of temperature and find values consistent with earlier results. We argue that the piezo-voltage control of magnetization orientation is directly transferable to other ferromagnetic/piezoelectric hybrid structures, paving the way to innovative multifunctional device concepts. As an example, we demonstrate piezo-voltage induced irreversible magnetization switching at T=40K, which constitutes the basic principle of a nonvolatile memory element.
We have performed electrical resistivity and DC magnetization measurements as a function of temperature, on polycrystalline samples of phase separated LaPrCaMnO. We have used the General Effective Medium Theory to obtain theoretical resistivity vs. temperature curves corresponding to different fixed ferromagnetic volume fraction values, assuming that the sample is a mixture of typical metallic like and insulating manganites. By comparing this data with our experimental resistivity curves we have obtained the relative ferromagnetic volume fraction of our sample as a function of temperature. This result matches with the corresponding magnetization data in excellent agreement, showing that a mixed phase scenario is the key element to explain both the magnetic and transport properties in the present compound.
Electrical manipulation of emergent phenomena due to nontrivial band topology is a key to realize next-generation technology using topological protection. A Weyl semimetal is a three-dimensional gapless system that hosts Weyl fermions as low-energy quasiparticles. It exhibits various exotic phenomena such as large anomalous Hall effect (AHE) and chiral anomaly, which have robust properties due to the topologically protected Weyl nodes. To manipulate such phenomena, the magnetic version of Weyl semimetals would be useful as a magnetic texture may provide a handle for controlling the locations of Weyl nodes in the Brillouin zone. Moreover, given the prospects of antiferromagnetic (AF) spintronics for realizing high-density devices with ultrafast operation, it would be ideal if one could electrically manipulate an AF Weyl metal. However, no report has appeared on the electrical manipulation of a Weyl metal. Here we demonstrate the electrical switching of a topological AF state and its detection by AHE at room temperature. In particular, we employ a polycrystalline thin film of the AF Weyl metal Mn$_3$Sn, which exhibits zero-field AHE. Using the bilayer device of Mn$_3$Sn and nonmagnetic metals (NMs), we find that an electrical current density of $sim 10^{10}$-$10^{11}$ A/m$^2$ in NMs induces the magnetic switching with a large change in Hall voltage, and besides, the current polarity along a bias field and the sign of the spin Hall angle $theta_{rm SH}$ of NMs [Pt ($theta_{rm SH} > 0$), Cu($theta_{rm SH} sim 0$), W ($theta_{rm SH} < 0$)] determines the sign of the Hall voltage. Notably, the electrical switching in the antiferromagnet is made using the same protocol as the one used for ferromagnetic metals. Our observation may well lead to another leap in science and technology for topological magnetism and AF spintronics.
Titanium disulfide TiS$_2$, which is a member of the layered transition-metal dichalcogenides with the 1T-CdI$_2$-type crystal structure, is known to exhibit a wide variety of magnetism through intercalating various kinds of transition-metal atoms of different concentrations. Among them, Fe-intercalated titanium disulfide Fe$_x$TiS$_2$ is known to be ferromagnetic with strong perpendicular magnetic anisotropy (PMA) and large coercive fields ($H_text{c}$). In order to study the microscopic origin of the magnetism of this compound, we have performed X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) measurements on single crystals of heavily intercalated Fe$_x$TiS$_2$ ($xsim0.5$). The grown single crystals showed a strong PMA with a large $H_text{c}$ of $mu_0H_text{c} simeq 1.0 text{T}$. XAS and XMCD spectra showed that Fe is fully in the valence states of 2+ and that Ti is in an itinerant electronic state, indicating electron transfer from the intercalated Fe atoms to the host TiS$_2$ bands. The Fe$^{2+}$ ions were shown to have a large orbital magnetic moment of $simeq 0.59 mu_text{B}text{/Fe}$, to which, combined with the spin-orbit interaction and the trigonal crystal field, we attribute the strong magnetic anisotropy of Fe$_x$TiS$_2$.
We report the experimental observation of strong electrical magneto-chiral anistropy (eMChA) in trigonal tellurium (t-Te) crystals. We introduce the tensorial character of the effect and determine several tensor elements and we propose a novel intrinsic bandstructure-based mechanism for eMChA which gives a reasonable description of the principal results.
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