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A Model for Two-Channel Kondo Effect in CNT Quantum Dot

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 Added by Yshai Avishai
 Publication date 2014
  fields Physics
and research's language is English




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Over-screened Kondo effect is feasible in carbon nanotube quantum dot junction hosting a spin $tfrac{1}{2}$ atom with single $s$-wave valence electron (e.g Au). The idea is to use the two valleys as two symmetry protected flavor quantum numbers $xi={bf K}, {bf K}$. Perturbative RG analysis exposes the finite weak-coupling two-channel fixed point, where the Kondo temperature is estimated to be around $0.5div5$~K. Remarkably, occurrence of two different scaling regimes implies a non-monotonic dependence of the conductance as function of temperature.



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356 - K. Kikoin , Y. Oreg 2006
We study the possibility to observe the two channel Kondo physics in multiple quantum dot heterostructures in the presence of magnetic field. We show that a fine tuning of the coupling parameters of the system and an external magnetic field may stabilize the two channel Kondo critical point. We make predictions for behavior of the scaling of the differential conductance in the vicinity of the quantum critical point, as a function of magnetic field, temperature and source-drain potential.
We study the Kondo effect in a CNT(left lead)-CNT(QD)-CNT(right lead) structure. Here CNT is a single-wall metallic carbon nanotube, for which 1) the valence and conduction bands of electrons with zero orbital angular momentum ($m=0$) coalesc at the two valley points ${bf{K}}$ and ${bf{K}}$ of the first Brillouin zone and 2) the energy spectrum of electrons with $m e 0$ has a gap whose size is proportional to $|m|$. Following adsorption of hydrogen atoms and application of an appropriately designed gate potential, electron energy levels in the CNT(QD) are tunable to have: 1) two-fold spin degeneracy; 2) two-fold isospin (valley) degeneracy; 3) three-fold orbital degeneracy $m=0,pm1$. As a result, an SU(12) Kondo effect is realized with remarkably high Kondo temperature. Unlike the SU(2) case, the low temperature conductance and magnetic susceptibility have a peak at finite temperature. Moreover, the magnetic susceptibilities for parallel and perpendicular magnetic fields (WRT the tube axis) display anisotropy with a universal ratio $chi_{rm{imp}}^parallel / chi_{rm{imp}}^perp=eta$ that depends only on the electrons orbital and spin $g$ factors.
We calculate the conductance through a single quantum dot coupled to metallic leads, modeled by the spin 1/2 Anderson model. We adopt the finite-U extension of the noncrossing approximation method. Our results are in good agreement with exact numerical renormalization group results both in the high temperature and in the Kondo (low temperature) regime. Thanks to this approach, we were able to fit fairly well recently reported measurements by S. De Franceschi et al. in a quantum dot device. We show that, contrarily to what previously suggested, the conductance of this particular device can be understood within the spin-1/2 Anderson model, in which the effects of the multilevel structure of the dot are neglected.
Phonon-assisted electronic tunnelings through a vibrating quantum dot embedded between normal and superconducting leads are studied in the Kondo regime. In such a hybrid device, with the bias applied to the normal lead, we find a series of Kondo sidebands separated by half a phonon energy in the differential conductance, which are distinct from the phonon-assisted sidebands previously observed in the conventional Andreev tunnelings and in systems with only normal leads. These Kondo sidebands originate from the Kondo-Andreev cooperative cotunneling mediated by phonons, which exhibit a novel Kondo transport behavior due to the interplay of the Kondo effect, the Andreev tunnelings, and the mechanical vibrations. Our result could be observed in a recent experiment setup [J. Gramich emph{et al.}, PRL textbf{115}, 216801 (2015)], provided that their carbon nanotube device reaches the Kondo regime at low temperatures.
The tunneling conductance is calculated as a function of the gate voltage in wide temperature range for the single quantum dot systems with Coulomb interaction. We assume that two orbitals are active for the tunneling process. We show that the Kondo temperature for each orbital channel can be largely different. The tunneling through the Kondo resonance almost fully develops in the region $T lsim 0.1 T_{K}^{*} sim 0.2 T_{K}^{*}$, where $T_{K}^{*}$ is the lowest Kondo temperature when the gate voltage is varied. At high temperatures the conductance changes to the usual Coulomb oscillations type. In the intermediate temperature region, the degree of the coherency of each orbital channel is different, so strange behaviors of the conductance can appear. For example, the conductance once increases and then decreases with temperature decreasing when it is suppressed at T=0 by the interference cancellation between different channels. The interaction effects in the quantum dot systems lead the sensitivities of the conductance to the temperature and to the gate voltage.
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