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Register a new userTunable Charge and Spin Order in PrNiO$_3$ Thin Films and Superlattices
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We have used polarized Raman scattering to probe lattice vibrations and charge ordering in 12 nm thick, epitaxially strained PrNiO$_3$ films, and in superlattices of PrNiO$_3$ with the band-insulator PrAlO$_3$. A carefully adjusted confocal geometry was used to eliminate the substrate contribution to the Raman spectra. In films and superlattices under tensile strain, which undergo a metal-insulator transition upon cooling, the Raman spectra reveal phonon modes characteristic of charge ordering. These anomalous phonons do not appear in compressively strained films, which remain metallic at all temperatures. For superlattices under compressive strain, the Raman spectra show no evidence of anomalous phonons indicative of charge ordering, while complementary resonant x-ray scattering experiments reveal antiferromagnetic order associated with a modest increase in resistivity upon cooling. This confirms theoretical predictions of a spin density wave phase driven by spatial confinement of the conduction electrons.
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The 2D electron gas (2DEG) formed at the surface of SrTiO$_3$(001) has attracted great interest because of its fascinating physical properties and potential as a novel electronic platform, but up to now has eluded a comprehensible way to tune its properties. Using angle-resolved photoemission spectroscopy with and without spin detection we here show that the band filling can be controlled by growing thin SrTiO$_3$ films on Nb doped SrTiO$_3$(001) substrates. This results in a single spin-polarised 2D Fermi surface, which bears potential as platform for Majorana physics. Based on our results it can furthermore be concluded that the 2DEG does not extend more than 2 unit cells into the film and that its properties depend on the amount of SrO$_x$ at the surface and possibly the dielectric response of the system.
The spin states of Co$^{3+}$ ions in perovskite-type LaCoO$_3$, governed by complex interplay between the electron-lattice interactions and the strong electron correlations, still remain controversial due to the lack of experimental techniques which can detect directly. In this letter, we revealed the tensile-strain dependence of spin states, $i. e.$ the ratio of the high- and low-spin states, in epitaxial thin films and a bulk crystal of LaCoO$_3$ via resonant inelastic soft x-ray scattering. The tensile-strain as small as 1.0% was found to realize different spin states from that in the bulk.
We report a modulation of the in-plane magnetotransport in artificial manganite superlattice (SL) [(NdMnO3)n /(SrMnO3)n /(LaMnO3)n]m by varying the layer thickness n while keeping the total thickness of the structure constant. Charge transport in these heterostructures is confined to the interfaces and occurs via variable range hopping (VRH). Upon increasing n, the interfacial separation rises, leading to a suppression of the electrostatic screening between carriers of neighboring interfaces and the opening of a Coulomb gap at the Fermi level (EF). The high-field magnetoresistance (MR) is universally negative due to progressive spin alignment. However at a critical thickness of n=5 unit cells (u.c.), an exchange field coupling between ferromagnetically ordered interfaces results in positive MR at low magnetic field (H). Our results demonstrate the ability to geometrically tune the electrical transport between regimes dominated by either charge or spin correlations.
Van der Waals moire materials have emerged as a highly controllable platform to study the electronic correlation phenomena. In particular, robust correlated insulating states have recently been discovered at both integer and fractional filling factors of the semiconductor moire systems. Here, we reveal the thermodynamic properties of these states by measuring the gate capacitance of MoSe2/WS2 moire superlattices. We observe a series of incompressible states for filling factor 0 - 8 and anomalously large capacitance (nearly 60% above the devices geometrical capacitance) in the intervening compressible regions. The anomalously large capacitance is most pronounced at small filling factor, below the melting temperature of the charge-ordered states, and for small sample-gate separation. It is a manifestation of the device-geometry-dependent Coulomb interaction between electrons and phase mixing of the charge-ordered states. We have further extracted the thermodynamic gap of the correlated insulating states and the entropy of the capacitive device. The results not only establish capacitance as a powerful probe of the correlated states in semiconductor moire systems, but also demonstrate control of the extended Coulomb interaction in these materials via sample-gate coupling.
We present THz measurements of thin films of mixed-valent YbAl$_3$ and its structural analogue LuAl$_3$. Combined with traditional Fourier transform infrared (FTIR) spectroscopy, the extended Drude formalism is utilized to study the low-frequency transport of these materials. We find that LuAl$_3$ demonstrates conventional Drude transport whereas at low temperatures YbAl$_3$ demonstrates a sharply renormalized Drude peak and a mid-infrared (MIR) peak in the conductivity, indicative of the formation of a heavy Fermi liquid. In YbAl$_3$ the extended Drude framework shows a consistency of the scattering rate with Fermi-liquid behavior below $T < 40$ K and a moderate mass enhancement. While a $omega^2$ Fermi liquid-like frequency dependence is not clearly exhibited, the temperature dependence of the Drude scattering rate and effective mass is consistent with the formation of a low-temperature moderately heavy Fermi liquid, albeit one with a smaller mass than observed in single crystals. The extended Drude analysis also supports a slow crossover between the Fermi liquid state and the normal state in YbAl$_3$.
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