Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userAngular and temperature dependence of current induced spin-orbit effective fields in Ta/CoFeB/MgO nanowires
221
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Current induced spin-orbit effective magnetic fields in metal/ferromagnet/oxide trilayers provide a new way to manipulate the magnetization, which is an alternative to the conventional current induced spin transfer torque arising from noncollinear magnetization. Ta/CoFeB/MgO structures are expected to be useful for non-volatile memories and logic devices due to its perpendicular anisotropy and large current induced spin-orbit effective fields. However many aspects such as the angular and temperature dependent phenomena of the effective fields are little understood. Here, we evaluate the angular and temperature dependence of the current-induced spin-orbit effective fields considering contributions from both the anomalous and planar Hall effects. The longitudinal and transverse components of effective fields are found to have strong angular dependence on the magnetization direction at 300 K. The transverse field decreases significantly with decreasing temperature, whereas the longitudinal field shows weaker temperature dependence. Our results reveal important features and provide an opportunity for a more comprehensive understanding of current induced spin-orbit effective fields.
rate research
Read More
Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the so-called synthetic antiferromagnets (SAF), are usually employed to serve as the pinned layer of spintronic devices based on spin valves and magnetic tunnel junctions to reduce the stray field and/or increase the pinning field. Here we investigate the spin-orbit torque in MgO/CoFeB/Ta/CoFeB/MgO perpendicularly magnetized multilayer with interlayer antiferromagnetic coupling. It is found that the magnetization of two CoFeB layers can be switched between two antiparallel states simultaneously. This observation is replicated by the theoretical calculations by solving Stoner-Wohlfarth model and Landau-Lifshitz-Gilbert equation. Our findings combine spin-orbit torque and interlayer coupling, which might advance the magnetic memories with low stray field and low power consumption.
Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with voltage administered through SrTiO3 with a high dielectric constant. We show that a DC voltage can significantly lower PMA by 45%, reduce switching current by 23%, and increase the damping-like torque as revealed by the first and second-harmonic measurements. These are characteristics that are prerequisites for voltage-controlled and voltage-select SOT switching spintronic devices.
We investigated the temperature dependence of the switching current for a perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten film with large oxygen content: nc-W(O). The spin Hall angle $|Theta_mathrm{SH}| approx 0.22$ is independent of temperature, whereas the switching current increases strongly at low temperature. We show that the nc-W(O) is insensitive to annealing. It thus can be a good choice for the integration of spin Hall driven writing of information in magnetic memory or logic devices that require a high-temperature annealing process during fabrication.
Extensive efforts have been devoted to the study of spin-orbit torque in ferromagnetic metal/heavy metal bilayers and exploitation of it for magnetization switching using an in-plane current. As the spin-orbit torque is inversely proportional to the thickness of the ferromagnetic layer, sizable effect has only been realized in bilayers with an ultrathin ferromagnetic layer. Here we demonstrate that, by stacking ultrathin Pt and FeMn alternately, both ferromagnetic properties and current induced spin-orbit torque can be achieved in FeMn/Pt multilayers without any constraint on its total thickness. The critical behavior of these multilayers follows closely three-dimensional Heisenberg model with a finite Curie temperature distribution. The spin torque effective field is about 4 times larger than that of NiFe/Pt bilayer with a same equivalent NiFe thickness. The self-current generated spin torque is able to switch the magnetization reversibly without the need for an external field or a thick heavy metal layer. The removal of both thickness constraint and necessity of using an adjacent heavy metal layer opens new possibilities for exploiting spin-orbit torque for practical applications.
We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 degrees C and characterized using x-ray absorption spectroscopy, transmission electron microscopy, resistivity, and Hall effect measurements. By performing adiabatic harmonic Hall voltage measurements, we show that the transverse (field-like) and longitudinal (antidamping-like) spin-orbit torques are composed of constant and magnetization-dependent contributions, both of which vary strongly with annealing. Such variations correlate with changes of the saturation magnetization and magnetic anisotropy and are assigned to chemical and structural modifications of the layers. The relative variation of the constant and anisotropic torque terms as a function of annealing temperature is opposite for the field-like and antidamping torques. Measurements of the switching probability using sub-{mu}s current pulses show that the critical current increases with the magnetic anisotropy of the layers, whereas the switching efficiency, measured as the ratio of magnetic anisotropy energy and pulse energy, decreases. The optimal annealing temperature to achieve maximum magnetic anisotropy, saturation magnetization, and switching efficiency is determined to be between 240 degrees and 270 degrees C.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
