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Register a new userAccessing defect dynamics using intense, nanosecond pulsed ion beams
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Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical models and simulations. We show preliminary results from experiments at the new Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory that will enable in-situ access to defect dynamics through pump-probe experiments. Here, the unique capabilities of the NDCX-II accelerator to generate intense, nanosecond pulsed ion beams are utilized. Preliminary data of channeling experiments using lithium and potassium ions and silicon membranes are shown. We compare these data to simulation results using Crystal Trim. Furthermore, we discuss the improvements to the accelerator to higher performance levels and the new diagnostics tools that are being incorporated.
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A novel, induction type linear accelerator, the Neutralized Drift Compression eXperiment (NDCX-II), is currently being commissioned at Berkeley Lab. This accelerator is designed to deliver intense (up to 3x1011 ions/pulse), 0.6 to ~600 ns duration pulses of 0.13 to 1.2 MeV lithium ions at a rate of about 2 pulses per minute onto 1 to 10 mm scale target areas. When focused to mm-diameter spots, the beam is predicted to volumetrically heat micrometer thick foils to temperatures of ~30,000 K. At lower beam power densities, the short excitation pulse with tunable intensity and time profile enables pump-probe type studies of defect dynamics in a broad range of materials. We briefly describe the accelerator concept and design, present results from beam pulse shaping experiments and discuss examples of pump-probe type studies of defect dynamics following irradiation of materials with intense, short ion beam pulses from NDCX-II.
Intense, pulsed ion beams locally heat materials and deliver dense electronic excitations that can induce materials modifications and phase transitions. Materials properties can potentially be stabilized by rapid quenching. Pulsed ion beams with (sub-) ns pulse lengths have recently become available for materials processing. Here, we optimize mask geometries for local modification of materials by intense ion pulses. The goal is to rapidly excite targets volumetrically to the point where a phase transition or local lattice reconstruction is induced followed by rapid cooling that stabilizes desired materials properties fast enough before the target is altered or damaged by e. g. hydrodynamic expansion. We performed HYDRA simulations that calculate peak temperatures for a series of excitation conditions and cooling rates of silicon targets with micro-structured masks and compare these to a simple analytical model. The model gives scaling laws that can guide the design of targets over a wide range of pulsed ion beam parameters.
Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity in EC is so fast that a diffusion-less crystallization can be expected. In the contacts of advanced transistors, the active level at the metal/semiconductor Schottky interface must be very high to achieve a sub-10^{-9} ohm.cm2 contact resistivity, which has been already demonstrated by using the dopant surface segregation induced by MLA. However, the beneficial layer of a few nanometers at the surface may be easily consumed during subsequent contact cleaning and metallization. EC helps to address such kind of process integration issues, enabling the optimal positioning of the peak of the dopant chemical profile. However, there is a lack of experimental studies of EC in heavily-doped semiconductor materials. Furthermore, to the best of our knowledge, dopant activation by EC has never been experimentally reported. In this paper, we present dopant redistribution and activation by an EC process induced by UV nanosecond-pulsed MLA in heavily gallium (Ga) ion-implanted high Ge content SiGe. Based on the obtained results, we also highlight potential issues of integrating EC into real device fabrication processes and discuss how to manage them.
Wires of sp-hybridized carbon atoms are attracting interest for both fundamental aspects of carbon science and for their appealing functional properties. The synthesis by physical vapor deposition has been reported to provide sp-rich carbon films but still needs to be further developed and understood in detail. Here the synthesis of carbon-atom wires (CAWs) has been achieved by nanosecond pulsed laser deposition (PLD) expoliting the strong out-of-equilibrium conditions occurring when the ablation plasma is confined in a background gas. Surface Enhnaced Raman scattering (SERS) spectra of deposited films indicates that CAWs are mixed with a mainly $sp^2$ amorphous carbon in a $sp-sp^2$ hybrid material. Optimal conditions for the deposition of sp-carbon phase have been investigated by changing deposition parameters thus suggesting basic mechanisms of carbon wires formation. Our proof-of-concept may open new perspectives for the targeted fabrication of CAWs and $sp-sp^2$ structures.
We present an overview of the performance of the Neutralized Drift Compression Experiment-II (NDCX-II) accelerator at Berkeley Lab, and summarize recent studies of material properties created with nanosecond and millimeter-scale ion beam pulses. The scientific topics being explored include the dynamics of ion induced damage in materials, materials synthesis far from equilibrium, warm dense matter and intense beam-plasma physics. We summarize the improved accelerator performance, diagnostics and results of beam-induced irradiation of thin samples of, e.g., tin and silicon. Bunches with over 3x10^10 ions, 1- mm radius, and 2-30 ns FWHM duration have been created. To achieve these short pulse durations and mm-scale focal spot radii, the 1.2 MeV He+ ion beam is neutralized in a drift compression section which removes the space charge defocusing effect during final compression and focusing. Quantitative comparison of detailed particle-in-cell simulations with the experiment play an important role in optimizing accelerator performance; these keep pace with the accelerator repetition rate of ~1/minute.
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