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Using electrical transport experiments and shot noise thermometry, we investigate electron-phonon heat transfer rate in a suspended bilayer graphene. Contrary to monolayer graphene with heat flow via three-body supercollision scattering, we find that regular electron - optical phonon scattering in bilayer graphene provides the dominant scattering process at electron energies $ gtrsim 0.15$ eV. We determine the strength of these intrinsic heat flow processes of bilayer graphene and find good agreement with theoretical estimates when both zone edge and zone center optical phonons are taken into account.
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Using electrical transport experiments and shot noise thermometry, we find strong evidence that supercollision scattering processes by flexural modes are the dominant electron-phonon energy transfer mechanism in high-quality, suspended graphene around room temperature. The power law dependence of the electron-phonon coupling changes from cubic to quintic with temperature. The change of the temperature exponent by two is reflected in the quadratic dependence on chemical potential, which is an inherent feature of two-phonon quantum processes.
The relative twist angle in heterostructures of two-dimensional (2D) materials with similar lattice constants result in a dramatic alteration of the electronic properties. Here, we investigate the electrical and magnetotransport properties in bilayer graphene (BLG) encapsulated between two hexagonal boron nitride (hBN) crystals, where the top and bottom hBN are rotationally aligned with bilayer graphene with a twist angle $theta_tsim 0^{circ} text{and}~ theta_b < 1^{circ}$, respectively. This results in the formation of two moire superlattices, with the appearance of satellite resistivity peaks at carrier densities $n_{s1}$ and $n_{s2}$, in both hole and electron doped regions, together with the resistivity peak at zero carrier density. Furthermore, we measure the temperature(T) dependence of the resistivity ($rho$). The resistivity shows a linear increment with temperature within the range 10K to 50K for the density regime $n_{s1} <n<n_{s2}$ with a large slope d$rho$/dT $sim$ 8.5~$Omega$/K. The large slope of d$rho$/dT is attributed to the enhanced electron-phonon coupling arising due to the suppression of Fermi velocity in the reconstructed minibands, which was theoretically predicted, recently in doubly aligned graphene with top and bottom hBN. Our result establishes the uniqueness of doubly aligned moire system to tune the strength of electron-phonon coupling and to modify the electronic properties of multilayered heterostructures.
A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and anti-symmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry breaking. The phonon hardening and softening are explained by considering the selective coupling of the S and AS phonons with interband and intraband electron-hole pairs.
We report the first temperature dependent phonon transport measurements in suspended Cu-CVD single layer graphene (SLG) from 15K to 380K using microfabricated suspended devices. The thermal conductance per unit cross section $sigma$/A increases with temperature and exhibits a peak near T~280K ($pm$10K) due to the Umklapp process. At low temperatures (T<140K), the temperature dependent thermal conductivity scales as ~T^{1.5}, suggesting that the main contribution to thermal conductance arises from flexural acoustic (ZA) phonons in suspended SLG. The $sigma$/A reaches a high value of 1.7$times10^5 T^{1.5}$ W/m^2K, which is approaching the expected ballistic phonon thermal conductance for two-dimensional graphene sheets. Our results not only clarify the ambiguity in the thermal conductance, but also demonstrate the potential of Cu-CVD graphene for heat related applications.
Recent experiments have shown surprisingly large thermal time constants in suspended graphene ranging from 10 to 100 ns in drums with a diameter ranging from 2 to 7 microns. The large time constants and their scaling with diameter points towards a thermal resistance at the edge of the drum. However, an explanation of the microscopic origin of this resistance is lacking. Here, we show how phonon scattering at a kink in the graphene, e.g. formed by sidewall adhesion at the edge of the suspended membrane, can cause a large thermal time constant. This kink strongly limits the fraction of flexural phonons that cross the suspended graphene edge, which causes a thermal interface resistance at its boundary. Our model predicts thermal time constants that are of the same order of magnitude as experimental data, and shows a similar dependence on the circumference. Furthermore, the model predicts the relative in-plane and out-of-plane phonon contributions to graphenes thermal expansion force, in agreement with experiments. We thus show, that in contrast to conventional thermal (Kapitza) resistance which occurs between two different materials, in 2D materials another type of thermal interface resistance can be geometrically induced in a single material.
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