The effect of hydrostatic pressure on resistivity and magnetic ac susceptibility has been studied in Mn-doped CdGeAs2 room-temperature (RT) ferromagnetic chalcopyrite with two types of MnAs micro-clusters. The slight increase of temperature by about 30 K in the region between RT and Curie temperature TC causes a significant change in the positions of pressure-induced semiconductor-metal transition and magnetic phase transitions in low pressure area. By conducting measurements of the anomalous Hall resistance in the field H leq 5 kOe, we present experimental evidence for pressure-induced metamagnetic-like state during the paramagnetic phase at pressure P = 5 GPa.
The structural and magnetic properties of double perovskiteTb2CoMnO6 have been investigated. Electronic structure analysis by XPS study reveals the presence of mixed oxidation state (Mn4+/Mn3+ and Co2+/Co3+) of B-site ions. The dc and ac magnetization measurements reveal different interesting phases such as Griffith phase, re-entrant spin glass, metamagnetic steps, Hopkinson like peak and also unusual slow relaxation. The M-H curve indicates the presence of competing AFM/FM interactions. The disorder in Tb2CoMnO6 leads to spin frustration at low temperature giving rise to the re-entrant spin glass. Moreover, the field-dependent ac susceptibility studies unraveled the presence of Hopkinson like peak associated with the domain wall motion and the large anisotropy field. The further study yielded that the relaxation associated with this peak is unusually slow.
Birnessite compounds are stable across a wide range of compositions that produces a remarkable diversity in their physical, electrochemical and functional properties. These are hydrated analogues of the magnetically frustrated, mixed-valent manganese oxide structures, with general formula, NaxMnO2. Here we demonstrate that the direct hydration of layered rock-salt type a-NaMnO2, with the geometrically frustrated triangular lattice topology, yields the birnessite type oxide, Na0.36MnO2 0.2H2O, transforming its magnetic properties. This compound has a much-expanded interlayer spacing compared to its parent a-NaMnO2 compound. We show that while the parent a-NaMnO2 possesses a Neel temperature of 45 K as a result of broken symmetry in the Mn3+ sub-lattice, the hydrated derivative undergoes collective spin-freezing at 29 K within the Mn3+/Mn4+ sub-lattice. Scaling-law analysis of the frequency dispersion of the AC susceptibility, as well as the temperature-dependent, low-field DC magnetization confirm a cooperative spin-glass state of strongly interacting spins. This is supported by complementary spectroscopic analysis (HAADF-STEM, EDS, EELS) as well as by a structural investigation (high-resolution TEM, X-ray and neutron powder diffraction) that yield insights into the chemical and atomic structure modifications. We conclude that the spin-glass state in birnessite is driven by the spin-frustration imposed by the underlying triangular lattice topology that is further enhanced by the in-plane bond-disorder generated by the mixed-valent character of manganese in the layers.
Substitutions in the Mn-sublattice of antiferromagnetic, charge and orbitally ordered manganites was recently found to produce intriguing metamagnetic transitions, consisting of a succession of sharp magnetization steps separated by plateaus. The compounds exhibiting such features can be divided in two categories, depending on whether they are sensitive to thermal cycling effects or not. One compound of each category has been considered in the present study. The paper reports on the influence of two treatments: high-temperature annealing and grinding. It is shown that both of these treatments can drastically affect the phenomenon of magnetization steps. These results provide us with new information about the origin of these jumps in magnetization.
We report a pressure-induced phase transition in the frustrated kagome material jarosite at ~45 GPa, which leads to the disappearance of magnetic order. Using a suite of experimental techniques, we characterize the structural, electronic, and magnetic changes in jarosite through this phase transition. Synchrotron powder X-ray diffraction and Fourier transform infrared spectroscopy experiments, analyzed in aggregate with the results from density functional theory calculations, indicate that the material changes from a R-3m structure to a structure with a R-3c space group. The resulting phase features a rare twisted kagome lattice in which the integrity of the equilateral Fe3+ triangles persists. Based on symmetry arguments we hypothesize that the resulting structural changes alter the magnetic interactions to favor a possible quantum paramagnetic phase at high pressure.
We present results of a combined density functional and many-body calculations for the electronic and magnetic properties of the defect-free digital ferromagnetic heterostructures obtained by doping GaAs with Cr and Mn. While local density approximation/(+U) predicts half-metallicity in these defect-free delta-doped heterostructures, we demonstrate that local many-body correlations captured by Dynamical Mean Field Theory induce within the minority spin channel non-quasiparticle states just above $E_F$. As a consequence of the existence of these many-body states the half-metallic gap is closed and the carriers spin polarization is significantly reduced. Below the Fermi level the minority spin highest valence states are found to localize more on the GaAs layers being independent of the type of electronic correlations considered. Thus, our results confirm the confinement of carriers in these delta-doped heterostructures, having a spin-polarization that follow a different temperature dependence than magnetization. We suggest that polarized hot-electron photoluminescence experiments might bring evidence for the existence of many-body states within the minority spin channel and their finite temperature behavior.
T. R. Arslanov
,A. Yu. Mollaev
,I. K. Kamilov
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(2013)
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"Emergence of pressure-induced metamagnetic-like state in Mn-doped CdGeAs2 chalcopyrite"
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Tapan Chatterji
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