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Register a new userLateral Transport and Field-Effect Characteristics of Sputtered P-Type Chalcogenide Thin Films
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Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with sputtered materials at low temperature (<= 250 C) could play a role in flexible electronics or back-end-of-line (BEOL) silicon-compatible processes. Here, we explore lateral transport in chalcogenide films (Sb2Te3, Ge2Sb2Te5, Ge4Sb6Te7) and multilayers, with Hall measurements (in <= 50 nm thin films) and with p-type transistors (in <= 5 nm ultrathin films). The highest Hall mobilities are measured for Sb2Te3/GeTe superlattices (~18 cm2/V/s at room temperature), over 2-3x higher than the other films. In ultrathin p-type FETs with Ge2Sb2Te5, we achieve field-effect mobility up to ~5.5 cm2/V/s with current on/off ratio ~10000, the highest for Ge2Sb2Te5 transistors to date. We also explore process optimizations (e.g., AlOx capping layer, type of developer for lithography) and uncover their trade-offs towards the realization of p-type transistors with acceptable mobility and on/off current ratio. Our study provides essential insights into the optimization of electronic devices based on p-type chalcogenides.
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Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological insulator. Its extreme air sensitivity has limited experimental efforts on thin- and ultra-thin films grown via molecular beam epitaxy to ultra-high vacuum environments. Here we demonstrate air-stable Na3Bi thin films passivated with magnesium difluoride (MgF2) or silicon (Si) capping layers. Electrical measurements show that deposition of MgF2 or Si has minimal impact on the transport properties of Na3Bi whilst in ultra-high vacuum. Importantly, the MgF2-passivated Na3Bi films are air-stable and remain metallic for over 100 hours after exposure to air, as compared to near instantaneous degradation when they are unpassivated. Air stability enables transfer of films to a conventional high-magnetic field cryostat, enabling quantum transport measurements which verify that the Dirac semimetal character of Na3Bi films is retained after air exposure.
Chalcogenide perovskites have emerged as a new class of electronic materials, but fundamental properties and applications of chalcogenide perovskites remain limited by the lack of high quality epitaxial thin films. We report epitaxial thin film growth of BaZrS3, a prototypical chalcogenide, by pulsed laser deposition. X-ray diffraction studies show that the films are strongly textured out of plane and have a clear in-plane epitaxial relationship with the substrate. Electron microscopy studies confirm the presence of epitaxy for the first few layers of the film at the interface, even though away from the interface the films are polycrystalline with a large number of extended defects suggesting the potential for further improvement in growth. X-Ray reflectivity and atomic force microscopy show smooth film surfaces and interfaces between the substrate and the film. The films show strong light absorption near the band edge and photoluminescence in the visible region. The photodetector devices show fast and efficient photo response with the highest ON/OFF ratio reported for BaZrS3 films thus far. Our study opens up opportunities to realize epitaxial thin films, heterostructures, and superlattices of chalcogenide perovskites to probe fundamental physical phenomena and the resultant electronic and photonic device technologies.
We studied the structural and magnetic properties of FeC~thin films deposited by co-sputtering of Fe and C targets in a direct current magnetron sputtering (dcMS) process at a substrate temperature (Ts) of 300, 523 and 773,K. The structure and morphology was measured using x-ray diffraction (XRD), x-ray absorption near edge spectroscopy (XANES) at Fe $L$ and C $K$-edges and atomic/magnetic force microscopy (AFM, MFM), respectively. An ultrathin (3,nm) $^{57}$FeC~layer, placed between relatively thick FeC~layers was used to estimate Fe self-diffusion taking place during growth at different Ts~using depth profiling measurements. Such $^{57}$FeC~layer was also used for $^{57}$Fe conversion electron M{o}ssbauer spectroscopy (CEMS) and nuclear resonance scattering (NRS) measurements, yielding the magnetic structure of this ultrathin layer. We found from XRD measurements that the structure formed at low Ts~(300,K) is analogous to Fe-based amorphous alloy and at high Ts~(773,K), pre-dominantly a tifc~phase has been formed. Interestingly, at an intermediate Ts~(523,K), a clear presence of tefc~(along with tifc~and Fe) can be seen from the NRS spectra. The microstructure obtained from AFM images was found to be in agreement with XRD results. MFM images also agrees well with NRS results as the presence of multi-magnetic components can be clearly seen in the sample grown at Ts~= 523,K. The information about the hybridization between Fe and C, obtained from Fe $L$ and C $K$-edges XANES also supports the results obtained from other measurements. In essence, from this work, experimental realization of tefc~has been demonstrated. It can be anticipated that by further fine-tuning the deposition conditions, even single phase tefc~phase can be realized which hitherto remains an experimental challenge.
We report current-induced spin torques in epitaxial NiMnSb films on a commercially available epi-ready GaAs substrate. The NiMnSb was grown by co-sputtering from three targets using optimised parameter. The films were processed into micro-scale bars to perform current-induced spin-torque measurements. Magnetic dynamics were excited by microwave currents and electric voltages along the bars were measured to analyse the symmetry of the current-induced torques. We found that the extracted symmetry of the spin torques matches those expected from spin-orbit interaction in a tetragonally distorted half-Heusler crystal. Both field-like and damping-like torques are observed in all the samples characterised, and the efficiency of the current-induced torques is comparable to that of ferromagnetic metal/heavy metal bilayers.
An approach to adjusting the conduction band population for tuning the magnetic and magnetocaloric response of EuO1-{delta} thin films through control of oxygen vacancies ({delta} = 0, 0.025, and 0.09) is presented. The films each showed a paramagnetic to ferromagnetic transition around 65 K, with an additional magnetic ordering transition at higher temperatures in the oxygen deficient samples. All transitions are observed to be of second order. A maximum magnetic entropy change of 6.4 J/kg K over a field change of 2 T with a refrigerant capacity of 223 J/kg was found in the sample with {delta} = 0, and in all cases the refrigerant capacities of the thin films under study were found to exceed that reported for bulk EuO. Adjusting the oxygen content was shown to produce table-like magnetocaloric effects, desirable for ideal Ericsson-cycle magnetic refrigeration. These films are thus excellent candidates for small-scale magnetic cooling technology in the liquid nitrogen temperature range.
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