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Register a new userRaman quantum memory based on an ensemble of nitrogen-vacancy centers coupled to a microcavity
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We propose a scheme to realize optical quantum memories in an ensemble of nitrogen-vacancy centers in diamond that are coupled to a micro-cavity. The scheme is based on off-resonant Raman coupling, which allows one to circumvent optical inhomogeneous broadening and store optical photons in the electronic spin coherence. This approach promises a storage time of order one second and a time-bandwidth product of order 10$^7$. We include all possible optical transitions in a 9-level configuration, numerically evaluate the efficiencies and discuss the requirements for achieving high efficiency and fidelity.
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Optical microcavities are a powerful tool to enhance spontaneous emission of individual quantum emitters. However, the broad emission spectra encountered in the solid state at room temperature limit the influence of a cavity, and call for ultra-small mode volume. We demonstrate Purcell-enhanced single photon emission from nitrogen-vacancy (NV) centers in nanodiamonds coupled to a tunable fiber-based microcavity with a mode volume down to $1.0,lambda^{3}$. We record cavity-enhanced fluorescence images and study several single emitters with one cavity. The Purcell effect is evidenced by enhanced fluorescence collection, as well as tunable fluorescence lifetime modification, and we infer an effective Purcell factor of up to 2.0. With numerical simulations, we furthermore show that a novel regime for light confinement can be achieved, where a Fabry-Perot mode is combined with additional mode confinement by the nanocrystal itself. In this regime, effective Purcell factors of up to 11 for NV centers and 63 for silicon vacancy centers are feasible, holding promise for bright single photon sources and efficient spin readout under ambient conditions.
It is proposed that the ground-state manifold of the neutral nitrogen-vacancy center in diamond could be used as a quantum two-level system in a solid-state-based implementation of a broadband, noise-free quantum optical memory. The proposal is based on the same-spin $Lambda$-type three-level system created between the two E orbital ground states and the A$_1$ orbital excited state of the center, and the cross-linear polarization selection rules obtained with the application of transverse electric field or uniaxial stress. Possible decay and decoherence mechanisms of this system are discussed, and it is shown that high-efficiency, noise-free storage of photons as short as a few tens of picoseconds for at least a few nanoseconds could be possible at low temperature.
In this paper we study the time evolution of the entanglement between two remote NV Centers (nitrogen vacancy in diamond) connected by a dual-mode nanomechanical resonator with magnetic tips on both sides. Calculating the negativity as a measure for the entanglement, we find that the entanglement between two spins oscillates with time and can be manipulated by varying the parameters of the system. We observed the phe- nomenon of a sudden death and the periodic revivals of entanglement in time. For the study of quantum deco- herence, we implement a Lindblad master equation. In spite of its complexity, the model is analytically solvable under fairly reasonable assumptions, and shows that the decoherence influences the entanglement, the sudden death, and the revivals in time.
We demonstrate a spin-based, all-dielectric electrometer based on an ensemble of nitrogen-vacancy (NV$^-$) defects in diamond. An applied electric field causes energy level shifts symmetrically away from the NV$^-$s degenerate triplet states via the Stark effect; this symmetry provides immunity to temperature fluctuations allowing for shot-noise-limited detection. Using an ensemble of NV$^-$s, we demonstrate shot-noise limited sensitivities approaching 1 V/cm/$sqrt{text{Hz}}$ under ambient conditions, at low frequencies ($<$10 Hz), and over a large dynamic range (20 dB). A theoretical model for the ensemble of NV$^-$s fits well with measurements of the ground-state electric susceptibility parameter, $langle k_perprangle$. Implications of spin-based, dielectric sensors for micron-scale electric-field sensing are discussed.
The nitrogen-vacancy (NV) color center in diamond is an atom-like system in the solid-state which specific spin properties can be efficiently used as a sensitive magnetic sensor. An external magnetic field induces Zeeman shifts of the NV center levels which can be measured using Optically Detected Magnetic Resonance (ODMR). In this work, we exploit the ODMR signal of an ensemble of NV centers in order to quantitatively map the vectorial structure of a magnetic field produced by a sample close to the surface of a CVD diamond hosting a thin layer of NV centers. The reconstruction of the magnetic field is based on a maximum-likelihood technique which exploits the response of the four intrinsic orientations of the NV center inside the diamond lattice. The sensitivity associated to a 1 {mu}m^2 area of the doped layer, equivalent to a sensor consisting of approximately 10^4 NV centers, is of the order of 2 {mu}T/sqrt{Hz}. The spatial resolution of the imaging device is 400 nm, limited by the numerical aperture of the optical microscope which is used to collect the photoluminescence of the NV layer. The versatility of the sensor is illustrated by the accurate reconstruction of the magnetic field created by a DC current inside a copper wire deposited on the diamond sample.
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