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Register a new userPhase diagrams of voltage-gated oxide interfaces with strong Rashba coupling
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We propose a model for the two-dimensional electron gas formed at the interface of oxide heterostructures that includes a Rashba spin-orbit coupling proportional to an electric field oriented perpendicularly to the interface. Taking into account the electron density dependence of this electric field confining the electron gas at the interface, we report the occurrence of a phase separation instability (signaled by a negative compressibility) for realistic values of the spin-orbit coupling and of the electronic band-structure parameters at zero temperature. We extend the analysis to finite temperatures and in the presence of an in-plane magnetic field, thereby obtaining two phase diagrams which exhibit a phase separation dome. By varying the gating potential the phase separation dome may shrink and vanish at zero temperature into a quantum critical point where the charge fluctuates dynamically. Similarly the phase separation may be spoiled by a planar magnetic field even at zero temperature leading to a line of quantum critical points.
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There is steadily increasing evidence that the two-dimensional electron gas (2DEG) formed at the interface of some insulating oxides like LaAlO3/SrTiO3 and LaTiO3/SrTiO3 is strongly inhomogeneous. The inhomogeneous distribution of electron density is accompanied by an inhomogeneous distribution of the (self-consistent) electric field confining the electrons at the interface. In turn this inhomogeneous transverse electric field induces an inhomogeneous Rashba spin-orbit coupling (RSOC). After an introductory summary on two mechanisms possibly giving rise to an electronic phase separation accounting for the above inhomogeneity,we introduce a phenomenological model to describe the density-dependent RSOC and its consequences. Besides being itself a possible source of inhomogeneity or charge-density waves, the density-dependent RSOC gives rise to interesting physical effects like the occurrence of inhomogeneous spin-current distributions and inhomogeneous quantum-Hall states with chiral edge states taking place in the bulk of the 2DEG. The inhomogeneous RSOC can also be exploited for spintronic devices since it can be used to produce a disorder-robust spin Hall effect.
LaAlO3/SrTiO3 ad LaTiO3/SrTiO3 interfaces are known to host a strongly inhomogeneous (nearly) two-dimensional electron gas (2DEG). In this work we present three unconventional electronic mechanisms of electronic phase separation (EPS) in a 2DEG as a possible source of inhomogeneity in oxide interfaces. Common to all three mechanisms is the dependence of some (interaction) potential on the 2DEGs density. We first consider a mechanism resulting from a sizable density-dependent Rashba spin-orbit coupling. Next, we point out that an EPS may also occur in the case of a density-dependent superconducting pairing interaction. Finally, we show that the confinement of the 2DEG to the interface by a density-dependent, self-consistent electrostatic potential can by itself cause an EPS.
Oxide heterostructures are of great interest both for fundamental and applicative reasons. In particular the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ or LaTiO$_3$/SrTiO$_3$ interfaces displays many different physical properties and functionalities. However there are clear indications that the interface electronic state is strongly inhomogeneous and therefore it is crucially relevant to investigate possible intrinsic electronic mechanisms underlying this inhomogeneity. Here the electrostatic potential confining the electron gas at the interface is calculated self-consistently, finding that the electron confinement at the interface may induce phase separation, to avoid a thermodynamically unstable state with a negative compressibility. This provides a generic robust and intrinsic mechanism for the experimentally observed inhomogeneous character of these interfaces.
Diluted oxide interface of LaAl1-xMnxO/SrTiO3 (LAMO/STO) provides a new way of tuning the ground states of the interface between the two band insulators of LAO and STO from metallic/superconducting to highly insulating. Increasing the Mn doping level (x) leads to a delicate control of the carrier density as well as a raise in the electron mobility and spin polarization. Herein, we demonstrate a tunable Rashba spin-orbit coupling (SOC) and spin polarization of LAMO/STO (0.2 <= x <= 0.3) by applying a back gate. The presence of SOC causes the splitting of energy band into two branches by a spin splitting energy. The maximum spin splitting energy depends on the Mn doping and decreases with the increasing Mn content and then vanishes at x = 0.3. The carrier density dependence of the spin splitting energy for different compositions shows a dome-shaped behavior with a maximum at different normalized carrier density. These findings have not yet been observed in LAO/STO interfaces. A fully back-gate-tunable spin-polarized 2DEL is observed at the interface with x = 0.3 where only dxy orbits are populated (5.3E12 cm-2 <= ns <= 1.0E13 cm-2). The present results shed light on unexplored territory in SOC at STO-base oxide heterostructures and make LAMO/STO an intriguing platform for spin-related phenomena in 3d-electron systems.
The electric-field tunable Rashba spin-orbit coupling at the LaAlO3/SrTiO3 interface shows potential applications in spintronic devices. However, different gate dependence of the coupling strength has been reported in experiments. On the theoretical side, it has been predicted that the largest Rashba effect appears at the crossing point of the $d_{xy}$ and $d_{xz,yz}$ bands. In this work, we study the tuneability of the Rashba effect in LaAlO3/SrTiO3 by means of back-gating. The Lifshitz transition was crossed multiple times by tuning the gate voltage so that the Fermi energy is tuned to approach or depart from the band crossing. By analyzing the weak antilocalization behavior in the magnetoresistance, we find that the maximum spin-orbit coupling effect occurs when the Fermi energy is near the Lifshitz point. Moreover, we find strong evidence for a single spin winding at the Fermi surface.
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