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Register a new userLarge-Area Nanopatterned Graphene For Ultrasensitive Gas Sensing
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Added by
Alberto Cagliani Dr.
Publication date
2014
fields
Physics
and research's language is
English
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Chemical vapor deposited graphene is nanopatterned by a spherical block-copolymer etch mask. The use of spherical rather than cylindrical block copolymers allows homogeneous patterning of cm-scale areas without any substrate surface treatment. Raman spectroscopy was used to study the controlled generation of point defects in the graphene lattice with increasing etching time, confirming that alongside the nanomesh patterning, the nanopatterned CVD graphene presents a high defect density between the mesh holes. The nanopatterned samples showed sensitivities for NO2 of more than one order of magnitude higher than for non-patterned graphene. NO2 concentrations as low as 300 ppt were detected with an ultimate detection limit of tens of ppt. This is so far the smallest value reported for not UV illuminated graphene chemiresistive NO2 gas sensors. The drastic improvement in the gas sensitivity is believed to be due to the high adsorption site density, thanks to the combination of edge sites and point defect sites. This work opens the possibility of large area fabrication of nanopatterned graphene with extreme density of adsorption sites for sensing applications.
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Enhancing light-matter interaction by exciting Dirac plasmons on nanopatterned monolayer graphene is an efficient route to achieve high infrared absorption. Here, we designed and fabricated the hexagonal planar arrays of nanohole and nanodisk with and without optical cavity to excite Dirac plasmons on the patterned graphene and investigated the role of plasmon lifetime, extinction cross-section, incident light polarization, the angle of incident of light and pattern dimensions on the light absorption spectra.
The main challenge to exploiting plasmons for gas vibrational mode sensing is the extremely weak infrared absorption of gas species. In this work, we explore the possibility of trapping free gas molecules via surface adsorption, optical, or electrostatic fields to enhance gas-plasmon interactions and to increase plasmon sensing ability. We discuss the relative strengths of these trapping forces and found gas adsorption in a typical nanoribbon array plasmonic setup produces measurable dips in optical extinction of magnitude 0.1 % for gas concentration of about parts per thousand level.
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metalization process. The tested devices had an initial carrier concentration of (0.6 - 10)*10^11 1/cm^2 and showed half-integer quantum Hall effect at a relatively low (3 T) magnetic field. Application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance (QHR) in graphene and GaAs devices at moderate magnetic field strengths (<7 T) showed a relative agreement within 6*10^-9.
Using ultrahigh magnetic fields up to 170 T and polarized midinfrared radiation with tunable wavelengths from 9.22 to 10.67 um, we studied cyclotron resonance in large-area graphene grown by chemical vapor deposition. Circular-polarization dependent studies reveal strong p-type doping for as-grown graphene, and the dependence of the cyclotron resonance on radiation wavelength allows for a determination of the Fermi energy. Thermal annealing shifts the Fermi energy to near the Dirac point, resulting in the simultaneous appearance of hole and electron cyclotron resonance in the magnetic quantum limit, even though the sample is still p-type, due to graphenes linear dispersion and unique Landau level structure. These high-field studies therefore allow for a clear identification of cyclotron resonance features in large-area, low-mobility graphene samples.
Large assemblies of self-organized aluminum nanoclusters embedded in an oxide layer are formed on graphene templates and used to build tunnel-junction devices. Unexpectedly, single-electron-transport behavior with well-defined Coulomb oscillations is observed for a record junction area containing millions of metal islands. Such hybrid materials offer new prospects for single-electron electronics.
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