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Fieldlike and antidamping spin-orbit torques in as-grown and annealed Ta/CoFeB/MgO layers

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 Added by Can Onur Avci
 Publication date 2014
  fields Physics
and research's language is English




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We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 degrees C and characterized using x-ray absorption spectroscopy, transmission electron microscopy, resistivity, and Hall effect measurements. By performing adiabatic harmonic Hall voltage measurements, we show that the transverse (field-like) and longitudinal (antidamping-like) spin-orbit torques are composed of constant and magnetization-dependent contributions, both of which vary strongly with annealing. Such variations correlate with changes of the saturation magnetization and magnetic anisotropy and are assigned to chemical and structural modifications of the layers. The relative variation of the constant and anisotropic torque terms as a function of annealing temperature is opposite for the field-like and antidamping torques. Measurements of the switching probability using sub-{mu}s current pulses show that the critical current increases with the magnetic anisotropy of the layers, whereas the switching efficiency, measured as the ratio of magnetic anisotropy energy and pulse energy, decreases. The optimal annealing temperature to achieve maximum magnetic anisotropy, saturation magnetization, and switching efficiency is determined to be between 240 degrees and 270 degrees C.



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We investigate the spin Hall effect in perpendicularly magnetized Ta/Co40Fe40B20/MgO trilayers with Ta underlayers thicker than the spin diffusion length. The crystallographic structures of the Ta layer and Ta/CoFeB interface are examined in detail using X-ray diffraction and transmission electron microscopy. The thinnest Ta underlayer is amorphous, whereas for thicker Ta layers a disoriented tetragonal beta-phase appears. Effective spin-orbit torques are calculated based on harmonic Hall voltage measurements performed in a temperature range between 15 and 300 K. To account for the temperature dependence of damping-like and field-like torques, we extend the spin diffusion model by including an additional contribution from the Ta/CoFeB interface. Based on this approach, the temperature dependence of the spin Hall angle in the Ta underlayer and at Ta/CoFeB interface are determined separately. The results indicate an almost temperature-independent spin Hall angle of theta_SH-N = -0.2 in Ta and a strongly temperature-dependent theta_SH-I for the intermixed Ta/CoFeB interface.
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We report on the excitation and detection of short-waved spin waves with wave vectors up to about $40,mathrm{rad},mumathrm{m}^{-1}$ in spin-wave waveguides made from ultrathin, in-plane magnetized Co$_{8}$Fe$_{72}$B$_{20}$ (CoFeB). The CoFeB is incorporated in a layer stack of Ta/CoFeB/Mgo, a layer system featuring large spin orbit torques and a large perpendicular magnetic anisotropy constant. The short-waved spin waves are excited by nanometric coplanar waveguides and are detected via spin rectification and microfocussed Brillouin light scattering spectroscopy. We show that the large perpendicular magnetic anisotropy benefits the spin-wave lifetime greatly, resulting in a lifetime comparable to bulk systems without interfacial damping. The presented results pave the way for the successful extension of magnonics to ultrathin asymmetric layer stacks featuring large spin orbit torques.
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We study effects originating from the strong spin orbit coupling in CoFeB/MgO heterostructures with heavy metal (HM) underlayers. The perpendicular magnetic anisotropy at the CoFeB/MgO interface, the spin Hall angle of the heavy metal layer, current induced torques and the Dzyaloshinskii-Moriya interaction at the HM/CoFeB interfaces are studied for films in which the early 5d transition metals are used as the HM underlayer. We show how the choice of the HM layer influences these intricate spin orbit effects that emerge within the bulk and at interfaces of the heterostructures.
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