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Register a new userNuclear magnetization in gallium arsenide quantum dots at zero magnetic field
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Optical and electrical control of the nuclear spin system allows enhancing the sensitivity of NMR applications and spin-based information storage and processing. Dynamic nuclear polarization in semiconductors is commonly achieved in the presence of a stabilizing external magnetic field. Here we report efficient optical pumping of nuclear spins at zero magnetic field in strain free GaAs quantum dots. The strong interaction of a single, optically injected electron spin with the nuclear spins acts as a stabilizing, effective magnetic field (Knight field) on the nuclei. We optically tune the Knight field amplitude and direction. In combination with a small transverse magnetic field, we are able to control the longitudinal and transverse component of the nuclear spin polarization in the absence of lattice strain i.e. nuclear quadrupole effects, as reproduced by our model calculations.
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In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pumping of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear polarization (DNP) at zero magnetic field in a single quantum dot for the positively charged exciton X$^+$ state transition. We tune the DNP in both amplitude and sign by variation of an applied bias voltage V$_g$. Variation of $Delta$V$_g$ of the order of 100 mV changes the Overhauser splitting (nuclear spin polarization) from -30 $mu$eV (-22 %) to +10 $mu$eV (+7 %), although the X$^+$ photoluminescence polarization does not change sign over this voltage range. This indicates that absorption in the structure and energy relaxation towards the X$^+$ ground state might provide favourable scenarios for efficient electron-nuclear spin flip-flops, generating DNP during the first tens of ps of the X$^+$ lifetime which is of the order of hundreds of ps. Voltage control of DNP is further confirmed in Hanle experiments.
Repeated injection of spin polarized carriers in a quantum dot leads to the polarization of nuclear spins, a process known as dynamic nuclear spin polarization (DNP). Here, we report the first observation of p-shell carrier assisted DNP in single QDs at zero external magnetic field. The nuclear field - measured by using the Overhauser shift of the singly charged exciton state of the QDs - continues to increase, even after the carrier population in the s-shell saturates. This is also accompanied by an abrupt increase in nuclear spin buildup time as p-shell emission overtakes that of the s-shell. We attribute the observation to p-shell electrons strongly altering the nuclear spin dynamics in the QD, supported by numerical simulation results based on a rate equation model of coupling between electron and nuclear spin system. DNP with p-shell carriers could open up avenues for further control to increase the degree of nuclear spin polarization in QDs.
We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time.
We present a tight-binding theory of triangular graphene quantum dots (TGQD) with zigzag edge and broken sublattice symmetry in external magnetic field. The lateral size quantization opens an energy gap and broken sublattice symmetry results in a shell of degenerate states at the Fermi level. We derive a semi-analytical form for zero-energy states in a magnetic field and show that the shell remains degenerate in a magnetic field, in analogy to the 0th Landau level of bulk graphene. The magnetic field closes the energy gap and leads to the crossing of valence and conduction states with the zero-energy states, modulating the degeneracy of the shell. The closing of the gap with increasing magnetic field is present in all graphene quantum dot structures investigated irrespective of shape and edge termination.
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $mu$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field.
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