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Register a new userNiobium-based sputtered thin films for Corrosion Protection of proton-irradiated liquid water targets for [18F] production
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Chemically inert Coatings on Havar entrance foils of the targets for [18F] production via proton irradiation of enriched water at pressurized conditions are needed to decrease the amount of ionic contaminants released from Havar. In order to find the most effective protective coatings, the Nb-based coating microstructure and barrier properties have been correlated with deposition parameters as: substrate temperature, applied bias, deposition rate and sputtering gas pressure. Aluminated quartz used as a substrate allowed us to verify the protection efficiency of the desirable coatings as diffusion barriers. Two modeling corrosion tests based on the extreme susceptibility of aluminum to liquid gallium and acid corrosion were applied. Pure Niobium coatings have been found less effective barriers than Niobium-titanium coatings. But Niobium oxide films, according to the corrosion tests performed, showed superior barrier properties. Therefore Multi-layered Niobium-Niobium oxide films have been suggested, since they combine the high thermal conductivity of Niobium with the good barrier properties of Niobium oxide.
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We studied the structural and magnetic properties of FeC~thin films deposited by co-sputtering of Fe and C targets in a direct current magnetron sputtering (dcMS) process at a substrate temperature (Ts) of 300, 523 and 773,K. The structure and morphology was measured using x-ray diffraction (XRD), x-ray absorption near edge spectroscopy (XANES) at Fe $L$ and C $K$-edges and atomic/magnetic force microscopy (AFM, MFM), respectively. An ultrathin (3,nm) $^{57}$FeC~layer, placed between relatively thick FeC~layers was used to estimate Fe self-diffusion taking place during growth at different Ts~using depth profiling measurements. Such $^{57}$FeC~layer was also used for $^{57}$Fe conversion electron M{o}ssbauer spectroscopy (CEMS) and nuclear resonance scattering (NRS) measurements, yielding the magnetic structure of this ultrathin layer. We found from XRD measurements that the structure formed at low Ts~(300,K) is analogous to Fe-based amorphous alloy and at high Ts~(773,K), pre-dominantly a tifc~phase has been formed. Interestingly, at an intermediate Ts~(523,K), a clear presence of tefc~(along with tifc~and Fe) can be seen from the NRS spectra. The microstructure obtained from AFM images was found to be in agreement with XRD results. MFM images also agrees well with NRS results as the presence of multi-magnetic components can be clearly seen in the sample grown at Ts~= 523,K. The information about the hybridization between Fe and C, obtained from Fe $L$ and C $K$-edges XANES also supports the results obtained from other measurements. In essence, from this work, experimental realization of tefc~has been demonstrated. It can be anticipated that by further fine-tuning the deposition conditions, even single phase tefc~phase can be realized which hitherto remains an experimental challenge.
Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with sputtered materials at low temperature (<= 250 C) could play a role in flexible electronics or back-end-of-line (BEOL) silicon-compatible processes. Here, we explore lateral transport in chalcogenide films (Sb2Te3, Ge2Sb2Te5, Ge4Sb6Te7) and multilayers, with Hall measurements (in <= 50 nm thin films) and with p-type transistors (in <= 5 nm ultrathin films). The highest Hall mobilities are measured for Sb2Te3/GeTe superlattices (~18 cm2/V/s at room temperature), over 2-3x higher than the other films. In ultrathin p-type FETs with Ge2Sb2Te5, we achieve field-effect mobility up to ~5.5 cm2/V/s with current on/off ratio ~10000, the highest for Ge2Sb2Te5 transistors to date. We also explore process optimizations (e.g., AlOx capping layer, type of developer for lithography) and uncover their trade-offs towards the realization of p-type transistors with acceptable mobility and on/off current ratio. Our study provides essential insights into the optimization of electronic devices based on p-type chalcogenides.
We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150 nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6times10^{12}$ to $1.6times10^{15}$ ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray diffraction, magneto-optic Kerr effect and magnetic force microscope. Preliminary results are presented. From the study of the lattice spacing, we measure a change on the film structure that depends on the received dose, similarly to previous studies with other materials. Investigations on the surface show a strong modification of its magnetic properties.
Copper ferrite thin films were rf sputtered at a power of 50W. The as deposited films were annealed in air at 800{deg}C and slow cooled. The transmission electron microscope (TEM) studies were carried out on as deposited as well as on slow cooled film. Significantly larger defect concentration, including stacking faults, was observed in 50W as deposited films than the films deposited at a higher rf power of 200W. The film annealed at 800{deg}C and then slow cooled showed an unusual grain growth upto 180nm for a film thickness of ~240nm. These grains showed Kikuchi pattern.
We demonstrate that the superconducting critical temperature (Tc) of thin niobium films can be electrically modulated in a liquid-gated geometry device. Tc can be suppressed and enhanced by applying positive and negative gate voltage, respectively, in a reversible manner within a range of about 0.1 K. At a fixed temperature below Tc, we observed that the superconducting critical current can be modulated by gate voltage. This result suggests a possibility of an electrically-controlled switching device operating at or above liquid helium temperature, where superconductivity can be turned on or off solely by the applied gate voltage.
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