Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userUltrafast electronic read-out of diamond NV centers coupled to graphene
151
0
0.0
(
0
)
Authors
Andreas Brenneis
Ask ChatGPT about the research
No Arabic abstract
Nonradiative transfer processes are often regarded as loss channels for an optical emitter1, since they are inherently difficult to be experimentally accessed. Recently, it has been shown that emitters, such as fluorophores and nitrogen vacancy centers in diamond, can exhibit a strong nonradiative energy transfer to graphene. So far, the energy of the transferred electronic excitations has been considered to be lost within the electron bath of the graphene. Here, we demonstrate that the trans-ferred excitations can be read-out by detecting corresponding currents with picosecond time resolution. We electrically detect the spin of nitrogen vacancy centers in diamond electronically and con-trol the nonradiative transfer to graphene by electron spin resonance. Our results open the avenue for incorporating nitrogen vacancy centers as spin qubits into ultrafast electronic circuits and for harvesting non-radiative transfer processes electronically.
rate research
Read More
Using pulsed photoionization the coherent spin manipulation and echo formation of ensembles of NV- centers in diamond are detected electrically realizing contrasts of up to 17 %. The underlying spin-dependent ionization dynamics are investigated experimentally and compared to Monte-Carlo simulations. This allows the identification of the conditions optimizing contrast and sensitivity which compare favorably with respect to optical detection.
We investigate the magnetic field dependent photo-physics of individual Nitrogen-Vacancy (NV) color centers in diamond under cryogenic conditions. At distinct magnetic fields, we observe significant reductions in the NV photoluminescence rate, which indicate a marked decrease in the optical readout efficiency of the NVs ground state spin. We assign these dips to excited state level anti-crossings, which occur at magnetic fields that strongly depend on the effective, local strain environment of the NV center. Our results offer new insights into the structure of the NVs excited states and a new tool for their effective characterization. Using this tool, we observe strong indications for strain-dependent variations of the NVs orbital g-factor, obtain new insights into NV charge state dynamics, and draw important conclusions regarding the applicability of NV centers for low-temperature quantum sensing.
The advancement of quantum optical science and technology with solid-state emitters such as nitrogen-vacancy (NV) centers in diamond critically relies on the coherence of the emitters optical transitions. A widely employed strategy to create NV centers at precisely controlled locations is nitrogen ion implantation followed by a high-temperature annealing process. We report on experimental data directly correlating the NV center optical coherence to the origin of the nitrogen atom. These studies reveal low-strain, narrow-optical-linewidth ($<500$ MHz) NV centers formed from naturally-occurring $^{14}$N atoms. In contrast, NV centers formed from implanted $^{15}$N atoms exhibit significantly broadened optical transitions ($>1$ GHz) and higher strain. The data show that the poor optical coherence of the NV centers formed from implanted nitrogen is not due to an intrinsic effect related to the diamond or isotope. These results have immediate implications for the positioning accuracy of current NV center creation protocols and point to the need to further investigate the influence of lattice damage on the coherence of NV centers from implanted ions.
Diamond membrane devices containing optically coherent nitrogen-vacancy (NV) centers are key to enable novel cryogenic experiments such as optical ground-state cooling of hybrid spin-mechanical systems and efficient entanglement distribution in quantum networks. Here, we report on the fabrication of a (3.4 $pm$ 0.2) {mu}m thin, smooth (surface roughness r$_q$ < 0.4 nm over an area of 20 {mu}m by 30 {mu}m diamond membrane containing individually resolvable, narrow linewidth (< 100 MHz) NV centers. We fabricate this sample via a combination of high energy electron irradiation, high temperature annealing, and an optimized etching sequence found via a systematic study of the diamond surface evolution on the microscopic level in different etch chemistries. While our particular device dimensions are optimized for cavity-enhanced entanglement generation between distant NV centers in open, tuneable micro-cavities, our results have implications for a broad range of quantum experiments that require the combination of narrow optical transitions and {mu}m-scale device geometry.
We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place the platform in a strong position to realize measurement-based quantum information protocols utilizing the NV center in diamond.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
