Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userDistinct Competing Ordered { u}=2 States in Bilayer Graphene
139
0
0.0
(
0
)
Added by
Chun Ning (Jeanie) Lau
Publication date
2014
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
Because of its large density-of-states and the 2{pi} Berry phase near its low-energy band-contact points, neutral bilayer graphene (BLG) at zero magnetic field (B) is susceptible to chiral-symmetry breaking, leading to a variety of gapped spontaneous quantum Hall states distinguished by valley and spin-dependent quantized Hall conductivities. Among these, the layer antiferromagnetic state, which has quantum valley Hall (QVH) effects of opposite sign for opposite spins, appears to be the thermodynamic ground state. Though other gapped states have not been observed experimentally at B=0, they can be explored by exploiting their adiabatic connection to quantum Hall states with the same total Hall conductivity {sigma}H. In this paper, by using a magnetic field to select filling factor { u}=2 states with {sigma}H=2e^2/h, we demonstrate the presence of a quantum anomalous Hall (QAH) state for the majority spin, and a Kekule state with spontaneous valley coherence and a quantum valley Hall state for the minority spin in BLG. By providing the first spectroscopic mapping of spontaneous Hall states at { u}=2, our results shed further light on the rich set of competing ordered states in BLG.
rate research
Read More
When twisted to angles near 1{deg}, graphene multilayers provide a new window on electron correlation physics by hosting gate-tuneable strongly-correlated states, including insulators, superconductors, and unusual magnets. Here we report the discovery of a new member of the family, density-wave states, in double bilayer graphene twisted to 2.37{deg}. At this angle the moire states retain much of their isolated bilayer character, allowing their bilayer projections to be separately controlled by gates. We use this property to generate an energetic overlap between narrow isolated electron and hole bands with good nesting properties. Our measurements reveal the formation of ordered states with reconstructed Fermi surfaces, consistent with density-wave states, for equal electron and hole densities. These states can be tuned without introducing chemical dopants, thus opening the door to a new class of fundamental studies of density-waves and their interplay with superconductivity and other types of order, a central issue in quantum matter physics.
The flat bands in bilayer graphene(BLG) are sensitive to electric fields Ebot directed between the layers, and magnify the electron-electron interaction effects, thus making BLG an attractive platform for new two-dimensional (2D) electron physics[1-5]. Theories[6-16] have suggested the possibility of a variety of interesting broken symmetry states, some characterized by spontaneous mass gaps, when the electron-density is at the carrier neutrality point (CNP). The theoretically proposed gaps[6,7,10] in bilayer graphene are analogous[17,18] to the masses generated by broken symmetries in particle physics and give rise to large momentum-space Berry curvatures[8,19] accompanied by spontaneous quantum Hall effects[7-9]. Though recent experiments[20-23] have provided convincing evidence of strong electronic correlations near the CNP in BLG, the presence of gaps is difficult to establish because of the lack of direct spectroscopic measurements. Here we present transport measurements in ultra-clean double-gated BLG, using source-drain bias as a spectroscopic tool to resolve a gap of ~2 meV at the CNP. The gap can be closed by an electric field Ebot sim13 mV/nm but increases monotonically with a magnetic field B, with an apparent particle-hole asymmetry above the gap, thus providing the first mapping of the ground states in BLG.
Topological insulators realized in materials with strong spin-orbit interactions challenged the long-held view that electronic materials are classified as either conductors or insulators. The emergence of controlled, two-dimensional moire patterns has opened new vistas in the topological materials landscape. Here we report on evidence, obtained by combining thermodynamic measurements, local and non-local transport measurements, and theoretical calculations, that robust topologically non-trivial, valley Chern insulators occur at charge neutrality in twisted double-bilayer graphene (TDBG). These time reversal-conserving valley Chern insulators are enabled by valley-number conservation, a symmetry that emerges from the moire pattern. The thermodynamic gap extracted from chemical potential measurements proves that TDBG is a bulk insulator under transverse electric field, while transport measurements confirm the existence of conducting edge states. A Landauer-Buttiker analysis of measurements on multi-terminal samples allows us to quantitatively assess edge state scattering and demonstrate that it does not destroy the edge states, leaving the bulk-boundary correspondence largely intact.
When bilayer graphene is rotationally faulted to an angle $thetaapprox 1.1^circ$, theory predicts the formation of a flat electronic band and correlated insulating, superconducting, and ferromagnetic states have all been observed at partial band filling. The proximity of superconductivity to correlated insulators has suggested a close relationship between these states, reminiscent of the cuprates where superconductivity arises by doping a Mott insulator. Here, we show that superconductivity can appear without correlated insulating states. While both superconductivity and correlated insulating behavior are strongest near the flat band condition, superconductivity survives to larger detuning of the angle. Our observations are consistent with a competing phases picture, in which insulators and superconductivity arise from disparate mechanisms.
Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gaps effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by topological in-gap states, or that the electronic structure could be altogether changed by many-body effects. Here we directly follow the excited carriers in bilayer graphene on a femtosecond time scale, using ultrafast time- and angle-resolved photoemission. We find a behavior consistent with a single-particle band gap. Compared to monolayer graphene, the existence of this band gap leads to an increased carrier lifetime in the minimum of the lowest conduction band. This is in sharp contrast to the second sub-state of the conduction band, in which the excited electrons decay through fast, phonon-assisted inter-band transitions.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
