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Register a new userSuperconducting properties of novel BiSe$_{2}$-based layered LaO$_{1-x}$F$_{x}$BiSe$_{2}$ single crystals
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F-doped LaOBiSe$_{2}$ superconducting single crystals with typical size of 2$times$4$times$0.2 mm$^{3}$ are successfully grown by flux method and the superconducting properties are studied. Both the superconducting transition temperature and the shielding volume fraction are effectively improved with fluorine doping. The LaO$_{0.48}$F$_{0.52}$BiSe$_{1.93}$ sample exhibits zero-resistivity at 3.7 K, which is higher than that of the LaO$_{0.5}$F$_{0.5}$BiSe$_{2}$ polycrystalline sample (2.4K). Bulk superconductivity is confirmed by a clear specific-heat jump at the associated temperature. The samples exhibit strong anisotropy and the anisotropy parameter is about 30, as estimated by the upper critical field and effective mass model
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We report density functional calculations of the electronic structure, Fermi surface, phonon spectrum and electron--phonon coupling for newly discovered superconductor LaO$_{0.5}$F$_{0.5}$BiSe$_{2}$. Significant similarity between LaO$_{0.5}$F$_{0.5}$BiS$_{2}$ and LaO$_{0.5}$F$_{0.5}$BiSe$_{2}$ is found, i.e. there is a strong Fermi surface nesting at ($pi $,$pi $,0), which results in unstable phonon branches. Combining the frozen phonon total energy calculations and an anharmonic oscillator model, we find that the quantum fluctuation prevents the appearance of static long--range order. The calculation shows that LaO$_{0.5}$F$_{0.5}$BiSe$_{2}$ is highly anisotropic, and same as LaO$_{0.5}$F$_{0.5}$BiS$_{2}$, this compound is also a conventional electron-phonon coupling induced superconductor.
We use core level and valence band soft x-ray photoemission spectroscopy (SXPES) to investigate electronic structure of new BiS$_{2}$ layered superconductor LaO$_{1-x}$F$_{x}$BiS$_{2}$. Core level spectra of doped samples show a new spectral feature at the lower binding energy side of the Bi 4${f}$ main peak, which may be explained by core-hole screening with metallic states near the Fermi level ($E_{rm F}$). Experimental electronic structure and its ${x}$ dependence (higher binding energy shift of the valence band as well as appearance of new states near $E_{rm F}$ having dominant Bi 6${p}$ character) were found to be consistent with the predictions of band structure calculations in general. Noticeable deviation of the spectral shape of the states near $E_{rm F}$ from that of calculations might give insight into the interesting physical properties. These results provide first experimental electronic structure of the new BiS$_{2}$ layered superconductors.
A good description of the electronic structure of BiS$_{2}$-based superconductors is essential to understand their phase diagram, normal state and superconducting properties. To describe the first reports of normal state electronic structure features from angle resolved photoemission spectroscopy (ARPES) in LaO$_{1-x}$F$_{x}$BiS$_{2}$, we used a minimal microscopic model to study their low energy properties. It includes the two effective tight-binding bands proposed by Usui et al [Phys.Rev.B 86, 220501(R)(2012)], and we added moderate intra- and inter-orbital electron correlations related to Bi-($p_{Y}$, $p_{X}$) and S-($p_{Y}$, $p_{X}$) orbitals. We calculated the electron Greens functions using their equations of motion, which we decoupled in second-order of perturbations on the correlations. We determined the normal state spectral density function and total density of states for LaO$_{1-x}$F$_{x}$BiS$_{2}$, focusing on the description of the k-dependence, effect of doping, and the prediction of the temperature dependence of spectral properties. Including moderate electron correlations, improves the description of the few experimental ARPES and soft X-ray photoemission data available for LaO$_{1-x}$F$_{x}$BiS$_{2}$. Our analytical approximation enabled us to calculate the spectral density around the conduction band minimum at $vec{k}_{0}=(0.45pi,0.45pi)$, and to predict the temperature dependence of the spectral properties at different BZ points, which might be verified by temperature dependent ARPES.
We measure the magnetic penetration depth $Deltalambda(T)$ for NdO$_{1-x}$F$_{x}$BiS$_{2}$ ($x$ = 0.3 and 0.5) using the tunnel diode oscillator technique. The $Deltalambda(T)$ shows an upturn in the low-temperature limit which is attributed to the paramagnetism of Nd ions. After subtracting the paramagnetic contributions, the penetration depth $Deltalambda(T)$ follows exponential-type temperature dependence at $Tll T_c$. Both $Deltalambda(T)$ and the corresponding superfluid density $rho_s(T)$ can be described by the BCS model with an energy gap of $Delta(0)$ $approx$ 2.0 $k_BT_c$ for both $x$ = 0.3 and 0.5, suggesting strong-coupling BCS superconductivity in the presence of localized moments for NdO$_{1-x}$F$_{x}$BiS$_{2}$.
We have employed a new route to synthesize single phase F-doped LaOFeAs compound and confirmed the superconductivity above 20 K in this Fe-based system. We show that the new superconductor has a rather high upper critical field of about 54 T. A clear signature of superconducting gap opening below T$_c$ was observed in the far-infrared reflectance spectra, with 2$Delta/textit{k}T_capprox$3.5-4.2. Furthermore, we show that the new superconductor has electron-type conducting carrier with a rather low carrier density.
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