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Unit Cell-Level Thickness Control of Single-Crystalline Zinc Oxide Nanosheets Enabled by Electrical Double Layer Confinement

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 Added by Yeqi Shi
 Publication date 2017
  fields Physics
and research's language is English




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Ionic layer epitaxy (ILE) has recently been developed as an effective strategy to synthesize nanometer-thick 2D materials with a non-layered crystal structure, such as ZnO. The packing density of the amphiphilic monolayer is believed to be a key parameter that controls the nanosheet nucleation and growth. In this work, we systematically investigated the growth behavior of single-crystalline ZnO nanosheets templated at the water-air interface by an anionic oleylsulfate monolayer with different packing densities. The thicknesses of ZnO nanosheets were tuned from one unit cell to four unit cells, and exhibited good correlation with the width of Zn2+ ion concentration zone (the Stern layer) underneath the ionized surfactant monolayer. Further analysis of the nanosheet sizes and density revealed that the nanosheet growth was dominated by the steric hindrance from the surfactant monolayer at lower surface pressure; while the nucleation density became the dominating factor at higher surface pressure. The ZnO nanosheets exhibited a decreasing work function as the thickness reduced to a few unit cells. This research validated a critical hypothesis that the nanosheet growth is self-limited by the formation of a double layer of ionic precursors. This work will open up a new way towards controlled synthesis of novel 2D nanosheets from non-layered materials with a thickness down to one unit cell.



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The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in which free carrier concentration is very low. For optimized ALD process it can reach the level of 10^15 cm-3, while mobility of electrons is between 20 and 50 cm2/Vs. Electrical parameters of ZnO films deposited by ALD at low temperature regime are appropriate for constructing of the ZnO-based p-n and Schottky junctions. We demonstrate that such junctions are characterized by the rectification ratio high enough to fulfill requirements of 3D memories and are deposited at temperature 100degC which makes them appropriate for deposition on organic substrates.
131 - D. Reisinger , B. Blass , J. Klein 2002
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Considering that two-dimensional (2D) molybdenum trioxide has acquired more attention in the last few years, it is relevant to speed up thickness identification of this material. We provide two fast and non-destructive methods to evaluate the thickness of MoO3 flakes on SiO2/Si substrates. First, by means of quantitative analysis of the apparent color of the flakes in optical microscopy images, one can make a first approximation of the thickness with an uncertainty of +-3 nm. The second method is based on the fit of optical contrast spectra, acquired with micro-reflectance measurements, to a Fresnel law-based model that provides an accurate measurement of the flake thickness with +-2 nm of uncertainty.
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