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Register a new userSingle spin-torque vortex oscillator using combined bottom-up approach and e-beam lithography
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Added by
Flavio Abreu Araujo
Publication date
2013
fields
Physics
and research's language is
English
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A combined bottom-up assembly of electrodeposited nanowires and electron beam lithography technique has been developed to investigate the spin transfer torque and microwave emission on specially designed nanowires containing a single Co/Cu/Co pseudo spin valve. Microwave signals have been obtained even at zero magnetic field. Interestingly, high frequency vs. magnetic field tunability was demonstrated, in the range 0.4 - 2 MHz/Oe, depending on the orientation of the applied magnetic field relative to the magnetic layers of the pseudo spin valve. The frequency values and the emitted signal frequency as a function of the external magnetic field are in good quantitative agreement with the analytical vortex model as well as with micromagnetic simulations.
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We report on a new approach, entirely based on electron-beam lithography technique, to contact electrically, in a four-probe scheme, single nanostructures obtained by self-assembly. In our procedure, nanostructures of interest are localised and contacted in the same fabrication step. This technique has been developed to study the field-induced reversal of an internal component of an asymmetric Bloch domain wall observed in elongated structures such as Fe(110) dots. We have focused on the control, using an external magnetic field, of the magnetisation orientation within Neel caps that terminate the domain wall at both interfaces. Preliminary magneto-transport measurements are discussed demonstrating that single Fe(110) dots have been contacted.
In this paper we show spin dependent transport experiments in nanoconstrictions ranging from 30 to 200nm. These nanoconstrictions were fabricated combining electron beam lithography and thin film deposition techniques. Two types of geometries have been fabricated and investigated. We compare the experimental results with the theoretical estimation of the electrical resistance. Finally we show that the magnetoresistance for the different geometries does not scale with the resistance of the structure and obtain drops in voltage of 20mV at 20Oe.
In the frame of the 20th Anniversary of the Journal of Nanoparticle Research (JNR), our aim is to start from the historical context twenty, years ago and to give some recent results and perspectives concerning nanomagnets prepared from clusters preformed in the gas phase using the Low Energy Cluster Beam Deposition (LECBD) technique. In this paper, we focus our attention on the typical case of Co clusters embedded in various matrices to study interface magnetic anisotropy and magnetic interactions as a function of volume concentrations, and on still current and perspectives through two examples of binary metallic 3d-5d TM (namely CoPt and FeAu) clusters assemblies to illustrate size-related and nanoalloy phenomena on magnetic properties in well-defined mass-selected clusters. The structural and magnetic properties of these cluster assemblies were investigated using various experimental techniques that include High Resolution Transmission Electron Microscopy (HRTEM), Superconducting Quantum Interference Device (SQUID) magnetometry, as well as synchrotron techniques such as Extended X-Ray Absorption Fine Structure (EXAFS) and X-Ray Magnetic Circular Dichroism (XMCD). Depending on the chemical nature of both NPs and matrix, we observe different magnetic responses compared to their bulk counterparts. In particular, we show how finite size effects (size reduction) enhance their magnetic moment and how specific relaxation in nanoalloys can impact their magnetic anisotropy.
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an improvement of the timescales underlying the current driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetization reversal driven by SOT in a three-terminal MTJ device. Single-shot measurements of the MTJ resistance during current injection reveal that SOT switching involves a stochastic two-step process consisting of a domain nucleation time and propagation time, which have different genesis, timescales, and statistical distributions compared to STT switching. We further show that the combination of SOT, STT, and voltage control of magnetic anisotropy (VCMA) leads to reproducible sub-ns switching with a spread of the cumulative switching time smaller than 0.2 ns. Our measurements unravel the combined impact of SOT, STT, and VCMA in determining the switching speed and efficiency of MTJ devices.
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material,[1] a light emitting medium in silicon-integrated lasers,[2,3] and a plasmonic conductor for bio-sensing.[4,5] Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (10^19 to 10^20 cm-3) low-resistivity (10^-4 Ohmcm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies.[6] We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.
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