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Register a new userObservation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene
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A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and anti-symmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry breaking. The phonon hardening and softening are explained by considering the selective coupling of the S and AS phonons with interband and intraband electron-hole pairs.
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The interaction of electron-hole pairs with lattice vibrations exhibits a wealth of intriguing physical phenomena. The Kohn anomaly is a renowned example where electron-phonon coupling leads to non-analytic phonon dispersion at specific momentum nesting the Fermi surface. Here we report evidence of another type of phonon anomaly discovered by low temperature Raman spectroscopy in bilayer graphene where the charge density is modulated by the electric field effect. This anomaly, arising from charge-tunable modulations of particle-hole pairs that are resonantly coupled to lattice vibrations, is predicted to exhibit a logarithmic divergence in the long-wavelength optical-phonon energy. In a non-uniform bilayer of graphene, the logarithmic divergence is abated by charge density inhomogeneity leaving as a vestige an anomalous phonon softening. The observed softening marks the first confirmation of the phonon anomaly as a key signature of the resonant deformation-potential electron-phonon coupling. The high sensitivity of the phonon softening to charge density non-uniformity creates significant venues to explore the interplay between fundamental interactions and disorder in the atomic layers.
Using electrical transport experiments and shot noise thermometry, we investigate electron-phonon heat transfer rate in a suspended bilayer graphene. Contrary to monolayer graphene with heat flow via three-body supercollision scattering, we find that regular electron - optical phonon scattering in bilayer graphene provides the dominant scattering process at electron energies $ gtrsim 0.15$ eV. We determine the strength of these intrinsic heat flow processes of bilayer graphene and find good agreement with theoretical estimates when both zone edge and zone center optical phonons are taken into account.
We analyze the response of bilayer graphene to an external transverse electric field using a variational method. A previous attempt to do so in a recent paper by Falkovsky [Phys. Rev. B 80, 113413 (2009)] is shown to be flawed. Our calculation reaffirms the original results obtained by one of us [E. McCann, Phys. Rev. B 74, 161403(R) (2006)] by a different method. Finally, we generalize these original results to describe a dual-gated bilayer graphene device.
The effects of Coulomb interactions on the electronic properties of bilayer graphene nanoribbons (BGNs) covered by a gate electrode are studied theoretically. The electron density distribution and the potential profile are calculated self-consistently within the Hartree approximation. A comparison to their single-particle counterparts reveals the effects of interactions and screening. Due to the finite width of the nanoribbon in combination with electronic repulsion, the gate-induced electrons tend to accumulate along the BGN edges where the potential assumes a sharp triangular shape. This has a profound effect on the energy gap between electron and hole bands, which depends nonmonotonously on the gate voltage and collapses at intermediate electric fields. We interpret this behavior in terms of interaction-induced warping of the energy dispersion.
Gated bilayer graphene exhibits spin-degenerate gapless states with a topological character localized at stacking domain walls. These states allow for one-dimensional currents along the domain walls. We herein demonstrate that these topologically protected currents are spin -polarized and locked in a single layer when bilayer graphene contains stacking domain walls decorated with magnetic defects. The magnetic defects, which we model as {pi}-vacancies, perturb the topological states but also lift their spin degeneracy. One gapless state survives the perturbation of these defects, and its spin polarization is largely localized in one layer. The spin-polarized current in the topological state flows in a single layer, and this finding suggests the possibility of effectively exploiting these states in spintronic applications.
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