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Register a new userE-BLOW: E-Beam Lithography Overlapping aware Stencil Planning for MCC System
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Added by
Bei Yu
Publication date
2014
fields
Informatics Engineering
and research's language is
English
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Electron beam lithography (EBL) is a promising maskless solution for the technology beyond 14nm logic node. To overcome its throughput limitation, recently the traditional EBL system is extended into MCC system. %to further improve the throughput. In this paper, we present E-BLOW, a tool to solve the overlapping aware stencil planning (OSP) problems in MCC system. E-BLOW is integrated with several novel speedup techniques, i.e., successive relaxation, dynamic programming and KD-Tree based clustering, to achieve a good performance in terms of runtime and solution quality. Experimental results show that, compared with previous works, E-BLOW demonstrates better performance for both conventional EBL system and MCC system.
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Layout fracturing is a fundamental step in mask data preparation and e-beam lithography (EBL) writing. To increase EBL throughput, recently a new L-shape writing strategy is proposed, which calls for new L-shape fracturing, versus the conventional rectangular fracturing. Meanwhile, during layout fracturing, one must minimize very small/narrow features, also called slivers, due to manufacturability concern. This paper addresses this new research problem of how to perform L-shaped fracturing with sliver minimization. We propose two novel algorithms. The first one, rectangular merging (RM), starts from a set of rectangular fractures and merges them optimally to form L-shape fracturing. The second algorithm, direct L-shape fracturing (DLF), directly and effectively fractures the input layouts into L-shapes with sliver minimization. The experimental results show that our algorithms are very effective.
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